Superfocusing and zero-degree focusing in planar channeling of protons in a thin silicon crystal

2019 ◽  
Vol 444 ◽  
pp. 10-22 ◽  
Author(s):  
M. Ćosić ◽  
N. Nešković ◽  
S. Petrović
Keyword(s):  
Silicon Crystal ◽  
Planar Channeling ◽  
Zero Degree ◽  
Thin Silicon

Observation of similarity of angular distributions of electrons at planar channeling in silicon crystal

1987 ◽  
Vol 140 (1) ◽  
pp. K13-K17
Author(s):  
V. I. Gridnev ◽  
V. G. Khlabutin ◽  
E. I. Rozum ◽  
S. A. Vorobiev
Keyword(s):  
Silicon Crystal ◽  
Angular Distributions ◽  
Planar Channeling

Monochromatization of Collimated Coherent Bremsstrahlung from a Thin Silicon Crystal

1971 ◽  
Vol 30 (3) ◽  
pp. 806-810 ◽  
Author(s):  
Tetsuji Nishikawa ◽  
Shiro Suzuki ◽  
Tsuneaki Tsuru ◽  
Kuninori Endo ◽  
Takeshi Katayama ◽  
...  
Keyword(s):  
Silicon Crystal ◽  
Coherent Bremsstrahlung ◽  
Thin Silicon

Electron emission induced by fast heavy ions in a thin silicon crystal

2004 ◽  
Vol 70 (3) ◽  
Author(s):  
F. Barrué ◽  
M. Chevallier ◽  
D. Dauvergne ◽  
R. Kirsch ◽  
J.-C. Poizat ◽  
...  
Keyword(s):  
Electron Emission ◽  
Heavy Ions ◽  
Silicon Crystal ◽  
Thin Silicon

scholarly journals Deflection of 450 GeV protons by planar channeling in a bent silicon crystal

1992 ◽  
Vol 71 (2) ◽  
pp. 155-160 ◽  
Author(s):  
B.N. Jensen ◽  
S.P. Møller ◽  
E. Uggerhøj ◽  
T. Worm ◽  
H.W. Atherton ◽  
...  
Keyword(s):  
Silicon Crystal ◽  
Planar Channeling

scholarly journals Further tests on liquid‐nitrogen‐cooled, thin silicon‐crystal monochromators using a focused wiggler synchrotron beam

1996 ◽  
Vol 67 (9) ◽  
pp. 3350-3350 ◽  
Author(s):  
C. S. Rogers ◽  
D. M. Mills ◽  
P. B. Fernandez ◽  
G. S. Knapp ◽  
M. Wulff ◽  
...  
Keyword(s):  
Liquid Nitrogen ◽  
Silicon Crystal ◽  
Synchrotron Beam ◽  
Thin Silicon

scholarly journals Experimental results with cryogenically cooled thin silicon crystal x-ray monochromators on high heat flux beamlines

1996 ◽  
Author(s):  
Carey S. Rogers ◽  
Dennis M. Mills ◽  
Wah Keat Lee ◽  
Patricia B. Fernandez ◽  
Timothy Graber
Keyword(s):  
Heat Flux ◽  
Silicon Crystal ◽  
High Heat ◽  
Experimental Results ◽  
High Heat Flux ◽  
X Ray ◽  
Thin Silicon

scholarly journals Angular asymmetry of the nuclear interaction probability of high energy particles in short bent crystals

2020 ◽  
Vol 80 (1) ◽  
Author(s):  
W. Scandale ◽  
F. Cerutti ◽  
L. S. Esposito ◽  
M. Garattini ◽  
S. Gilardoni ◽  
...  
Keyword(s):  
Silicon Crystal ◽  
Nuclear Interaction ◽  
High Energy ◽  
Planar Channeling ◽  
The North ◽  
Volume Reflection ◽  
Bent Crystals ◽  
First Time ◽  
High Energy Particles ◽  
Hadron Beam

AbstractThe rate of inelastic nuclear interactions in a short bent silicon crystal was precisely measured for the first time using a 180 GeV/c positive hadron beam produced in the North Experimental Area of the CERN SPS. An angular asymmetry dependence on the crystal orientation in the vicinity of the planar channeling minimum has been observed. For the inspected crystal, this probability is about $$\sim 20\%$$∼20% larger than in the amorphous case because of the atomic density increase along the particle trajectories in the angular range of volume reflection, whose dimension is determined by the crystal bending angle. Instead, for the opposite angular orientation with respect to the planar channeling, there is a smaller probability excess of $$\sim 4\%$$∼4%.

scholarly journals On the ionization loss spectra of high-energy channeled negatively charged particles

2020 ◽  
Vol 80 (7) ◽  
Author(s):  
S. V. Trofymenko ◽  
I. V. Kyryllin
Keyword(s):  
Numerical Simulation ◽  
Experimental Determination ◽  
Silicon Crystal ◽  
Charged Particles ◽  
High Energy ◽  
Crystal Thickness ◽  
Planar Channeling ◽  
Characteristic Parameters ◽  
Ionization Loss

Abstract The ionization loss spectra of high-energy negatively charged particles which move in the planar channeling mode in a silicon crystal are studied with the use of numerical simulation. The case when the crystal thickness is on the order of the dechanneling length $$l_d$$ld is considered. It is shown that in this case the shape of the spectrum noticeably depends on $$l_d$$ld. The evolution of various characteristic parameters of the spectrum with the change of $$l_d$$ld is investigated. A method of the experimental determination of $$l_d$$ld on the basis of the measurement of the ionization loss spectrum is proposed.

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