scholarly journals Strongly enhanced upconversion in trivalent erbium ions by tailored gold nanostructures: Toward high-efficient silicon-based photovoltaics

2020 ◽  
Vol 208 ◽  
pp. 110406 ◽  
Author(s):  
Jeppe Christiansen ◽  
Joakim Vester-Petersen ◽  
Søren Roesgaard ◽  
Søren H. Møller ◽  
Rasmus E. Christiansen ◽  
...  
Keyword(s):  
Gold Nanostructures ◽  
Erbium Ions ◽  
High Efficient ◽  
Silicon Based

Erbium Emission from Silicon Based Photonic Bandgap Materials

2000 ◽  
Vol 638 ◽  
Author(s):  
Herman A. Lopez ◽  
J. Eduardo Lugo ◽  
Selena Chan ◽  
Sharon M. Weiss ◽  
Christopher C. Striemer ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Fiber Optics ◽  
Photonic Bandgap ◽  
Crystalline Silicon ◽  
Temperature Oxidation ◽  
Erbium Ions ◽  
Photonic Bandgap Materials ◽  
Order Of Magnitude ◽  
Silicon Based ◽  
Photonic Bandgap Structures

AbstractControl over the 1.5 µm emission from erbium is desirable for communication and computational technologies because the erbium emission falls in the window of maximum transmission for silica based fiber optics. Tunable, narrow, directional, and enhanced erbium emission from silicon based 1-D photonic bandgap structures will be demonstrated. The structures are prepared by anodic etching of crystalline silicon and consist of two highly reflecting Bragg reflectors sandwiching an active layer. The cavities are doped by electro-migrating the erbium ions into the porous silicon matrix, followed by high temperature oxidation. By controlling the oxidation temperature, porosity, and thickness of the structure, the position of the erbium emission is tuned to emit in regions where the normal erbium emission is very weak. The erbium emission from the cavity is narrowed to a full width at half maximum (FWHM) of 12 nm with a cavity quality factor Q of 130, highly directional with a 20 degree emission cone around the normal axis, and enhanced by more than one order of magnitude when compared to its lateral emission. Erbium photoluminescence (PL) from porous silicon 2-D photonic bandgap structures is also demonstrated.

A Silicon-Based Infra-Red Photodetector Exploiting Erbium-Doped Silicon Nanocrystals

2003 ◽  
Vol 770 ◽  
Author(s):  
Anthony J. Kenyon ◽  
Sukhvinder S. Bhamber ◽  
Christopher W. Pitt
Keyword(s):  
Oxide Layer ◽  
Silicon Nanocrystals ◽  
Rare Earth Ions ◽  
Silicon Nanoclusters ◽  
Erbium Ions ◽  
Erbium Doped ◽  
Infra Red ◽  
Doped Silicon ◽  
Silicon Based ◽  
A Current

AbstractWe have exploited the interaction between erbium ions and silicon nanoclusters to produce a photodetector for use in the spectral region around 1.5 μm. The device consists of an MOS structure in which the oxide layer has been implanted with both erbium and silicon and annealed to produce silicon nanocrystals around 3 nm in diameter. Upon illumination with a 1480 nm laser diode, the well-known interaction between the nanocrystals and the rare-earth ions results in a transfer of excitation from the erbium ion to nearby silicon nanocrystals. The resultant modification of the conductivity of the oxide layer enables a current to flow when a voltage is applied.

Broadband spectra translation between mid-infrared band and telecom band in a nonlinear silicon-based symmetric hybrid plasmonic waveguide

2018 ◽  
Vol 27 (02) ◽  
pp. 1850022 ◽  
Author(s):  
Xibin Li ◽  
Zhihua Tu ◽  
Qiang Jin ◽  
Shiming Gao ◽  
Sailing He
Keyword(s):  
Optical Switching ◽  
Geometry Optimization ◽  
Plasmonic Waveguide ◽  
Infrared Band ◽  
Mid Infrared ◽  
Silica Substrate ◽  
Hybrid Plasmonic Waveguide ◽  
High Efficient ◽  
Silicon Based ◽  
All Optical Switching

