scholarly journals Diffusion, Precipitation, and Cavity-Wall Reactions of Ion-Implanted Gold in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
S.M. Myers ◽  
G.A. Petersen
Keyword(s):  
Ion Implantation ◽  
Solubility Product ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Cavity Wall ◽  
Temperature Range ◽  
Order Of Magnitude ◽  
Diffusion Precipitation ◽  
Ion Implanted

AbstractThe diffusion of Au in Si and its binding to cavities and to precipitates of the equilibrium Au-Si phase were investigated in the temperature range 1023-1123 K using ion implantation and Rutherford backscattering spectrometry. The diffusivity-solubility product for interstitial Au was found to be about an order of magnitude greater than the extrapolation of previous, indirect determinations at higher temperatures. Chemisorption on cavity walls was shown to be more stable than Au-Si precipitation by 0.1-0.3 eV in the investigated temperature range, indicating that cavities are effective gettering centers for Au impurities.

Pzt Interaction with Metal and Oxides Studied by Rutherford Backscattering Spectrometry

1991 ◽  
Vol 243 ◽  
Author(s):  
Peter Revesz ◽  
Jian Li ◽  
Nicholas Szabo ◽  
James W. Mayer ◽  
David Caudillo ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Internal Oxidation ◽  
Rutherford Backscattering Spectrometry ◽  
Metal Electrode ◽  
Rutherford Backscattering ◽  
Annealing Behavior ◽  
Temperature Range ◽  
Pzt Film ◽  
Increasing Temperature

AbstractAnnealing behavior in oxygen ambients of the of the ferroelectric PZT on Hf and Zr electrodes has been studied in the temperature range of 500-800°C using the 3.045MeV O16(∝,∝)O16 resonance in backscattering spectrometry. Internal oxidation of the buried metal electrode was observed. Oxygen concentration of the PZT film decreases with increasing temperature. Pb loss of the PZT film occurred above 700°C.

Ti diffusion in feldspar

2020 ◽  
Vol 105 (7) ◽  
pp. 1040-1051
Author(s):  
D. J. Cherniak ◽  
E. B. Watson
Keyword(s):  
Trace Elements ◽  
Silica Glass ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Diffusion ◽  
Calcic Plagioclase ◽  
Crustal Rocks ◽  
Temperature Range ◽  
Chemical Signatures ◽  
Order Of Magnitude ◽  
Diffusion Profiles

Abstract Chemical diffusion of Ti has been measured in natural K-feldspar and plagioclase. The sources of diffusant used were TiO2 powders or pre-annealed mixtures of TiO2 and Al2O3. Experiments were run in crimped Pt capsules in air or in sealed silica glass capsules with solid buffers (to buffer at NNO). Rutherford backscattering spectrometry (RBS) was used to measure Ti diffusion profiles. From these measurements, the following Arrhenius relations are obtained for diffusion normal to (001):For oligoclase, over the temperature range 750–1050 °C:DOlig=6.67×10-12exp(-207±31kJ/mol/RT)m2s-1For labradorite, over the temperature range 900–1150 °C:DLab=of4.37×10-14exp(-181±57kJ/mol/RT)m2s-1For K-feldspar, over the temperature range 800–1000 °C:DKsp=3.01×10-6exp(-342±47kJ/mol/RT)m2s-1. Diffusivities for experiments buffered at NNO are similar to those run in air, and the presence of hydrous species appears to have little effect on Ti diffusion. Ti diffusion also shows little evidence of anisotropy. In plagioclase, there appears to be a dependence of Ti diffusion on An content of the feldspar, with Ti diffusing more slowly in more calcic plagioclase. This trend is similar to that observed for other cations in plagioclase, including Sr, Pb, Ba, REE, Si, and Mg. In the case of Ti, an increase of 30% in An content would result in an approximate decrease in diffusivity of an order of magnitude. These data indicate that feldspar should be moderately retentive of Ti chemical signatures, depending on feldspar composition. Ti will be more resistant to diffusional alteration than Sr. For example, Ti zoning on a 50 μm scale in oligoclase would be preserved at 600 °C for durations of ~1 million years, with Sr zoning preserved only for ~70 000 yr at this temperature. These new data for a trace impurity that is relatively slow-diffusing and ubiquitous in feldspars (Hoff and Watson 2018) have the potential to extend the scope and applicability of t-T models for crustal rocks based on measurements of trace elements in feldspars.

