Pathway Clustering of the Up-regulated Genes in the Stimulated Rice Seedlings that Germinating from the Seeds Implanted by the Low-Energy Nitrogen Ion

The current knowledge of the transcriptome is limited to understand the exact molecular mechanism of the ion-implantation biological effects on cereals. In order to investigating the overall characteristics of the transcript profiles associated with these puzzling biological effects. We used the Agilent Rice Oligo Microarray （4×44K）Genome Array to learn the molecular mechanism in rice responding to ion-implantation. Rice seeds were implanted by the Nitrogen ion beam and their vigor index was investigated at ten days after germination. Total RNAs was extracted from the rice seedlings at 96 hour after germination and hybridized by the genome genechip. The results of measuring of the vigor index showed that lower-dose implantation of the nitrogen ion beam (6×1017 N+/cm2) promoted the vigor index of the rice seedlings and the higher-dose implantation (9×1017 N+/cm2) damaged the rice seedlings because of the smaller vigor index than the control. The analysis of the genechip array showed that there were 982 transcripts expressed differentially (fold change＞2 and P value＜0.05) including 429 up-regulated transcripts and 553 down-regulated transcripts under the dose3 6×1017 N+/cm2. 30 out of the 553 down-regulated transcripts were involved in 48 pathways. 14 out of these 30 transcripts were associated with more than two interrelated pathways. Os04g0518400 (Phenylalanine ammonia-lyase 2 (PAL; EC 4.3.1.5; down-regulated 3.3 folds; p value=0.005) were involved in 7 pathways, Os07g0446800 (Hexokinase; dwon-regulated 2.8 folds; p value =0.006) were involved in 12 pathways, and Os02g0730000 (Mitochondrial aldehyde dehydrogenase ALDH2a; down-regulated 2.2 folds; p value=0.019) were involved in 13 pathways. These results revealed that down-regulated genes involving important pathways were compatible with the distinct cellular events in response to implantation of low-energy ion beam and supplied the first comprehensive and comparative molecular information for further understanding the mechanism underlying implantation of the low-energy nitrogen ion beam.

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Characterization of nitrogen species incorporated into graphite using low energy nitrogen ion sputtering

Physical Chemistry Chemical Physics ◽

10.1039/c5cp02305j ◽

2016 ◽

Vol 18 (1) ◽

pp. 458-465 ◽

Cited By ~ 10

Author(s):

Hisao Kiuchi ◽

Takahiro Kondo ◽

Masataka Sakurai ◽

Donghui Guo ◽

Junji Nakamura ◽

...

Keyword(s):

Low Energy ◽

Nitrogen Species ◽

Ion Sputtering ◽

Zigzag Edge ◽

Nitrogen Doped ◽

Doping Mechanism ◽

Nitrogen Ions ◽

Nitrogen Ion

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.

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Temperature-Dependent Tribological Improvements in Low-Energy Nitrogen Ion Implanted Vanadium-Titanium Alloys

World Tribology Congress III, Volume 2 ◽

10.1115/wtc2005-64203 ◽

2005 ◽

Author(s):

C. Ballesteros ◽

J. A. Garci´a ◽

M. I. Orti´z ◽

R. Rodri´guez ◽

M. Varela

Keyword(s):

Tribological Properties ◽

Low Energy ◽

Temperature Dependent ◽

Structural Modifications ◽

Nanocomposite Layer ◽

Implantation Temperature ◽

Transmission Electron ◽

Nitrogen Ion ◽

Tribological Characterization

A detailed tribological characterization of low-energy, nitrogen implanted V5 at. %Ti alloy is presented. Samples were nitrogen-implanted at an accelerating voltage of 1.2 kV and 1 mA/cm2, up to a dose of 1E19 ions/cm2. The tribological properties of the alloys: microhardness, friction coefficient and wear resistance, have improved after ion implantation and this improvement increases as the implantation temperature increases. The microstructure of the alloys were analysed by transmission electron microscopy. A direct correlation between structural modifications of the nitrogen implanted layer and the improvement in their tribological properties is obtained. For samples implanted at 848 K a nanocomposite layer where the reinforcement particles are TiN precipitates forms. TiN precipitation appears as the responsible of the improvement in the tribological properties.

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