Формирование наностержней GaN в монодисперсных сферических мезопористых частицах кремнезема
Keyword(s):
Gallium nitride nanorods with a 15- 40 nm diameter and a 50-150 nm length have been synthesized in monodisperse spherical mesoporous silica particles (MSMSP) by high-temperature annealing the Ga2O3 precursor in ammonia. The template material (a-SiO2) was selectively removed by etching the composite MSMSP/GaN particles in HF. The individual GaN nanorods were thus obtained. It is shown, that the size of GaN nanorods was much higher than the pore size of MSMSP (diameter ~3 nm, length ~10 nm). The possible mechanism of formation of GaN nanorods was proposed. Redistribution of material inside the composite particles MSMSP/GaN possibly occurred by surface diffusion of gaseous molecules in mesopores and by diffusion of Ga and N atoms in a-SiO2.
2006 ◽
Vol 253
(1-2)
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pp. 269-273
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Keyword(s):
Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing
1989 ◽
Vol 47
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pp. 604-605
2003 ◽
Vol 386
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pp. 358-362
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1970 ◽
Vol 32
(6)
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pp. 1791-1797
2020 ◽
Vol 217
(14)
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pp. 1900868
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