Characteristics of oxide thin films from carboxylate precursors

Oxide thin films on Si substrates were prepared from carboxylate precursors by the reaction of the metal nitrates and ammonium trimethylacetate. Precursor salts were characterized with respect to purity, structure, thermal pyrolysis, and phase development during calcination. A solvent system, based on carboxylic acid/amine mixture, was developed to dissolve the synthesized precursors, resulting in increased solubility, viscosity, and stability. Smooth, fine-grained ZrO2, Y2O3, and YSZ films were obtained on Si wafers by spin-coating and subsequent heat treatment above 500 °C. Films heat treated below 700 °C were generally adherent, amorphous, or microcrystalline, while YSZ and ZrO2 showed (111) preferred orientation above 700 °C. These oxide films show promise as protective or buffer layers on Si wafers.

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Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.881-883.1117 ◽

2014 ◽

Vol 881-883 ◽

pp. 1117-1121 ◽

Cited By ~ 1

Author(s):

Xiang Min Zhao

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Buffer Layers ◽

Zno Thin Films ◽

Zno Films ◽

Si Substrates ◽

Atomic Force ◽

Structure Morphology ◽

Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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Engineered oxide thin films as 100% lattice match buffer layers for YBCO coated conductors

Solid-State Electronics ◽

10.1016/s0038-1101(03)00192-8 ◽

2003 ◽

Vol 47 (12) ◽

pp. 2171-2175 ◽

Cited By ~ 17

Author(s):

Y. Akin ◽

Z.K. Heiba ◽

W. Sigmund ◽

Y.S. Hascicek

Keyword(s):

Thin Films ◽

Coated Conductors ◽

Buffer Layers ◽

Oxide Thin Films ◽

Lattice Match ◽

Ybco Coated Conductors

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Selective Atomic Layer Deposition of Metal Oxide Thin Films on Patterned Self-Assembled Monolayers Formed by Microcontact Printing

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.18067 ◽

2007 ◽

Vol 7 (11) ◽

pp. 3758-3764

Author(s):

Byoung H. Lee ◽

Myung M. Sung

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Microcontact Printing ◽

Atomic Layer ◽

Oxide Thin Films ◽

Metal Oxide Thin Films ◽

Si Substrates ◽

Layer Deposition ◽

Assembled Monolayers

We demonstrate a selective atomic layer deposition of TiO2, ZrO2, and ZnO thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the metal oxide thin films using atomic layer deposition. The selective atomic layer deposition is based on the fact that the metal oxide thin films are selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsiloxane monolayers do not have any functional group to react with precursors.

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