Gate misalignment effects on analog/RF performance of charge plasma-based doping-less tunnel FET

2017 ◽  
Vol 123 (6) ◽  
Author(s):  
Sunny Anand ◽  
R. K. Sarin
Keyword(s):  
Charge Plasma ◽  
Tunnel Fet ◽  
Rf Performance

Temperature impact on linearity and analog/RF performance metrics of a novel charge plasma tunnel FET

2021 ◽  
Vol 127 (4) ◽  
Author(s):  
Nitish Parmar ◽  
Prabhat Singh ◽  
Dip Prakash Samajdar ◽  
Dharmendra Singh Yadav
Keyword(s):  
Performance Metrics ◽  
Charge Plasma ◽  
Tunnel Fet ◽  
Temperature Impact ◽  
Rf Performance

scholarly journals A SiGe-Source Doping-Less Double-Gate Tunnel FET: Design and Analysis Based on Charge Plasma Technique with Enhanced Performance

2021 ◽  
Author(s):  
Varun Mishra ◽  
Yogesh Kumar Verma ◽  
Santosh Kumar Gupta ◽  
Vikas Rathi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Source Material ◽  
Double Gate ◽  
Charge Plasma ◽  
Plasma Technique ◽  
Tunnel Fet ◽  
Distortion Analysis ◽  
Dual Gate ◽  
Rf Performance

Abstract In this article, a distinctive charge plasma (CP) technique is employed to design two doping-less dual gate tunnel field effect transistors (DL-DG-TFETs) with Si0.5Ge0.5 and Si as source material. The CP methodology resolves the issues of random doping fluctuation and doping activation. The analog and RF performance has been investigated for both the proposed devices i.e. Si0.5Ge0.5 source DL-DG-TFET and Si-source DL-DG-TFET in terms of drive current, transconductance, cut-off frequency. In addition, the linearity and distortion analysis has been carried out for both the proposed devices with respect to higher order transconductance (gm2 and gm3), VIP2, IMD3, and HD2. The Si0.5Ge0.5 source DL-DG-TFET has better performance characteristics and reliability in compare to Si-source DL-DG-TFET owing to low energy bandgap material and higher mobility. The switching ratio obtained for Si0.5Ge0.5 source DL-DG-TFET is order of 5×1014 that makes it a suitable contender for low power applications.

A charge-plasma-based dual-metal-gate recessed-source/drain dopingless junctionless transistor with enhanced analog and RF performance

2020 ◽  
Vol 19 (3) ◽  
pp. 1085-1099
Author(s):  
Prateek Kishor Verma ◽  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Santosh Kumar Gupta
Keyword(s):  
Metal Gate ◽  
Charge Plasma ◽  
Junctionless Transistor ◽  
Dual Metal ◽  
Rf Performance ◽  
A Charge

Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

2017 ◽  
Vol 111 ◽  
pp. 123-133 ◽  
Author(s):  
Dharmendra Singh Yadav ◽  
Abhishek Verma ◽  
Dheeraj Sharma ◽  
Sukeshni Tirkey ◽  
Bhagwan Ram Raad
Keyword(s):  
Gate Dielectric ◽  
Comparative Investigation ◽  
Charge Plasma ◽  
Rf Performance

Impact of Different III-V material used in Source of Dual Gate Tri-Metal n-type Tunnel FET for Improved RF Performance

2021 ◽  
Author(s):  
Ritam Dutta ◽  
Nitai Paitya ◽  
Manisha Rahaman ◽  
Ankita Guha ◽  
Priya Kumari
Keyword(s):  
Tunnel Fet ◽  
Dual Gate ◽  
Rf Performance
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