Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

2005 ◽  
Vol 483-485 ◽  
pp. 625-628 ◽  
Author(s):  
Fabio Bergamini ◽  
Francesco Moscatelli ◽  
Mariaconcetta Canino ◽  
Antonella Poggi ◽  
Roberta Nipoti
Keyword(s):  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Electrical Characterization ◽  
Reverse Leakage Current ◽  
Current Voltage ◽  
Exponential Trend ◽  
Current Voltage Characteristics ◽  
Post Implantation

We report on the electrical characterization of Al+ implanted p+/n 4H-SiC diodes via a planar technology. Hot implantation at 400°C and post implantation annealing at 1600°C and 1650°C in high purity Argon ambient were done for the realization of p+/n diodes. The current voltage characteristics of the p+/n diodes and the resistivity of the implanted layer were measured at room temperature. The majority of the 136 measured diodes had a turn on voltage of 1.75 V for both annealing temperatures. The 1600°C annealed diodes showed an almost exponential forward characteristic with ideality factor equal to 1.4, an average reverse leakage current density equal to (4.8 ± 0.1)×10-9 A/cm2 at –100 V, and a break down voltage between 600 and 900V. The 1650°C annealed diodes often had forward “excess current component” that deviates from the ideal forward exponential trend. The average reverse leakage current density was equal to (2.7 ± 0.5)×10-8 A/cm2 at –100 V, and the breakdown voltage was between 700 and 1000V, i.e. it approached the theoretical value for the epitaxial 4H-SiC layer.

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600°C

2005 ◽  
Vol 483-485 ◽  
pp. 629-632 ◽  
Author(s):  
Fabio Bergamini ◽  
Shailaja P. Rao ◽  
Stephen E. Saddow ◽  
Roberta Nipoti
Keyword(s):  
Leakage Current ◽  
Room Temperature ◽  
High Resistivity ◽  
Reverse Leakage Current ◽  
Current Voltage ◽  
Exponential Trend ◽  
Order Of Magnitude ◽  
Current Value ◽  
Post Implantation ◽  
Positive Results

Al+ implanted p+/n 4H-SiC diodes were realized via planar technology. The p+/n junctions were obtained by hot implantation at 400°C, followed by a post implantation annealing at 1600°C in Silane ambient. 136 diodes and other test structures were measured: the current voltage^curves and the resistivity of the implanted layer were investigated at room temperature. The majority of the measured diodes had a turn on voltage of about 1.75 V, a forward characteristic with exponential trend and ideality factor equal to 1.2, and a very low spread in the distribution of the reverse leakage current values at –100V. The average reverse leakage current value is (9.7 ± 0.4) × 10-9 A/cm2. The breakdown voltage of these diodes approached the theoretical value for the use epitaxial 4H-SiC layer, i.e. 0.75 – 1.0 kV. All these positive results are penalized by the high resistivity value of the implanted Al+ layer, which amounts to 11 W·cm that is one order of magnitude higher than the desired value.

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Electrical Characterization of the Grain-Boundary Region of SnO2 Varistors

2006 ◽  
Vol 518 ◽  
pp. 235-240 ◽  
Author(s):  
M. Žunić ◽  
Z. Branković ◽  
G. Branković ◽  
D. Poleti
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Electric Fields ◽  
Electrical Characterization ◽  
Boundary Region ◽  
Current Voltage ◽  
Schottky Type ◽  
Boundary Properties ◽  
Current Voltage Characteristics

The effect of Co, Cr and Nb on the electrical properties of the grain boundaries of SnO2-based varistors was investigated. The powders were prepared by the method of evaporation and decomposition of solutions and suspensions. Varistor samples were obtained by uniaxial pressing followed by sintering at 1300 °C for 1h. The electrical properties of the grain-boundary region, such as resistance (R) and capacitance (C), were determined using ac impedance spectroscopy in the 27-330 °C temperature interval. Activation energies for conduction (EA) were calculated from the Arrhenius equation. The non-linear coefficients (α) and the breakdown electric fields (Eb) of the samples were determined from the current-voltage characteristics. The potential barrier height (Φb) was calculated using the Schottky-type conducting model. After a comparison of the characteristic parameters for different varistor compositions it was found that the Cr/Nb ratio has a crucial influence on the grain-boundary properties in SnO2 varistors.

