Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

2017 ◽  
Vol 111 ◽  
pp. 123-133 ◽  
Author(s):  
Dharmendra Singh Yadav ◽  
Abhishek Verma ◽  
Dheeraj Sharma ◽  
Sukeshni Tirkey ◽  
Bhagwan Ram Raad
Keyword(s):  
Gate Dielectric ◽  
Comparative Investigation ◽  
Charge Plasma ◽  
Rf Performance

A charge-plasma-based dual-metal-gate recessed-source/drain dopingless junctionless transistor with enhanced analog and RF performance

2020 ◽  
Vol 19 (3) ◽  
pp. 1085-1099
Author(s):  
Prateek Kishor Verma ◽  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Santosh Kumar Gupta
Keyword(s):  
Metal Gate ◽  
Charge Plasma ◽  
Junctionless Transistor ◽  
Dual Metal ◽  
Rf Performance ◽  
A Charge

Comparative Investigation on Bias Dependent RF Performance of SOI Substrates

2019 ◽  
Vol 8 (6) ◽  
pp. Q137-Q140
Author(s):  
Yongwei Chang ◽  
Shuo Wang ◽  
Lei Zhu ◽  
Kai Lu ◽  
Yemin Dong ◽  
...  
Keyword(s):  
Comparative Investigation ◽  
Rf Performance ◽  
Soi Substrates

Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric

2003 ◽  
Vol 251 (1-4) ◽  
pp. 837-842 ◽  
Author(s):  
B Yang ◽  
P.D Ye ◽  
J Kwo ◽  
M.R Frei ◽  
H.-J.L Gossmann ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Oxide Interface ◽  
Rf Performance

Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures

2021 ◽  
Vol 13 (2) ◽  
pp. 289-293
Author(s):  
Jung-Hui Tsai ◽  
Jing-Shiuan Niu ◽  
Xin-Yi Huang ◽  
Wen-Chau Liu
Keyword(s):  
Electron Mobility ◽  
Gate Dielectric ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Comparative Investigation ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Radio Frequency Sputtering ◽  
Transistor Mos

In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.

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