Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane

2006 ◽  
Vol 200 (10) ◽  
pp. 3134-3139 ◽  
Author(s):  
Y.L. Cheng ◽  
Y.L. Wang ◽  
G.J. Hwang ◽  
M.L. O'Neill ◽  
E.J. Karwacki ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Low Dielectric Constant ◽  
Low Dielectric

Deposition of SiO2:F:C Films With Low Dielectric Constant and With High Resistance to Annealing

1999 ◽  
Vol 606 ◽  
Author(s):  
J. Lubguban ◽  
Y. Kurata ◽  
T. Inokuma ◽  
S. Hasegawa
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
High Resistance ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Rf Power ◽  
Low Dielectric

AbstractSiO2:F:C films were deposited using a plasma-enhanced chemical vapor deposition (PECVD) technique from SiH4/O2/CF4/CH4 mixtures. Increasing amount of carbon were introduced to the SiO2:F films by changing the CH4 flow rate, [CH4], while keeping constant other conditions such as rf power and deposition temperature, TD. It was found that the addition of CH4 decreases the dielectric constant, k; from 3.36 for [CH4] = 0 sccm to 2.95 for [CH4] = 8 sccm. For the [CH4] condition where the film has a lowest k, the deposition temperature and rf power were optimized by depositing films using different values of TD and rf power The k for films in the new series as well as the stress and water absorption was investigated. Results show that the dielectric constant further decrease up to 2.85. Some films were then annealed from 400 - 800 °C and it was found that the k for films deposited with higher [CH4] has a better stability with respect to annealing up to a temperature of 600 °C.

Preparation of low dielectric constant F‐doped SiO2 films by plasma enhanced chemical vapor deposition

1996 ◽  
Vol 68 (6) ◽  
pp. 832-834 ◽  
Author(s):  
Sang Woo Lim ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano ◽  
Kunio Tada ◽  
Hiroshi Komiyama
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Sio2 Films ◽  
Low Dielectric
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