Effect of InSb deposition time on low-temperature photoluminescence and room temperature Raman of MOVPE grown InSb/GaSb nanostructures

2020 ◽  
Vol 123 ◽  
pp. 114197 ◽  
Author(s):  
Chinedu Christian Ahia ◽  
Ngcali Tile ◽  
Edson L. Meyer ◽  
Johannes Reinhardt Botha
1986 ◽  
Vol 89 ◽  
Author(s):  
Y. Lansari ◽  
N. C. Giles ◽  
J. F. Schetzina ◽  
P. Becia ◽  
D. Kaiser

AbstractThe introduction of phosphorus and arsenic dopants into bulk Cd1−xMnx Te crystals grown by the Bridgman-Stockbarger technique has been studieA-with respect to the resulting optical properties. Samples with a Mn composition in the range 0.10 < x < 0.30, both as-grown and annealed, were investigated. A combination of room temperature transmittance and reflectance measurements over the spectral range from the ultraviolet to the far infrared has been used to gain information concerning the structural quality of the samples. Low temperature photoluminescence measurements (1.6−5 K) were used to determine optical quality and excitonic energies.


1988 ◽  
Vol 116 ◽  
Author(s):  
A. Freundlich ◽  
G. Neu ◽  
A. Leycuras ◽  
R. Carles ◽  
C. Verie

AbstractResidual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.


2002 ◽  
Vol 09 (05n06) ◽  
pp. 1667-1670 ◽  
Author(s):  
M. GARCÍA-ROCHA ◽  
I. HERNÁNDEZ-CALDERÓN

Ultrathin quantum wells (UTQWs) of CdTe within ZnTe barriers were successfully grown by atomic layer epitaxy (ALE) on GaAs(001) substrates. ALE growth of CdTe was performed by alternate exposure of the substrate surface to individual fluxes of Cd and Te. Two different samples with 2-monolayer (ML) (substrate temperature Ts= 270° C ) and 4 ML (Ts = 290° C ) CdTe QWs were grown. Low temperature photoluminescence (PL) experiments exhibited intense and sharp peaks associated to the 2 ML QWs at 2.26 eV. In the case of the nominally 4-ML-thick QW the PL spectrum presented an intense peak around 2.13 eV and two weak features around 2.04 and 1.91 eV. The first peak is attributed to ~ 3 ML QW and the second one to ~ 4 ML QW. The dominance of the 3 ML peak is mainly attributed to Cd loss in the QW due to its substitution by Zn atoms. Due to a high diffusion length of the photogenerated carriers in the barriers, quite weak signals from the ZnTe barriers were observed in both cases. Room temperature (RT) photoreflectance (PR) spectra showed contributions from the CdTe UTQWs, the ZnTe barriers, and the GaAs substrate.


2014 ◽  
Vol 2 (37) ◽  
pp. 7859-7868 ◽  
Author(s):  
Daragh Byrne ◽  
Aidan Cowley ◽  
Nick Bennett ◽  
Enda McGlynn

The room temperature Raman, photoluminescence and low temperature photoluminescence properties are examined to give a deeper understanding of CuAlO2.


2004 ◽  
Vol 815 ◽  
Author(s):  
M. Yoganathan ◽  
A. Gupta ◽  
E. Semenas ◽  
E. Emorhokpor ◽  
C. Martin ◽  
...  

AbstractSemi-insulating (SI) 6H-SiC boules up to 110mm in diameter have been grown by Physical Vapor Transport (PVT). SI properties have been achieved by vanadiumc compensation, which resulted in the room temperature electrical resistivity exceeding 2×1011ωcm. Low temperature photoluminescence (LTPL) data shows the presence of the deep intrinsic defect level UD-1 in addition to V4+. The nitrogen-bound exciton (NBE) luminescence is weak in heavily vanadium compensated 6H-SiC.


1998 ◽  
Vol 510 ◽  
Author(s):  
Hirokazu Sanpei ◽  
Takayuki Shima ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Yasuhiro Fukuzawa ◽  
...  

AbstractThe role of hydrogen (H) in carbon (C)-doped GaAs was examined by co-doping of C and H atoms using low-energy hydrocarbon (CH+ and CH3+) ions. Experiments were carried out using the combined ion beam and molecular beam epitaxy (CIBMBE) system. Samples were characterized by low-temperature photoluminescence at 2K and Hall effect measurements at room temperature. Results show that incorporated C atoms are optically and electrically activated as acceptors even by hydrocarbon ion impingement. The effect of H incorporation was found to be noticeable when impinged current density of CH3+ ion beam is high that produces equivalent net hole carrier concentration greater than ∼1018 cm−3


1995 ◽  
Vol 395 ◽  
Author(s):  
H. Morkoç ◽  
W. Kim ◽  
Ö. Aktas ◽  
A. Salvador ◽  
A. Botchkarev ◽  
...  

ABSTRACTGaN films and GaN/AlGaN heterostructures have been gro wn by MBE. GaN films doped with varying levels of Mg indicate effective mass acceptor at low doping concentrations, as determined from strong photoluminescence emission at about 380 nm. As the Mg concentration is increased the photoluminescence emission line red shifts considerably, indicating the formation of Mg-related or induced complexes whose lifetimes are relatively short. GaN/AlGaN separate confinement heterostructures grown on sapphire show strong near ultraviolet stimulated emission at room temperature in a side-pumping configuration. The pumping threshold for stimulated emission at room temperature was found to be ∼90 kW/cm2. Initial GaN films grown on ZnO substrates show the A exciton in low temperature photoluminescence. ZnO is being considered for nitride growth because of its stacking order and close lattice match.


1982 ◽  
Vol 43 (C5) ◽  
pp. C5-383-C5-392 ◽  
Author(s):  
K. H. Goetz ◽  
A. V. Solomonov ◽  
D. Bimberg ◽  
H. Jürgensen ◽  
M. Razeghi ◽  
...  

2004 ◽  
Vol 52 (4) ◽  
pp. 479-487 ◽  
Author(s):  
Cs. Pribenszky ◽  
M. Molnár ◽  
S. Cseh ◽  
L. Solti

Cryoinjuries are almost inevitable during the freezing of embryos. The present study examines the possibility of using high hydrostatic pressure to reduce substantially the freezing point of the embryo-holding solution, in order to preserve embryos at subzero temperatures, thus avoiding all the disadvantages of freezing. The pressure of 210 MPa lowers the phase transition temperature of water to -21°C. According to the results of this study, embryos can survive in high hydrostatic pressure environment at room temperature; the time embryos spend under pressure without significant loss in their survival could be lengthened by gradual decompression. Pressurisation at 0°C significantly reduced the survival capacity of the embryos; gradual decompression had no beneficial effect on survival at that stage. Based on the findings, the use of the phenomena is not applicable in this form, since pressure and low temperature together proved to be lethal to the embryos in these experiments. The application of hydrostatic pressure in embryo cryopreservation requires more detailed research, although the experience gained in this study can be applied usefully in different circumstances.


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