Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET)

2018 ◽  
Vol 113 ◽  
pp. 769-776 ◽  
Author(s):  
Amir Hossein Bayani ◽  
Jan Voves ◽  
Daryoosh Dideban
Keyword(s):  
Effective Mass ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effective Mass Approximation ◽  
Atomistic Model ◽  
Mass Approximation ◽  
Effect Transistor ◽  
Output Characteristics

3D Modelling Of The Novel Nanoscale Screen-Grid FET

2006 ◽  
Vol 913 ◽  
Author(s):  
Pei W. Ding ◽  
Kristel Fobelets ◽  
Jesus E Velazquez-Perez
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Simulation Software ◽  
The Novel ◽  
Channel Coupling ◽  
3 Dimensional ◽  
Gate Control ◽  
Effect Transistor ◽  
Screen Grid ◽  
Output Characteristics

AbstractA novel field effect transistor (FET) that uses 3-dimensional (3-D) embedded gate fingers – the Screen-Grid Field Effect Transistor (SGFET) – is proposed. The gating action of the SGFET is based on the design of multiple gating cylinders into the channel region, perpendicular to the current flow. Such configuration allows a full 3-D gate control of the current which improves the device characteristics by increasing the gate to channel coupling. Initial investigations of the SGFET using 3-D TCAD TaurusTM simulation software are presented in this paper. The results indicate that the proposed SGFET offers the possibility of downscaling without degrading the output characteristics. A comparison between the SGFET and both bulk and SOI MOSFETs shows the superior characteristics of the SGFET for low power operation.

Design and Simulation of Electrochemical Equivalent Circuit for Extended-gate FET pH Sensor Based on Experimental Value Using LTSPICE XVII

2021 ◽  
Author(s):  
Shaiful Bakhtiar Hashim ◽  
Zurita Zulkifli ◽  
Sukreen Hana Herman
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Spice Simulation ◽  
Discrete Component ◽  
Ph Values ◽  
Spice Model ◽  
Effect Transistor ◽  
Output Characteristics

Abstract A SPICE model for extended-gate field-effect transistor (EGFET) based pH sensor was developed using standard discrete components. Capacitors and resistors were used to represent the sensing and reference electrodes in the EGFET sensor system and the values of the discrete component were varied to see the output of the transistor. These variations were done to emulate the EGFET sensor output in different pH values. It was found that the experimental transfer and output characteristics of the EGFET were very similar to those from the SPICE simulation. Other than that, the changes of value components in the equivalent circuit did not affect the transfer and output characteristics graph, but the capacitor value produced significant output variation in the simulation. This can be related to the modification on the equivalent circuit was done with additional voltage, VSB (source to bulk) to produce the different VT values at different pH.

Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

2018 ◽  
Vol 924 ◽  
pp. 949-952 ◽  
Author(s):  
David J. Spry ◽  
Philip G. Neudeck ◽  
Dorothy Lukco ◽  
Liang Yu Chen ◽  
Michael J. Krasowski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Earth Atmosphere ◽  
Surface Atmosphere ◽  
Effect Transistor ◽  
Output Characteristics ◽  
Technology Demonstrator

This report describes more than 5000 hours of successful 500 °C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology demonstrator circuits have surpassed thousands of hours of oven-testing at 500 °C. After 100 hours of 500 °C burn-in, the circuits (except for 2 failures) exhibit less than 10% change in output characteristics for the remainder of 500 °C testing. We also describe the observation of important differences in IC materials durability when subjected to the first nine constituents of Venus-surface atmosphere at 9.4 MPa and 460 °C in comparison to what is observed for Earth-atmosphere oven testing at 500 °C.

Negative-effective-mass ballistic field-effect transistor: Theory and modeling

2000 ◽  
Vol 87 (10) ◽  
pp. 7466-7475 ◽  
Author(s):  
Z. S. Gribnikov ◽  
N. Z. Vagidov ◽  
A. N. Korshak ◽  
V. V. Mitin
Keyword(s):  
Effective Mass ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Effective Mass ◽  
Effect Transistor ◽  
Theory And Modeling

Preparation and Output Characteristics of Molybdenum Disulfide Field Effect Transistor

2021 ◽  
pp. 255-259
Author(s):  
Chaorun Pu ◽  
Qiuhong Tan ◽  
Chao Zhang ◽  
Li Ren ◽  
Xia Zhang ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Output Characteristics

NOVEL STRUCTURES FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS

2009 ◽  
Vol 23 (19) ◽  
pp. 3871-3880 ◽  
Author(s):  
RAHIM FAEZ ◽  
SEYED EBRAHIM HOSSEINI
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Conventional Structure ◽  
Source Voltage ◽  
Effect Transistor ◽  
Output Characteristics ◽  
Novel Structures

A carbon nanotube field effect transistor (CNTFET) has been studied based on the Schrödinger–Poisson formalism. To improve the saturation range in the output characteristics, new structures for CNTFETs are proposed. These structures are simulated and compared with the conventional structure. Simulations show that these structures have a wider output saturation range. With this, larger drain-source voltage (Vds) can be used, which results in higher output power. In the digital circuits, higher Vds increases noise immunity.

Use of Vacuum as a Gate Dielectric: The SiC VacFET

2011 ◽  
Vol 679-680 ◽  
pp. 657-661 ◽  
Author(s):  
Kevin M. Speer ◽  
Philip G. Neudeck ◽  
Mehran Mehregany
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Vacuum Field ◽  
Analytical Design ◽  
Turn On ◽  
Device Architecture ◽  
Effect Transistor ◽  
Output Characteristics ◽  
Processing Techniques

We introduce the vacuum field-effect transistor (VacFET), the first SiC FET to use a vacuum-sealed cavity in place of the traditional, solid gate dielectric. This device architecture eliminates the need to thermally oxidize the SiC surface, a practice which has been widely reported to inhibit the performance and reliability of SiC MOSFETs. Using a combination of batch-compatible electronics and micromachining processing techniques, a polycrystalline SiC bridge is suspended above a 4H-SiC substrate, and the underlying cavity is sealed under vacuum. The fundamental studies made possible by such a device could shed much-needed light on the basic electronic properties of an inverted SiC surface. In this introductory report, we detail the analytical design and fabrication necessary to manufacture the VacFET, and we also demonstrate proof of the concept using turn-on and output characteristics of the first functional SiC device.

scholarly journals Design of HeterojunctionTunnel Field-Effect Transistors with SiO2 isolation between Source and Drain for Low Power Application

2021 ◽  
Author(s):  
Sweta Chander ◽  
Sanjeet Kumar Sinha ◽  
Prince Kumar Singh ◽  
Ashish Kumar Singh
Keyword(s):  
Electric Field ◽  
Temperature Variation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Output Characteristics ◽  
Power Application

Abstract This paper presents a numerically simulated Ge-source based Tunnel Field Effect Transistor with (TFETs) SiO 2 segregation between the channel and drain. The developed device has been compared with conventional TFET and without isolated heterojunction TFET. The use of oxide segregation between channel and drain enhances the performance of the device in terms of ON-state current as well as subthreshold swing (SS). The electrical characteristics such as surface potential, electric field, transfer characteristics, output characteristics of the proposed device have been studied. The temperature variation of the proposed device has also been studied. The proposed device offers high ON current of 3x10 4 A, I ON /I OFF ratio of ~10 11, and enhanced SS of 30 mV/dec. The validity of the proposed device has been done by Synopsys Sentaurus TCAD.

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