scholarly journals Photoluminescence Spectroscopy and Rutherford Backscattering Channeling Evaluation of Various Capping Techniques for Rapid Thermal Annealing of Ion-Implanted ZnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
E.L. Allen ◽  
F.X. Zach ◽  
K.M. Yu ◽  
E.D. Bourret
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Rutherford Backscattering ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Ion Implanted

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

Radiation Enhanced Diffusion in Ion-Implanted Glasses and Glass/Metal Couples

1983 ◽  
Vol 27 ◽  
Author(s):  
G. W. Arnold
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Diffusion Mechanism ◽  
Glass Network ◽  
Heavy Ion ◽  
Rutherford Backscattering ◽  
Enhanced Diffusion ◽  
Mixed Alkali ◽  
Radiation Enhanced Diffusion ◽  
Glass Metal ◽  
Ion Implanted

ABSTRACTIon implantation causes alkali migration to the surface in alkali silicate glasses. Rutherford backscattering spectrometry was used to follow this depletion. Room temperature implantations of 5×1016 250 keV Xe/cm2 in 12M20·88SiO2 (M = Li,Na,K,Rb,Cs) removes approximately equal numbers (within a factor of 2) of alkali from the glass. Low temperature (77K) implants significantly reduce the alkali loss. These results imply a radiationenhanced diffusion mechanism in which the alkali interchanges with the products of the collision cascade, with the kinetics being limited by the radiation damage components. The results for mixed-alkali glasses ((12−x)M2O·xCs20·88Si02) give further evidence for this process. In glass/'metal couples, radiation enhanced diffusion allows the interchange of glass network components with deposited metals. Rutherford backscattering spectrometry was used to follow the interchange of silicate and phosphate glass components with metal ions near the heavy-ion implanted interface between glass substrate and metal (Al,Zr) films.

scholarly journals Formation of a Buried Soft Layer in Sic for ”Compliant Substrate” by Ion Implantation

1996 ◽  
Vol 438 ◽  
Author(s):  
M. Lioubtchenko ◽  
J. Hunn ◽  
A. Suvkhanov ◽  
N. Parikh ◽  
D. Bray
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Rutherford Backscattering ◽  
Soft Layer ◽  
Compliant Substrate ◽  
Graphitic Layer ◽  
Appreciable Increase ◽  
Significant Damage ◽  
New Phase ◽  
Ion Implanted

AbstractRadiation damage and its removal have been studied in ion implanted 6H-SiC by Rutherford backscattering/Channeling (RBS). We have implanted Ga and Ti at 800°C using doses of 1 × 1016 to 2× 1017 cm−2. The implanted samples have been subsequently annealed at 1050°C, and then at 1400°C for 30 sec to study the removal of damage produced during implantation. The energies of implanted species have been chosen to obtain 20 – 40 nmn projected ranges to form a buried metallic or graphitic layer. No significant damage removal has been observed after 1050°C anneal, however 1400°C annealing of 40 and 120 keV Ga implanted samples (fluence 2 × 1016 cm−2) resulted in significantly less damage as can be observed from RBS/Channeling data. In the case of Ti implanted samples annealing led to an appreciable increase in the channeled backscattering yield, which might be due to the formation of some new phase (e.g. TiSi or TiSi2 ) and may be related to distortions of the existing lattice.

Manganese in 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 701-704
Author(s):  
Margareta K. Linnarsson ◽  
Aurégane Audren ◽  
Anders Hallén
Keyword(s):  
Mass Spectrometry ◽  
Heat Treatment ◽  
Ion Implantation ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
P Type ◽  
Secondary Ion

Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry and Rutherford backscattering spectrometry in the channeling direction is employed for characterization of crystal disorder. After the heat treatment, the crystal order is improved and a substantial rearrangement of manganese is revealed in the implanted region. However, no pronounced manganese diffusion deeper into the sample is recorded.

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