Efficient ultraviolet photodetector device based on modulated wide band gap Type-II CuO/CdSe core-shell nanowires

2018 ◽  
Vol 123 ◽  
pp. 234-241 ◽  
Author(s):  
Bamadev Das ◽  
Kadambinee Sa ◽  
Prakash Chandra Mahakul ◽  
B.V.R.S. Subramanyam ◽  
Sonali Das ◽  
...  
ACS Nano ◽  
2015 ◽  
Vol 9 (6) ◽  
pp. 6419-6427 ◽  
Author(s):  
Satish C. Rai ◽  
Kai Wang ◽  
Yong Ding ◽  
Jason K. Marmon ◽  
Manish Bhatt ◽  
...  

2006 ◽  
Vol 929 ◽  
Author(s):  
Adrian E. Mendez ◽  
Mark A Prelas ◽  
Michael Glascock ◽  
Tushar K Ghosh

ABSTRACTThe purpose of this paper is to report the experimental results of boron doping on 60-80 micron size diamond particles using Field Enhanced Diffusion with Optical activation (FEDOA) [1-5]. Diamond is a wide band gap material with unique combinations of optical, thermal, mechanical and electronic properties that can be useful for a number of applications including optoelectronic applications and micro sensor technology. The incorporation of boron into diamond has been proven to change its electrical properties and convert the diamond from insulator to a p-type semiconductor [3]. A promising technique for incorporation of impurities into diamond is FEDOA. FEDOA drives impurities into single crystalline diamond material and we have used this method in this study [5-7]. FEDOA uses a combination of thermal diffusion with bias plus thermal ionization and optical ionization I simultaneously. A modified version of FEDOA was implemented for the diffusion of boron in natural diamond type II/a powder of size 60-80 microns (Figure 1). The diamond powder was obtained from Microdiamant and has 99.9% purity. The boron powder used in the experiment was amorphous, 325 mesh 90 %(Assay), Mg (5%) nominal obtained from AESAR. A ratio of 3:1 Boron-Diamond mixture was used for the doping process. A heating element and a diamond-boron powder mixture holder were designed and incorporated in the FEDOA system. Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS) were used to study the diamond-doped morphology and identify impurities. Boron and hydrogen concentration results in the doped samples were studied using Prompt Gamma Neutron Activation Analysis (PGNAA) at the University of Missouri Research Reactor (MURR). Raman analysis of the treated samples was done as part of this work. The experimental results and analysis show that the samples were doped with boron. It was also found that samples with high boron concentration exhibited a high electrical conductivity. This work presents additional evidence that boron can be diffused into natural diamond powders. It also demonstrates that the FEDOA diffusion process is not only a powerful technique for the diffusion of impurities into wide band-gap materials in the form of single crystal plates, polycrystalline plate but also in a powder form with the modified FEDOA process.


2020 ◽  
Vol 34 (12) ◽  
Author(s):  
Ning Yu ◽  
Siwen Tao ◽  
Jiawen Cui ◽  
Huawei Zhou ◽  
Yan Chen ◽  
...  

2019 ◽  
Vol 3 (3) ◽  
pp. 437-449 ◽  
Author(s):  
Anuraj S. Kshirsagar ◽  
Pawan K. Khanna

A novel nano-hybrid using a small-band-gap CuSbSe2 and wide-band-gap TiO2 is formed via microwave and thermal methods for efficient photocatalytic degradation of organic dyes.


Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>


Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  

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