Optical and Electrical Characterization of Copper-and Chlorine-Doped Cadmium Zinc Telluride

1997 ◽  
Vol 487 ◽  
Author(s):  
J. E. Toney ◽  
B. A. Brunett ◽  
T. E. Schlesinger ◽  
E. Cross ◽  
F. P. Doty ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Charge Collection ◽  
Detector Response ◽  
Induced Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Cadmium Zinc ◽  
Low Temperature Photoluminescence

AbstractWe have used low-temperature photoluminescence spectroscopy and photo-induced current transient spectroscopy to study the properties of copper-doped Cd1−xZnxTe with x=0.1 and chlorine-doped Cd1−xZnxTe with x=0.2, 0.35 and 0.5. The current-voltage characteristics and detector response were also measured. We observed variations in charge collection and resistivity in the Cu-doped samples which was correlated with variations in PICTS spectra. The Cl-doped material was found to have insufficient resistivity for detector operation.

Electrical Characterization of Laser-Irradiated 4H-SiC Wafer

2002 ◽  
Vol 719 ◽  
Author(s):  
I. Salama ◽  
N. R Quick ◽  
A. Kar ◽  
Gilyong Chung
Keyword(s):  
Electronic Properties ◽  
Electrical Characterization ◽  
Electric Resistance ◽  
Current Voltage ◽  
Impurity Doping ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Sic Wafer ◽  
Conventional Annealing

AbstractHighly conductive tracks are generated in low-doped epilayers on 4H-SiC wafers using a laserdirect write technique. The current-voltage characteristics are measured to study the effect of the applied voltage on the electric resistance and the surface contact of the irradiated tracks. The effect of multiple irradiations on the electronic properties of the fabricated tracks was investigated and compared with the effect of the conventional annealing process. A laser doping process was used to achieve n-type as well as p-type impurity doping in the substrate. The electronic properties of the doped tracks are measured and compared with those of the untreated wafers. Microstructural observation and surface analysis of the irradiated tracks are studied. Laser fabrication of rectifying contact on SiC substrates is demonstrated.

Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current

2018 ◽  
Vol 924 ◽  
pp. 601-604 ◽  
Author(s):  
Gary Dolny ◽  
Yang Sheng ◽  
Yue Fu ◽  
S. Li ◽  
Rahul Radhakrishnan ◽  
...  
Keyword(s):  
Leakage Current ◽  
Thermionic Emission ◽  
Tunneling Model ◽  
Reverse Leakage Current ◽  
Current Voltage ◽  
Wide Range ◽  
Trap Assisted Tunneling ◽  
Current Voltage Characteristics ◽  
Multi Level ◽  
Assisted Tunneling

The reverse-bias current-voltage characteristics of commercial 1200 V 4H-silicon-carbide junction barrier Schottky (SiC-JBS) rectifiers are studied both experimentally and through numerical simulation. The reverse leakage current measured from physical devices is observed to display both a strong temperature and field dependence. A model is presented to explain the observed behavior based on a combination of trap-assisted tunneling and a thermionic-emission mechanism through a potential barrier located at the metal-SiC interface. The study shows that a two-level trapping model can be necessary to properly explain the measured data. Excellent agreement between the models and the measurements is obtained over a wide range of bias and temperature.

The effect of temperature on the electrical characterization of a poly(phenoxy-imine)/p-silicon heterojunction

e-Polymers ◽  
2016 ◽  
Vol 16 (1) ◽  
pp. 75-82
Author(s):  
Haci Ökkes Demir ◽  
Zakir Caldıran ◽  
Kadem Meral ◽  
Yılmaz Şahin ◽  
Murat Acar ◽  
...  
Keyword(s):  
Reverse Current ◽  
Electrical Characterization ◽  
Effect Of Temperature ◽  
Barrier Heights ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Barrier Inhomogeneities ◽  
Current Voltage Characteristics ◽  
Increasing Temperature

AbstractA poly(phenoxy-imine)/p-silicon rectifying device was fabricated and the current-voltage characteristics of the device were examined as a function of temperature in the 40–300 K range. The temperature dependence of the main parameters, namely, the barrier height (Φb), ideality factor (η), reverse current (I0) and series resistance (Rs), were investigated. It was seen that the Φb and the I0 values of the device increased with increasing temperature, while the η and the Rs values decreased. The temperature dependences of the Φb and the η were interpreted by the assumption of a Gaussian distribution of the barrier heights arising from barrier inhomogeneities that prevailed at the interface of the poly(phenoxyimine)/p-silicon. From ln(I0/T2) vs. 1/ηT plot, the values of the activation energy (Ea) and Richardson constant (A*) were calculated as 0.324 eV and 2.84×10-7 A cm-2K-2, respectively. The experimental value of the Rs from the forward current-voltage plots decreased with an increase in the temperature.

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