Improved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric

2022 ◽  
pp. 106427
Author(s):  
Y.X. Ma ◽  
W.M. Tang ◽  
P.T. Lai
Keyword(s):  
Carrier Mobility ◽  
Nitrogen Doping ◽  
Oxide Growth ◽  
High K

Impact of TiN/HfO2 Integration on Carrier Mobility

2006 ◽  
Vol 917 ◽  
Author(s):  
Mikael Casse ◽  
Laurent Thevenod ◽  
Bernard Guillaumot ◽  
Lucie Tosti ◽  
Vincent Cosnier ◽  
...  
Keyword(s):  
Experimental Data ◽  
Carrier Mobility ◽  
Interface Layer ◽  
Interface Roughness ◽  
Coulomb Scattering ◽  
Metal Gate ◽  
Coulombic Interactions ◽  
High K ◽  
High K Dielectric ◽  
The Impact

AbstractWe have investigated the impact of a metal gate (TiN) and high-k dielectric (HfO2) on the carrier mobility. We have shown that strong remote Coulomb scattering (RCS) due to charges in the HfO2 layer (either grown by ALD or MOCVD) mostly degrades the mobility at low/medium field. High amount of charges (>1013cm-2) is needed to explain the 30% degradation observed in devices with a thin interface layer. These additional coulombic interactions are effective for bottom oxide up to 2nm. We have developed a RCS model to fully explain the experimental data. The influence of the metal gate is also evidenced. The latter has a significative impact on the Si/SiO2 interface roughness, and may induce some additional coulombic interactions.

Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer

2003 ◽  
Vol 94 (10) ◽  
pp. 6607-6610 ◽  
Author(s):  
D. Halley ◽  
G. Norga ◽  
A. Guiller ◽  
J. Fompeyrine ◽  
J. P. Locquet ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Silicon On Insulator ◽  
High K

High-k Oxide Growth on III-V Surfaces: Chemical Bonding and MOSFET Performance

2019 ◽  
Vol 35 (3) ◽  
pp. 403-413 ◽  
Author(s):  
Christopher Hinkle ◽  
Barry Brennan ◽  
Stephen McDonnell ◽  
Marko Milojevic ◽  
Arif Sonnet ◽  
...  
Keyword(s):  
Chemical Bonding ◽  
Oxide Growth ◽  
High K

ISSUES, ACHIEVEMENTS AND CHALLENGES TOWARDS INTEGRATION OF HIGH-k DIELECTRICS

2002 ◽  
Vol 12 (02) ◽  
pp. 295-304 ◽  
Author(s):  
M. CAYMAX ◽  
S. DE GENDT ◽  
W. VANDERVORST ◽  
M. HEYNS ◽  
H. BENDER ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Interface Layer ◽  
Layer Growth ◽  
Electrical Characteristics ◽  
High K ◽  
Alternative Materials ◽  
High K Materials ◽  
Electrical Reliability

Once the thickness of the gate dielectric layer in CMOS devices gets thinner than 1.2 nm, excessive gate leakage due to direct tunneling makes the use of alternative materials obligatory. Candidate high-k materials are metal oxides such as Al 2 O 3, ZrO 2 and HfO 2 as well as their mixtures. Very promising results have been reported world-wide. Here, however, we show that there are a number of issues related to materials and electrical characteristics as well as to processing which are not always recognized and that necessitate more work to find solutions. Among these are problems with density, interface layer growth and island formation which are clearly related to the deposition process. Also thermal instabilities as well as interactions between the high-k material and poly-Si need attention. Further possible show-stoppers are electrical reliability issues and strongly reduced carrier mobility.

scholarly journals Interfacial oxide growth at silicon∕high-k oxide interfaces: First principles modeling of the Si–HfO2 interface

2006 ◽  
Vol 100 (4) ◽  
pp. 043708 ◽  
Author(s):  
M. H. Hakala ◽  
A. S. Foster ◽  
J. L. Gavartin ◽  
P. Havu ◽  
M. J. Puska ◽  
...  
Keyword(s):  
First Principles ◽  
Oxide Growth ◽  
Oxide Interfaces ◽  
High K

Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric

2005 ◽  
Vol 26 (12) ◽  
pp. 876-878 ◽  
Author(s):  
Feng Zhu ◽  
Se Jong Rhee ◽  
Chang Yong Kang ◽  
Chang Hwan Choi ◽  
M.S. Akbar ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Gate Dielectric ◽  
Charge Trapping ◽  
High K

ADVANCED SOLUTIONS FOR MOBILITY ENHANCEMENT IN SOI MOSFETS

2011 ◽  
Vol 20 (01) ◽  
pp. 81-93
Author(s):  
L. PHAM-NGUYEN ◽  
C. FENOUILLET-BERANGER ◽  
P. PERREAU ◽  
S. DENORME ◽  
G. GHIBAUDO ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Channel Length ◽  
Current Status ◽  
Metal Gate ◽  
Fully Depleted ◽  
High K ◽  
Mobility Behavior ◽  
The Impact ◽  
Soi Technology ◽  
Technological Options

SOI technology offers ample room for scaling, performance improvement, and innovations. The current status is reviewed by focusing on several technological options for boosting the transport properties in SOI MOSFETs. The impact of series resistance, high-K dielectrics, and metal gate in advanced transistors is discussed. Carrier mobility measurements as a function of channel length and temperature reveal the beneficial effect of strain, mitigated however by various types of defects. The experimental data is exclusively collected from state-of-the-art, ultrathin body, fully depleted MOSFETs. Simple models are presented to clarify the mobility behavior.

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