Correlation between structural changes and luminescent properties of ZnMgS:Mn thin film phosphor with annealing temperature

2007 ◽  
Vol 126 (2) ◽  
pp. 711-716 ◽  
Author(s):  
Dong Chin Lee ◽  
Jong Hyuk Kang ◽  
Duk Young Jeon ◽  
Sun Jin Yun
Keyword(s):  
Thin Film ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Luminescent Properties

Structural Changes of UHV Deposited Titanium Thin Films in Presence of Oxygen Flow and Temperature

2011 ◽  
Vol 110-116 ◽  
pp. 1094-1098
Author(s):  
Haleh Kangarlou ◽  
Mehdi Bahrami Gharahasanloo ◽  
Akbar Abdi Saray ◽  
Reza Mohammadi Gharabagh
Keyword(s):  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Oxygen Flow ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Titanium Thin Films ◽  
Deposition Angle ◽  
Ti Films

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

FREE VOLUME RELATED STRUCTURAL CHANGES IN THE EPOXY POLYMER TGDDM

1994 ◽  
Vol 08 (13) ◽  
pp. 1699-1711 ◽  
Author(s):  
V. RAVINDRACHARY ◽  
R. RAMANI ◽  
C. RANGANATHAIAH ◽  
S. GOPAL
Keyword(s):  
Free Volume ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Epoxy Polymer ◽  
Slow Increase ◽  
Treatment Variation ◽  
Kinetic Relations ◽  
Long Lifetime ◽  
Average Size ◽  
Free Volume Hole

Positron lifetime measurements have been carried out in an amine-cured epoxy polymer TGDDM/DDS/BFE as a function of annealing temperature. The measured spectra are best fitted to three component analysis. From the measured long lifetime component the average size of the free volume holes has been calculated following Nakanishi et al.’s treatment. Variation of lifetime parameters with temperature indicates the preferential trapping of positronium atoms in the regions of increased free volume hole sizes. On the other hand, positrons are being trapped at micro-voids in the ordered regions. The slow increase of free volume upto 170°C may be due to the thermal expansion and we measure 170° C as the Tg for this epoxy. Lifetime data are also used to calculate the trapping rates in the ordered and disordered regions of the epoxy based on Goldanskii’s kinetic relations.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

scholarly journals Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 111
Author(s):  
Rihui Yao ◽  
Xiao Fu ◽  
Wanwan Li ◽  
Shangxiong Zhou ◽  
Honglong Ning ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Spin Coating ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Oxide Thin Film ◽  
Process Conditions ◽  
Hydroxyl Groups ◽  
Band Theory ◽  
Indium Oxide Thin Film

In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.

Sol–gel synthesis and optical properties of titanium dioxide thin film

2018 ◽  
Vol 32 (09) ◽  
pp. 1850076 ◽  
Author(s):  
Irfan Ullah ◽  
Shaukat Ali Khattak ◽  
Tanveer Ahmad ◽  
Saman ◽  
Nayab Ali Ludhi
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Optical Properties ◽  
Band Gap ◽  
Surface Defects ◽  
Sol Gel ◽  
Luminescent Properties ◽  
Localized States ◽  
Indirect Transition ◽  
Transmission And Absorption

The titanium dioxide (TiO2) is synthesized by sol–gel method using titanium-tetra-iso-propoxide (TTIP) as a starting material, and deposited on the pre-cleaned glass substrate using spin coating technique at optimized parameters. Energy dispersive X-ray (EDX) spectroscopy confirms successful TiO2 growth. The optical properties concerning the transmission and absorption spectra show 85% transparency and 3.28 eV wide optical band gap for indirect transition, calculated from absorbance. The exponential behavior of absorption edge is observed and attributed to the localized states electronic transitions, curtailed in the indirect band gap of the thin film. The film reveals decreasing refractive index with increasing wavelength. The photoluminescence (PL) study ascertains that luminescent properties are due to the surface defects.

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