Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

2007 ◽  
Vol 38 (1-2) ◽  
pp. 85-88 ◽  
Author(s):  
Ch. Sargentis ◽  
K. Giannakopoulos ◽  
A. Travlos ◽  
D. Tsamakis
Keyword(s):  
Metallic Nanoparticles ◽  
Electrical Characterization ◽  
Memory Device ◽  
Self Assembled

Electrical Characterization of Mos Memory Devices with Self-Assembled Tungsten Nano-Dots Dispersed in Silicon Nitride

2019 ◽  
Vol 18 (1) ◽  
pp. 33-37
Author(s):  
Yanli Pei ◽  
Chengkuan Yin ◽  
Masahiko Nishijima ◽  
Toshiya Kojima ◽  
Hiroshi Noriha ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electrical Characterization ◽  
Memory Devices ◽  
Self Assembled

Structural and Electrical Characterization of a Block Copolymer-Based Unipolar Nonvolatile Memory Device

2011 ◽  
Vol 24 (3) ◽  
pp. 385-390 ◽  
Author(s):  
Nam-Goo Kang ◽  
Byungjin Cho ◽  
Beom-Goo Kang ◽  
Sunghoon Song ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Nonvolatile Memory ◽  
Electrical Characterization ◽  
Memory Device ◽  
Nonvolatile Memory Device

Electrical characterization of self-assembled single- and double-stranded DNA monolayers using conductive AFM

2006 ◽  
Vol 131 ◽  
pp. 367-376 ◽  
Author(s):  
Hezy Cohen ◽  
Claude Nogues ◽  
Daniela Ullien ◽  
Shirley Daube ◽  
Ron Naaman ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Conductive Afm ◽  
Dna Monolayers ◽  
Double Stranded Dna ◽  
Self Assembled

Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO2/ HfO2 Interface

2004 ◽  
Vol 830 ◽  
Author(s):  
Ch. Sargentis ◽  
K. Giannakopoulos ◽  
A. Travlos ◽  
D. Tsamakis
Keyword(s):  
High Frequency ◽  
Semiconductor Nanocrystals ◽  
Electrical Characterization ◽  
Pt Nanoparticles ◽  
Memory Device ◽  
Memory Devices ◽  
High K ◽  
High K Dielectric ◽  
Mos Device

ABSTRACTMOS memory devices containing semiconductor nanocrystals have drawn considerable attention recently, due to their advantages when compared to the conventional memories. Only little work has been done on memory devices containing metal nanoparticles.We describe the fabrication of a novel MOS device with embedded Pt nanoparticles in the HfO2 / SiO2 interface of a MOS device. Using as control oxide, a high-k dielectric, our device has a great degree of scalability. The fabricated nanoparticles are very small (about 5 nm) and have high density. High frequency C-V measurements demonstrate that this device operates as a memory device.

Eutectic Gallium–Indium (EGaIn): A Moldable Liquid Metal for Electrical Characterization of Self-Assembled Monolayers

2008 ◽  
Vol 120 (1) ◽  
pp. 148-150 ◽  
Author(s):  
Ryan C. Chiechi ◽  
Emily A. Weiss ◽  
Michael D. Dickey ◽  
George M. Whitesides
Keyword(s):  
Liquid Metal ◽  
Electrical Characterization ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled

Nanocrystal Memory Device Utilizing GaN Quantum Dots by RF MBE

2010 ◽  
Vol 1250 ◽  
Author(s):  
Panagiotis Dimitrakis ◽  
Eleftherios Iliopoulos ◽  
Pascal Normand
Keyword(s):  
Electrical Characterization ◽  
Energy Band Diagram ◽  
Memory Device ◽  
Hole Injection ◽  
Mos Devices ◽  
Molecular Beam Deposition ◽  
Frequency Plasma ◽  
Nanocrystal Memory ◽  
Beam Deposition

AbstractThe growth of GaN-QDs by radio frequency plasma assisted molecular beam deposition (RF-MBD) on thin SiO2 films for non-volatile memories (NVM) applications is demonstrated. Thermal budget modification during the deposition allows tuning of the size and density of the QDs. Preliminary electrical characterization of GaN-QD MOS devices reveals efficient electron injection at very low voltages from the Si accumulation layer to the QDs. The observed limitation in hole injection relates adequately to the energy band diagram of the structure.

Sign in / Sign up

Export Citation Format

Share Document