Europium(III)-doped A2Hf2O7 (A = Y, Gd, Lu) nanoparticles: Influence of annealing temperature, europium(III) concentration and host cation on the luminescent properties

2016 ◽  
Vol 61 ◽  
pp. 68-76 ◽  
Author(s):  
Jelena Papan ◽  
Dragana J. Jovanović ◽  
Katarina Vuković ◽  
Krisjanis Smits ◽  
Vesna Đorđević ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Luminescent Properties ◽  
Host Cation

Influence of annealing temperature on luminescent properties of Eu3+/V5+ co-doped nanocrystalline Gd2Ti2O7 powders

2009 ◽  
Vol 27 (6) ◽  
pp. 900-904 ◽  
Author(s):  
Ying ZHANG ◽  
Linghong DING ◽  
Xinling PANG ◽  
Weifeng ZHANG
Keyword(s):  
Annealing Temperature ◽  
Luminescent Properties ◽  
Co Doped

Effect of Structure Change on Luminescent Properties of CsPbBr2I Perovskite Nanocrystals after Heat Treatment

2019 ◽  
Vol 72 (9) ◽  
pp. 663
Author(s):  
Ji Li ◽  
Li Wang ◽  
Xin Gao
Keyword(s):  
Quantum Confinement ◽  
Annealing Temperature ◽  
Luminescent Properties ◽  
Blue Shift ◽  
Exchange Reactions ◽  
Perovskite Nanocrystals ◽  
Average Grain Size ◽  
Halide Perovskites ◽  
Popular Subject ◽  
Lead Halide

Lead halide perovskite nanocrystals (NCs) are still a popular subject in the field of luminescence because of their high photoluminescence quantum yield (PLQY) and colour tenability through anion exchange reactions or quantum confinement. We investigated the structure and luminescence properties of the mixed halide perovskites CsPbBr2I NCs with annealing temperatures. The results showed that the average grain size of CsPbBr2I increased with increasing the temperature from 300 to 440K, and the morphology changed above 380K. The normalised PL spectra of CsPbBr2I NCs had an obvious blue-shift, and then displayed a slight red-shift with increasing annealing temperature. In addition, the PL intensities, peak energies, and bandwidths of the NC films as a function of temperature were discussed in detail.

Sol-Gel Derived Strong Green Phosphor Zn2SiO4: Mn2+ and the Luminescent Properties

2014 ◽  
Vol 692 ◽  
pp. 304-310
Author(s):  
Yi Wang ◽  
Cheng Bin Huang ◽  
Pai Bin Xie ◽  
Song Ju Li ◽  
Zhi Wei Chen ◽  
...  
Keyword(s):  
Emission Spectrum ◽  
Doping Concentration ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Green Emission ◽  
Luminescent Properties ◽  
Photoluminescence Properties ◽  
Green Phosphor ◽  
Strong Green Emission ◽  
Fluorescence Spectrometer

Being added by H3BO3 as flux, the nanosize strong green phosphor Zn2SiO4: Mn2+ was prepared by an improved sol-gel method. The structure and the morphology of the samples were examined by XRD, UV-VL spectrophotometer and SEM. The photoluminescence properties were measured by fluorescence spectrometer. Results show that, when the samples were annealed at 850°C for 2 hours, the intensity of emission spectrum of the sample is not strictly followed the monotonically increasing with the increase of Mn2+ doping concentration. It appears in a fluctuated tendency with the increase of doping concentration. In the 4% Mn2+ doping concentration and annealing temperature 950°C, the most strong green emission spectrum can be obtained. The mechanism of luminescence properties of this kind of material is analyzed.

Anneal-induced transformation of phase structure, morphology and luminescence of GdPO4:Sm3+ nanomaterials synthesized by a hydrothermal method

2017 ◽  
Vol 46 (9) ◽  
pp. 2948-2956 ◽  
Author(s):  
Xiao Zou ◽  
Lihua He ◽  
Dihao Tan ◽  
Fengying Lei ◽  
Na Jiang ◽  
...  
Keyword(s):  
Crystal Structures ◽  
Hydrothermal Method ◽  
Phase Structure ◽  
Annealing Temperature ◽  
Luminescent Properties ◽  
Facile Hydrothermal Method ◽  
Structure Morphology

GdPO4·H2O:xSm3+ nanomaterials were synthesized via a facile hydrothermal method and the effects of Sm3+ concentrations and annealing temperature on the crystal structures, morphologies, and luminescent properties were studied.

Influence of annealing temperature on microstructure and luminescent properties of Y2O3: Eu3+deposited quartz fibre

2016 ◽  
Vol 31 (1) ◽  
pp. 7-12 ◽  
Author(s):  
Z. M. Chen ◽  
S. X. Jiang ◽  
R. H. Guo ◽  
B. J. Xin ◽  
D. G. Miao
Keyword(s):  
Annealing Temperature ◽  
Luminescent Properties ◽  
Quartz Fibre

Synthesis and Luminescent Properties of Porous YVO4:Sm Nanoplates

2009 ◽  
Vol 620-622 ◽  
pp. 541-544 ◽  
Author(s):  
Ju An Wang ◽  
Yun Hua Xu ◽  
Qihong Cen ◽  
Xiao Man Zhang ◽  
Ya Ru Cui
Keyword(s):  
Low Temperature ◽  
Ethylene Glycol ◽  
Luminescence Intensity ◽  
Annealing Temperature ◽  
Luminescent Properties ◽  
Precipitation Method ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Preparation Methods ◽  
Co Precipitation

The present research describes a simple low-temperature synthesis route of fabricating porous YVO4:Sm nanoplates via a chemical co-precipitation method using commercially available Y2O3, NH4VO3, Sm2O3 and ethylene glycol as the reacting precursors. The as-synthesized YVO4:Sm was thermally treated at 300°C and 600°C for 2 h which is much lower than that of the conventional preparation methods. The obtained samples were characterized by FTIR, XRD, TEM and PL. The photoluminescence measurement revealed that the luminescence intensity was significantly increased with increasing annealing temperature.

Influence of The Annealing Temperature on The Morphologies and Luminescent Properties of GdBO3∶Eu3+/AAO Thin Films

2012 ◽  
Vol 33 (10) ◽  
pp. 1101-1106
Author(s):  
杨智 YANG Zhi ◽  
鲁芳 LU Fang ◽  
温亚林 WEN Ya-lin ◽  
李建业 LI Jian-ye ◽  
陶冶 TAO Ye
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Luminescent Properties

The Luminescent Properties of Ion-Implantation-Fabricated SiO2:nc-Si Nanostructures Annealed at High Temperatures

2003 ◽  
Vol 777 ◽  
Author(s):  
David I. Tetelbaum ◽  
Oleg N. Gorshkov ◽  
Alexandr P. Kasatkin ◽  
Vladimir A. Burdov ◽  
Sergey A. Trushin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ion Implantation ◽  
High Temperatures ◽  
Radiative Recombination ◽  
Annealing Temperature ◽  
Ostwald Ripening ◽  
Luminescent Properties ◽  
Implantation Dose ◽  
Postimplantation Annealing ◽  
Si Nanostructures

AbstractThe influence of the Si+ implantation dose and postimplantation annealing temperature on the photoluminescence (PL) intensity of silicon nanoinclusions in an SiO2 matrix was experimentally investigated. The way that the PL varied with dose and annealing temperature was explained on the basis of a model which takes into account the Ostwald ripening of nanocrystals and effect of the quantum dot size on the rate of radiative recombination.

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