scholarly journals Phase development in RbInSe2 thin films – a temperature series

2021 ◽  
Vol 202 ◽  
pp. 113999
Author(s):  
Nikolaus Weinberger ◽  
Tim Kodalle ◽  
Tobias Bertram ◽  
René Gunder ◽  
Andreas Saxer ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Series ◽  
Phase Development

Phase development and crystallization of CuAlO2 thin films prepared by pulsed laser deposition

2010 ◽  
Vol 30 (2) ◽  
pp. 509-512 ◽  
Author(s):  
Jong-Chul Lee ◽  
Se-Young Um ◽  
Young-Woo Heo ◽  
Joon-Hyung Lee ◽  
Jeong-Joo Kim
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Phase Development

Phase development, microstructure and optical properties of Cu 2 ZnSnSe 4 thin films modified with Pb and Ti

2013 ◽  
Vol 231 ◽  
pp. 389-393 ◽  
Author(s):  
Seung Min Lee ◽  
Bhaskar Chandra Mohanty ◽  
Yeon Hwa Jo ◽  
Deuk Ho Yeon ◽  
Yong Soo Cho
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Phase Development

Growth and Characterizations of Relaxor-Based Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Films by Sol-Gel Method

2007 ◽  
Vol 280-283 ◽  
pp. 839-844
Author(s):  
Hui Qing Fan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Sol Gel ◽  
Silicon Substrates ◽  
Final Annealing ◽  
Gel Method ◽  
Sol Gel Method ◽  
Phase Development ◽  
Transmission Electron ◽  
Pt Films

Relaxor-based 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were grown epitaxially on silicon substrates by sol-gel method and PbO cover coat technique, and investigated by x-ray diffraction, auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The phase development and microstrure evolution of the PMN-PT film were significantly affected by the final annealing temperature and time. A perovskite PMN-PT film was obtained after annealing at 850oC for 1 min. Then, highly <100>-oriented and textured PMN-PT films could be achieved by using a LaNiO3 perovskite template.

Preparation and Microstructure Evolution of Both Freestanding and Supported TiO2 Thin Films

2002 ◽  
Vol 17 (6) ◽  
pp. 1520-1528 ◽  
Author(s):  
Chen-Lung Fan ◽  
Daniel Ciardullo ◽  
Jay Paladino ◽  
Wayne Huebner
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Grain Size ◽  
Grain Growth ◽  
Anatase Phase ◽  
Rutile Phase ◽  
Tio2 Thin Films ◽  
Cover Glass ◽  
Citrate Complex ◽  
Phase Development

Thin films of TiO2 were fabricated by spin-coating silicon wafers and cover glass with a titanium citrate complex precursor. The grain growth and phase development of both freestanding and supported films were studied using a combination of atomic force microscopy, x-ray diffraction, and transmission electron microscopy. Freestanding films prepared at 400 °C possess only the anatase phase, while supported films treated under the same conditions formed a small amount of the rutile phase. After heat treatment at various temperatures, results indicated that porosity was introduced into the films when the grain size grew close to the film thickness. Grain growth studies show that the grain size of the freestanding film underwent a drastic increase during the transformation from anatase to rutile. The grain size of the supported films did not show an abrupt change upon heat treatment. The grain size of the freestanding films treated at 900 °C was approximately three times larger than that of the supported films.

Microstructure and Properties of A-Site Doping Bi4-xYxTi3O12 Ferrroelectric Thin Films

2015 ◽  
Vol 815 ◽  
pp. 171-175
Author(s):  
Hong Cheng Liu ◽  
Wei Jun Zhang ◽  
Xiao Chen Zhang ◽  
Qian Yu ◽  
Jue Wang
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Phase Development ◽  
Sol Gel Process ◽  
A Site

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.

Phase development in pulsed laser deposited Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films

2000 ◽  
Vol 370 (1-2) ◽  
pp. 70-77 ◽  
Author(s):  
V Bornand ◽  
S Trolier-Mckinstry
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Phase Development

Characteristics of oxide thin films from carboxylate precursors

1991 ◽  
Vol 6 (8) ◽  
pp. 1736-1743 ◽  
Author(s):  
Peir-Yung Chu ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Solvent System ◽  
Buffer Layers ◽  
Oxide Thin Films ◽  
Fine Grained ◽  
Si Substrates ◽  
Thermal Pyrolysis ◽  
Metal Nitrates ◽  
Phase Development ◽  
Heat Treated

Oxide thin films on Si substrates were prepared from carboxylate precursors by the reaction of the metal nitrates and ammonium trimethylacetate. Precursor salts were characterized with respect to purity, structure, thermal pyrolysis, and phase development during calcination. A solvent system, based on carboxylic acid/amine mixture, was developed to dissolve the synthesized precursors, resulting in increased solubility, viscosity, and stability. Smooth, fine-grained ZrO2, Y2O3, and YSZ films were obtained on Si wafers by spin-coating and subsequent heat treatment above 500 °C. Films heat treated below 700 °C were generally adherent, amorphous, or microcrystalline, while YSZ and ZrO2 showed (111) preferred orientation above 700 °C. These oxide films show promise as protective or buffer layers on Si wafers.

Preparation of epitaxial Pb(Mg1/3Ta2/3)O3 thin film by chemical solution deposition

2002 ◽  
Vol 17 (11) ◽  
pp. 2884-2887 ◽  
Author(s):  
D. S. Jeong ◽  
J-H. Moon ◽  
B-T. Lee ◽  
J. H. Kim
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Perovskite Phase ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Phase Development ◽  
Transmission Electron ◽  
Powder Samples ◽  
Relationship Of

Pb(Mg1/3Ta2/3)O3 (PMT) powders and heteroepitaxial thin films on (001) SrTiO3 (STO) substrates were prepared by the chemical solution deposition method. The phase development in PMT powders and thin films was investigated by x-ray diffraction, and the microstructure of PMT thin films was studied by transmission electron microscopy. Phase transformation from pyrochlore to perovskite in the PMT powder samples occurred in the temperature range of 700–800 °C, and perovskite phase was mainly observed in samples annealed above 800 °C. However, perovskite phase in PMT thin films on STO substrates was formed mainly in samples annealed as low as 750 °C/1 h, and it shows an epitaxial orientation relationship of [100](001)PMT∥[100](001)STO.

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