Dependence of structure and energy band gap on sensing properties of WO3:TeO2 thin films deposited by spray pyrolysis

2021 ◽  
pp. 413615
Author(s):  
A. Shirpay ◽  
M.M. Bagheri Mohagheghi
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Energy Band ◽  
Energy Band Gap ◽  
Sensing Properties

scholarly journals Optoelectronics applications of electrodeposited p- and n-type Al2Se3 thin films

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
A. A. Faremi ◽  
S. S. Oluyamo ◽  
O. Olubosede ◽  
I. O. Olusola ◽  
M. A. Adekoya ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Energy Band ◽  
Selenium Dioxide ◽  
Photoelectrochemical Cells ◽  
Energy Band Gap ◽  
Cathodic Deposition ◽  
Conductivity Type ◽  
P Type

Abstract In this paper, energy band gaps and electrical conductivity based on aluminum selenide (Al2Se3) thin films are synthesized electrochemically using cathodic deposition technique, with graphite and carbon as cathode and anode, respectively. Synthesis is done at 353 K from an aqueous solution of analytical grade selenium dioxide (SeO2), and aluminum chloride (AlCl2·7H2O). Junctions-based Al2Se3 thin films from a controlled medium of pH 2.0 are deposited on fluorine-doped tin oxide (FTO) substrate using potential voltages varying from 1,000 mV to 1,400 mV and 3 minutes −15 minutes respectively. The films were characterized for optical properties and electrical conductivity using UV-vis and photoelectrochemical cells (PEC) spectroscopy. The PEC reveals a transition in the conduction of the films from p-type to n-type as the potential voltage varies. The energy band gap reduces from 3.2 eV to 2.9 eV with an increase in voltage and 3.3 eV to 2.7 eV with increase in time. These variations indicate successful fabrication of junction-based Al2Se3 thin films with noticeable transition in the conductivity type and energy band gap of the materials. Consequently, the fabricated Al2Se3 can find useful applications in optoelectronic devices.

Energy Band Gap Shift of ZnS-ZnO Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 404 (1) ◽  
pp. 186-191 ◽  
Author(s):  
J.-K. Chung ◽  
J. W. Kim ◽  
D. Do ◽  
S. S. Kim ◽  
T. K. Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Energy Band ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Energy Band Gap

scholarly journals Dependence on the Partial Pressure of Oxygen on the Shift in the Energy Band-gap of CdO Thin Films in the Visible Region

2001 ◽  
Vol 24 (1) ◽  
pp. 57-61 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro ◽  
S. L. Sapienza
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Band Gap ◽  
Energy Band ◽  
Visible Region ◽  
Point Of View ◽  
Theoretical Point ◽  
Partial Pressure Of Oxygen ◽  
Energy Band Gap ◽  
Cdo Thin Films

In this paper, the dependence on the partial pressure of oxygen of the shift in the energy band-gap of CdO thin films for the visible region is investigated from the theoretical point of view on an experimental basis. In our analysis, the role played by the dependence of the carrier density upon the above pressure is emphasized.

Growth and energy band gap of CaSeS thin films prepared by hot-wall epitaxy

2007 ◽  
Vol 300 (2) ◽  
pp. 394-397
Author(s):  
Seishi Abe ◽  
Katashi Masumoto
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap ◽  
Hot Wall Epitaxy

scholarly journals ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

2016 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
Javed Iqbal ◽  
Asim Jilani ◽  
P.M. Ziaul Hassan ◽  
Saqib Rafique ◽  
Rashida Jafer ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Band Gap ◽  
Energy Band ◽  
Zno Thin Films ◽  
Energy Band Gap

Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 764 ◽  
Author(s):  
Sang Yeol Lee ◽  
Yuan Li ◽  
Jang-Sik Lee ◽  
J. K. Lee ◽  
M. Nastasi ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Energy Band ◽  
Pulsed Laser ◽  
Processing Parameters ◽  
Laser Deposition ◽  
Energy Band Gap ◽  
Sapphire Substrates ◽  
Optical Energy Band Gap

AbstractZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of ZnxCd1-xO as illustrated by Rutherford backscattering spectroscopy.

Influence of nickel doping on the energy band gap, luminescence, and magnetic order of spray deposited nanostructured ZnO thin films

2020 ◽  
Vol 816 ◽  
pp. 152538 ◽  
Author(s):  
H. Ali ◽  
A.M. Alsmadi ◽  
B. Salameh ◽  
M. Mathai ◽  
M. Shatnawi ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Energy Band ◽  
Magnetic Order ◽  
Zno Thin Films ◽  
Energy Band Gap ◽  
Nickel Doping

Band Gap Optimization by Ga and S Additions in CuInSe2 for Solar Cell Absorber Applications

2011 ◽  
Vol 110-116 ◽  
pp. 1176-1180
Author(s):  
Badrul Munir ◽  
Kim Kyoo Ho
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Energy Band ◽  
Pulsed Laser ◽  
Rf Magnetron Sputtering ◽  
Laser Deposition ◽  
Chalcopyrite Structure ◽  
Energy Band Gap ◽  
Absorption Coefficients ◽  
Optimum Energy

Gallium or sulphur additions in CuInSe2 were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films show a chalcopyrite structure with the S addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The films energy band gap could be shifted from 1.04 to 1.68eV by adjusting the mole ratio of S/(S+Se) and In/(In+Ga). It is possible to obtain the optimum energy band gap by adding S solute or Ga at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In to provide better properties of CIS films.

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