Enhanced photochromic response in oxygen-containing yttrium hydride thin films transformed by an oxidation process

2017 ◽  
Vol 166 ◽  
pp. 185-189 ◽  
Author(s):  
Chang Chuan You ◽  
Dmitrii Moldarev ◽  
Trygve Mongstad ◽  
Daniel Primetzhofer ◽  
Max Wolff ◽  
...  
2013 ◽  
Vol 22 ◽  
pp. 9-21 ◽  
Author(s):  
Chii Rong Yang ◽  
Tun Ping Teng ◽  
Yun Yu Yeh

In this study, we successfully combined RF magnetron sputtering of a pure Ti metal target and one-stage oxidation process with a wider oxygen ratio (10%-90%) and total sputtering flow rate (16-24 sccm) to produce TiO2thin films on a glass substrate. The crystallization, morphology, roughness, and thickness of the thin films were examined using XRD, HR-FESEM, AFM, and a profilometer. Subsequently, the photocatalytic performance was examined using a spectrometer and video tensiometer. The experimental results show that the TiO2thin films with a majority of anatase and higher roughness exhibit superior photocatalytic performance; the total sputtering gas flow rate of 18 sccm and oxygen content at 10% is the optimal option. Finally, an empirical formula to correlate the film thickness with deposition time was conducted for the sputtering flow rate of 18 sccm and the oxygen content of 10%.


2012 ◽  
Vol 1477 ◽  
Author(s):  
Marco A. Zepeda ◽  
Michel Picquart ◽  
Emmanuel Haro-Poniatowski

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).


2013 ◽  
Vol 770 ◽  
pp. 225-228
Author(s):  
L. Uttayan ◽  
K. Aiempanakit ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
V. Pattantsetakul ◽  
...  

Titanium dioxide (TiO2) films were prepared by thermal oxidation from Ti films. The Ti films were deposited on glass and silicon (100) wafer substrate by dc magnetron sputtering and subsequent with thermal oxidation process. The crystal structure and morphology of TiO2 films were estimated by using X-ray diffractometry (XRD) and field-emission scanning electron microscopy (FE-SEM), respectively. The optical property of TiO2 films was determined by UV-Visible spectrophotometer. The influences of annealing temperature between 200 to 500°C in air for 1 hour on the structure and optical properties of TiO2 films were investigated. The increasing of annealing temperature was directly affected the phase transition from Ti to TiO2. The optical and structural properties of TiO2 films are the best exhibited with increasing the annealing temperature at 500 °C.


2019 ◽  
Vol 48 (7) ◽  
pp. 4715-4725 ◽  
Author(s):  
M. Hamici ◽  
Kh. Guessoum ◽  
L. Vaillant ◽  
Y. Gagou ◽  
P. Saint-Grégoire

2011 ◽  
Vol 509 ◽  
pp. S812-S816 ◽  
Author(s):  
T. Mongstad ◽  
C. Platzer-Björkman ◽  
S.Zh. Karazhanov ◽  
A. Holt ◽  
J.P. Maehlen ◽  
...  

1993 ◽  
Vol 8 (6) ◽  
pp. 1220-1225 ◽  
Author(s):  
Takashi Hase ◽  
Ryusuke Kita ◽  
Kenichi Kawaguchi ◽  
Takeshi Koga ◽  
Tadataka Morishita

Growth behavior of YBa2Cu3O7-x (YBCO) thin films from metallic Y–Ba–Cu precursors was investigated. The precursors were prepared by coevaporation of the constituent metallic sources under ultra-high vacuum conditions, and they were oxidized in a load lock chamber and a tube furnace. The grain size of YBCO and degree of crystallographic orientation of the films increased with decreasing oxygen partial pressure p(O2) during transformation of the precursor into the crystal close to the thermodynamic stability line of YBa2Cu3O6.0 in a p(O2) – 1/T phase diagram. The growth of YBCO crystal is controlled by the oxygen diffusion along the c-axis direction of the crystal. The diffusion coefficient of oxygen is determined as D = 1.94 × 1010 exp(−433 000/RT) (cm2/s).


1994 ◽  
Vol 19 (1-3) ◽  
pp. 637-641 ◽  
Author(s):  
T. Aste ◽  
D. Beruto ◽  
R. Botter ◽  
C. Ciccarelli ◽  
M. Giordani ◽  
...  

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