Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions
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ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.
2013 ◽
Vol 415
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pp. 77-81
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2007 ◽
Vol 390
(1-2)
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pp. 151-154
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2006 ◽
Vol 518
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pp. 235-240
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2005 ◽
Vol 483-485
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pp. 625-628
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2013 ◽
Vol 27
(11)
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pp. 1350080
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