Size dependence of the Anderson singularity index and Seebeck coefficient of thin monodisperse nanocluster metal films

2018 ◽  
Vol 343 ◽  
pp. 69-74 ◽  
Author(s):  
P.V. Borisyuk ◽  
O.S. Vasilyev ◽  
T.I. Kozlova ◽  
Yu.Yu. Lebedinskii ◽  
V.V. Fetisov ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Size Dependence ◽  
Metal Films ◽  
Singularity Index

Electronic properties of nanostructured metal films: the evolution of Anderson singularity index with size

2018 ◽  
Vol 214 ◽  
pp. 251-253
Author(s):  
P.V. Borisyuk ◽  
T.I. Kozlova ◽  
Yu.Yu. Lebedinskii ◽  
O.S. Vasilyev
Keyword(s):  
Electronic Properties ◽  
Metal Films ◽  
Singularity Index ◽  
Nanostructured Metal

Seebeck Coefficient Effects of Nanoscale Conductors in a Gaseous Flow Environment

2011 ◽  
Vol 1329 ◽  
Author(s):  
Patrick L. Garrity ◽  
Kevin L. Stokes
Keyword(s):  
Seebeck Coefficient ◽  
Surface Area ◽  
Impact Energy ◽  
High Speed ◽  
Volume Ratio ◽  
Thermal Control ◽  
Metal Films ◽  
Surface Scattering ◽  
Scattering Effects ◽  
Collision Density

ABSTRACTThe surrounding ambient introduces a gaseous boundary to many potential nanotechnology applications such as nanoscale thermoelectric devices and low dimensional thermal control devices. Despite the large surface area to volume ratio of nanostructures, a formal study of the surface scattering effects induced by a gaseous boundary has received little attention. In this work, we consider the perturbing effects to the electron cloud or jellium of conducting nanostructures when submitted to a gaseous interface of varying interaction energies. Specifically, we incorporate the novel experimental method of Dynamic Electron Scattering (DES) to measure the Seebeck coefficient of 30 nm thick Au and Cu metal films in He and Ar atmospheres. The gas particle impact energy is varied by changing the flow speed from stationary (non-moving gas field) to high speed flow over the metal films. The scattering effects of each gas are clearly observable through a Seebeck coefficient increase as the gas impact energy increases. We find the high collision density of He to induce a greater increase in thermopower than the much heavier Ar with lower collision density. The perturbed transport properties of the Au and Cu thin films are explained by kinetic surface scattering mechanisms that dominate the scattering landscape of high surface area to volume ratio materials as suggested by comparative measurements on bulk Cu.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

FERROMAGNETISM IN EPITAXIAL TRANSITION METAL FILMS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1657-C8-1658 ◽  
Author(s):  
C. M. Schneider ◽  
J. J. de Miguel ◽  
P. Bressler ◽  
J. Garbe ◽  
S. Ferrer ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Films

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

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