scholarly journals In-Situ Grown Nanoscale p-n Heterojuction of Cu2S-TiO2 Thin Film for Efficient Photoelectrocatalytic H2 Evolution

2021 ◽  
pp. 101660
Author(s):  
Satya Veer Singh ◽  
Urwashi Gupta ◽  
Sajal Biring ◽  
Bratindranath Mukherjee ◽  
Bhola N. Pal
2015 ◽  
Vol 17 (44) ◽  
pp. 29637-29646 ◽  
Author(s):  
Ying Zhang ◽  
Stephan Kupfer ◽  
Linda Zedler ◽  
Julian Schindler ◽  
Thomas Bocklitz ◽  
...  

A pronounced wavelength dependence of charge transfer character is observed, indicating that these 4H-imidazole-ruthenium complexes are potential multi-photoelectron donors.


2010 ◽  
Vol 108 (1) ◽  
pp. 013522 ◽  
Author(s):  
M. Horprathum ◽  
P. Chindaudom ◽  
P. Limnonthakul ◽  
P. Eiamchai ◽  
N. Nuntawong ◽  
...  

Author(s):  
K. Barmak

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.


Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).


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