A symmetric hybrid plasmonic waveguide is designed to realize high-efficient conversion between mid-infrared (MIR) and telecom wavelength bands. The proposed hybrid plasmonic waveguide consists of an insulator–metal–insulator structure buried into a silicon ridge on silica substrate. By using geometry optimization, the dispersion of waveguide is optimized, leading to broadband (resulting in a 3-dB bandwidth of 1,919[Formula: see text]nm from 1.496[Formula: see text][Formula: see text]m to 3.415[Formula: see text][Formula: see text]m) and efficient (resulting in a peak conversion efficiency of [Formula: see text]18.9[Formula: see text]dB) four-wave mixing (FWM) in a 200-[Formula: see text]m-long waveguide pumped by a 1.725-[Formula: see text]m source of 0.5 W. This waveguide configuration shows its great potential in all-optical switching between MIR band and telecom band.

scholarly journals Dewetted Gold Nanostructures onto Exfoliated Graphene Paper as High Efficient Glucose Sensor

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1794
Author(s):  
Antonino Scandurra ◽  
Francesco Ruffino ◽  
Maria Censabella ◽  
Antonio Terrasi ◽  
Maria Grazia Grimaldi
Keyword(s):  
Laser Annealing ◽  
Glucose Sensor ◽  
Saturated Calomel Electrode ◽  
Glucose Sensing ◽  
Gold Nanostructures ◽  
Actual State ◽  
Nanosecond Laser ◽  
Rutherford Back Scattering ◽  
High Efficient ◽  
Graphene Paper

Non-enzymatic electrochemical glucose sensing was obtained by gold nanostructures on graphene paper, produced by laser or thermal dewetting of 1.6 and 8 nm-thick Au layers, respectively. Nanosecond laser annealing produces spherical nanoparticles (AuNPs) through the molten-phase dewetting of the gold layer and simultaneous exfoliation of the graphene paper. The resulting composite electrodes were characterized by X-ray photoelectron spectroscopy, cyclic voltammetry, scanning electron microscopy, micro Raman spectroscopy and Rutherford back-scattering spectrometry. Laser dewetted electrode presents graphene nanoplatelets covered by spherical AuNPs. The sizes of AuNPs are in the range of 10–150 nm. A chemical shift in the XPS Au4f core-level of 0.25–0.3 eV suggests the occurrence of AuNPs oxidation, which are characterized by high stability under the electrochemical test. Thermal dewetting leads to electrodes characterized by faceted not oxidized gold structures. Glucose was detected in alkali media at potential of 0.15–0.17 V vs. saturated calomel electrode (SCE), in the concentration range of 2.5μM−30 mM, exploiting the peak corresponding to the oxidation of two electrons. Sensitivity of 1240 µA mM−1 cm−2, detection limit of 2.5 μM and quantifications limit of 20 μM were obtained with 8 nm gold equivalent thickness. The analytical performances are very promising and comparable to the actual state of art concerning gold based electrodes.

Porous Silicon Based Solar Cells

2010 ◽  
Vol 663-665 ◽  
pp. 836-839 ◽  
Author(s):  
Yuan Ming Huang ◽  
Qing Lan Ma ◽  
Ming Meng ◽  
Bao Gai Zhai
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Porous Silicon ◽  
Photovoltaic Effect ◽  
Sunlight Irradiation ◽  
Novel Approach ◽  
Current Voltage ◽  
High Efficient ◽  
Silicon Based ◽  
High Hope

The primary aim of this communication is to introduce a novel approach of preparation of solar cell, viz. PS based solar cell, which is on the basis of the basic principle of the well established photovoltaic effect. We carefully investigate the current-voltage characteristics of the PS-based solar cell by virtue of performing the measurement of both current and voltage of PS-based solar cell under the condition of the sunlight irradiation and priori to sunlight irradiation in the purpose of observing clearly the photovoltaic effect possessed by the PS based solar cell. Judging by the results obtained in this paper, we can safely draw the conclusion that porous silicon is a good candidate material for the preparation of solar cell, that is to say that our study is giving high hope for the industrial production of high efficient PS-based thin film solar cells.

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley
Keyword(s):  
Corrosion Protection ◽  
Silicon Based

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

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