scholarly journals Suppression of V-pits formation in InGaN layer by stepped growth with annealing interval

2022 ◽  
Vol 28 ◽  
pp. 101691
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang
Keyword(s):  
Ingan Layer

Influence of Thickness of p-InGaN Layer on the Device Physics and Material Qualities of GaN-Based LEDs With p-GaN/ InGaN Heterojunction

2018 ◽  
Vol 65 (12) ◽  
pp. 5373-5380 ◽  
Author(s):  
Zhiting Lin ◽  
Xiaofeng Chen ◽  
Yuhan Zhu ◽  
Xiwu Chen ◽  
Liegeng Huang ◽  
...  
Keyword(s):  
Device Physics ◽  
Ingan Layer

The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN

2007 ◽  
Author(s):  
Yanjun Han ◽  
Zhongtao Liu ◽  
Yi Luo ◽  
Hongxia Ma ◽  
Xianpeng zhang ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Ingan Layer

Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells

2018 ◽  
Vol 5 (2) ◽  
pp. 025906 ◽  
Author(s):  
Xiaowei Wang ◽  
Jing Yang ◽  
Degang Zhao ◽  
Desheng Jiang ◽  
Zongshun Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Layer Growth ◽  
Multiple Quantum Wells ◽  
Luminescence Properties ◽  
Multiple Quantum ◽  
Ingan Layer

GaN-Based Light-Emitting-Diode With a p-InGaN Layer

2014 ◽  
Vol 10 (3) ◽  
pp. 204-207
Author(s):  
P. H. Chen ◽  
Cheng-Huang Kuo ◽  
W. C. Lai ◽  
Yu An Chen ◽  
L. C. Chang ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Ingan Layer ◽  
Light Emitting

Probing The Indium Mole Fraction In An Ingan Epilayer By Depth Resolved Cathodoluminescence

1997 ◽  
Vol 482 ◽  
Author(s):  
C. Trager-Cowan ◽  
P. G. Middleton ◽  
A. Mohammed ◽  
K. P. O'Donnell ◽  
W. Van der Stricht ◽  
...  
Keyword(s):  
Electron Beam ◽  
Mole Fraction ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Mean Value ◽  
Ingan Layer ◽  
Cathodoluminescence Spectroscopy ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical ◽  
Variable Energy

AbstractCathodoluminescence spectroscopy is used to depth profile the indium mole fraction of a 0.4 μm InGaN epilayer grown by metalorganic chemical vapour deposition, and to probe an underlying 1.0 μm GaN epilayer and the sapphire substrate beneath. Spectral information is obtained by using a variable energy electron beam as the excitation source. Calibration of beam penetration is achieved using Monte Carlo simulations of electron beam trajectories. The indium mole fraction is found to decrease from a mean value of 27% at the surface of the InGaN layer to ≈ 24% at its interface with the GaN layer.

InGaN-Channel FETs – Growth, Technology and Characteristics

2001 ◽  
Vol 680 ◽  
Author(s):  
E. Kohn ◽  
I. Daumiller ◽  
M. Neuburger ◽  
M. Seyboth ◽  
C. Kirchner ◽  
...  
Keyword(s):  
Strain Field ◽  
Layer Growth ◽  
Ingan Layer ◽  
Electron Hole ◽  
Modulation Doping ◽  
Barrier Layers ◽  
Hole Charge ◽  
Sheet Charge ◽  
Oriented Material ◽  
Growth Technology

ABSTRACTMaking use of the polar nature of III-nitride heterostructures, a new FET device concept is proposed. The structure contains an InGaN QW channel sandwiched in between two GaN barrier layers. The charge inthis structure is mainly generated by the strain field in the InGaN layer and is an electron/hole dipole sheet charge located at the opposite InGaN/GaN interfaces. To obtain nchannel characteristics the hole charge at the rear interface (for Ga-face oriented material) is compensated by donor doping of the channel or by modulation doping from the real GaN barrier layer. Growth, processing technology and characteristics of first fabricated devices is discussed.

InGaN/AlGaN Double-Heterostructure Blue Leds

1994 ◽  
Vol 339 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Blue Light ◽  
Full Width ◽  
Half Maximum ◽  
Ingan Layer ◽  
Peak Wavelength ◽  
Forward Voltage ◽  
High Brightness ◽  
Light Emitting ◽  
Double Heterostructure ◽  
First Time

ABSTRACTHigh-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with a luminous intensity of 1.2 cd were fabricated successfully for the first time. As an active layer, a Zn-doped InGaN layer was used. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 nm and 70 nm, respectively. The forward voltage was as low as 3.6V at 20 mA.

Growth of InGaN layer on GaN templated Al2O3 (0001) and Si (111) substrates by mixed-source HVPE

2007 ◽  
Vol 4 (1) ◽  
pp. 125-128 ◽  
Author(s):  
S. L. Hwang ◽  
K. S. Jang ◽  
K. H. Kim ◽  
H. S. Jeon ◽  
H. S. Ahn ◽  
...  
Keyword(s):  
Ingan Layer
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