Investigation of Al2O3 diffusion barrier layer fabricated by atomic layer deposition for flexible Cu(In,Ga)Se2 solar cells

Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se2 (CIGS) solar cells. Before the deposition of TiN thin film on CIGS solar cells, a saturated growth rate of 0.67 Å/cycle was confirmed using tetrakis(dimethylamido)titanium (TDMAT) and N2 plasma at 200 °C. Then, a Mo (≈30 nm)/PEALD-TiN (≈5 nm)/Mo (≈600 nm) back contact stack was fabricated to investigate the effects of PEALD-TiN thin films on the Se diffusion. After the selenization process, it was revealed that ≈5 nm-thick TiN thin films can effectively block Se diffusion and that only the top Mo layer prepared on the TiN thin films reacted with Se to form a MoSe2 layer. Without the TiN diffusion barrier layer, however, Se continuously diffused along the grain boundaries of the entire Mo back contact electrode. Finally, the adoption of a TiN diffusion barrier layer improved the photovoltaic efficiency of the CIGS solar cell by approximately 10%.

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Defect Control for High‐Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells by Atomic Layer Deposition of Al 2 O 3 on Precursor Film

Solar RRL ◽

10.1002/solr.202100181 ◽

2021 ◽

pp. 2100181

Author(s):

Yali Sun ◽

Pengfei Qiu ◽

Siyu Wang ◽

Hongling Guo ◽

Rutao Meng ◽

...

Keyword(s):

Solar Cells ◽

Atomic Layer Deposition ◽

High Efficiency ◽

Atomic Layer ◽

Precursor Film ◽

Layer Deposition ◽

Defect Control

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Optimization of a SiOx/SiNxOyCz multilayer structure for a reliable gas diffusion barrier via low-temperature plasma-enhanced atomic layer deposition

Ceramics International ◽

10.1016/j.ceramint.2019.01.027 ◽

2019 ◽

Vol 45 (6) ◽

pp. 7407-7412 ◽

Cited By ~ 1

Author(s):

Ju-Hwan Han ◽

Su Ho Lim ◽

Jin-Myung Choi ◽

Seong-Hyeon Lee ◽

Woojin Jeon ◽

...

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Diffusion Barrier ◽

Multilayer Structure ◽

Atomic Layer ◽

Gas Diffusion ◽

Low Temperature Plasma ◽

Temperature Plasma ◽

Layer Deposition

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Direct comparison of atomic layer deposition and sputtering of In2O3:H used as transparent conductive oxide layer in CuIn1−xGaxSe2 thin film solar cells

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2016.07.012 ◽

2016 ◽

Vol 157 ◽

pp. 757-764 ◽

Cited By ~ 16

Author(s):

Jan Keller ◽

Asim Aijaz ◽

Fredrik Gustavsson ◽

Tomas Kubart ◽

Lars Stolt ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Atomic Layer Deposition ◽

Oxide Layer ◽

Atomic Layer ◽

Transparent Conductive Oxide ◽

Thin Film Solar Cells ◽

Layer Deposition ◽

Conductive Oxide

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Surface Passivation of Organometal Halide Perovskite by Atomic Layer Deposition: a Mechanism Investigation Enabling Efficient Inverted Planar Solar Cells

Nanoscale Advances ◽

10.1039/d1na00075f ◽

2021 ◽

Author(s):

Ran Zhao ◽

Kai Zhang ◽

Jiahao Zhu ◽

Shuang Xiao ◽

Wei Xiong ◽

...

Keyword(s):

Solar Cells ◽

Atomic Layer Deposition ◽

High Efficiency ◽

Surface Passivation ◽

Perovskite Solar Cells ◽

Wide Band ◽

Atomic Layer ◽

Layer Deposition ◽

Halide Perovskite ◽

Interface Passivation

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...

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