InGaN-Channel FETs – Growth, Technology and Characteristics

2001 ◽  
Vol 680 ◽  
Author(s):  
E. Kohn ◽  
I. Daumiller ◽  
M. Neuburger ◽  
M. Seyboth ◽  
C. Kirchner ◽  
...  
Keyword(s):  
Strain Field ◽  
Layer Growth ◽  
Ingan Layer ◽  
Electron Hole ◽  
Modulation Doping ◽  
Barrier Layers ◽  
Hole Charge ◽  
Sheet Charge ◽  
Oriented Material ◽  
Growth Technology

ABSTRACTMaking use of the polar nature of III-nitride heterostructures, a new FET device concept is proposed. The structure contains an InGaN QW channel sandwiched in between two GaN barrier layers. The charge inthis structure is mainly generated by the strain field in the InGaN layer and is an electron/hole dipole sheet charge located at the opposite InGaN/GaN interfaces. To obtain nchannel characteristics the hole charge at the rear interface (for Ga-face oriented material) is compensated by donor doping of the channel or by modulation doping from the real GaN barrier layer. Growth, processing technology and characteristics of first fabricated devices is discussed.

Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells

2018 ◽  
Vol 5 (2) ◽  
pp. 025906 ◽  
Author(s):  
Xiaowei Wang ◽  
Jing Yang ◽  
Degang Zhao ◽  
Desheng Jiang ◽  
Zongshun Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Layer Growth ◽  
Multiple Quantum Wells ◽  
Luminescence Properties ◽  
Multiple Quantum ◽  
Ingan Layer

scholarly journals Molybdenum trioxide thin film recombination barrier layers for dye sensitized solar cells

RSC Advances ◽  
2017 ◽  
Vol 7 (77) ◽  
pp. 48853-48860 ◽  
Author(s):  
Aditya Ashok ◽  
S. N. Vijayaraghavan ◽  
Shantikumar V. Nair ◽  
Mariyappan Shanmugam
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Barrier Layer ◽  
Molybdenum Trioxide ◽  
Dye Sensitized Solar Cells ◽  
Electron Hole ◽  
Barrier Layers ◽  
Dye Sensitized ◽  
Sensitized Solar Cells ◽  
Hole Recombination

MoO3 thin film recombination barrier layer suppresses electron–hole recombination at the FTO–TiO2 interface and facilitates charge transport.

Enhanced photocatalytic performance at a Au/N–TiO2hollow nanowire array by a combination of light scattering and reduced recombination

2014 ◽  
Vol 16 (33) ◽  
pp. 17748-17755 ◽  
Author(s):  
P. Sudhagar ◽  
Anitha Devadoss ◽  
Taeseup Song ◽  
P. Lakshmipathiraj ◽  
Hyungkyu Han ◽  
...  
Keyword(s):  
Light Scattering ◽  
Visible Light ◽  
Charge Separation ◽  
Nitrogen Doping ◽  
Photocatalytic Performance ◽  
Nanowire Array ◽  
Au Nanoparticle ◽  
Electron Hole ◽  
Hole Charge

Maximizing the Au nanoparticle decoration on TiO2nanowire through nitrogen doping for simultaneous enhancement in visible light scattering and electron–hole charge separation.

MBE Grown Planar Doped Barrier Diodes

1999 ◽  
Vol 570 ◽  
Author(s):  
Vo Van Tuyen
Keyword(s):  
Epitaxial Growth ◽  
Potential Barrier ◽  
Doping Concentration ◽  
Layer Growth ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Current Limitation ◽  
Background Doping ◽  
P Type ◽  
Growth Technology

The realization of Planar Doped Barrier Diode (PDBD) presented in this paper starts out from the limits of the MBE layer growth technology. The limitations due to the background doping concentration and the diffusion of the n and p type dopants during the epitaxial growth are considered. The next parameter is the height of the potential barrier. The choice of this value depends on the requirements of the application. It must take into consideration the current transport mechanisms and the current limitation appearing at higher bias levels.

Intramolecular Polarization Induces Electron–Hole Charge Separation in Light-Harvesting Molecular Triads

2013 ◽  
Vol 118 (1) ◽  
pp. 126-134 ◽  
Author(s):  
Luis G. C. Rego ◽  
Bruno C. Hames ◽  
Kahio T. Mazon ◽  
Jan-Ole Joswig
Keyword(s):  
Charge Separation ◽  
Light Harvesting ◽  
Electron Hole ◽  
Hole Charge

Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3

2017 ◽  
Vol 102 ◽  
pp. 35-39 ◽  
Author(s):  
J. Yang ◽  
D.G. Zhao ◽  
D.S. Jiang ◽  
P. Chen ◽  
J.J. Zhu ◽  
...  
Keyword(s):  
Layer Growth ◽  
Ingan Layer ◽  
Incorporation Efficiency

Photoinduced electron-hole charge separation, intrinsic self-doping and novel device applications of Q1D heterojunction materials: mixed-halide MX solids

1993 ◽  
Vol 54 (1-3) ◽  
pp. 385-390 ◽  
Author(s):  
A. Saxena ◽  
X.Z. Huang ◽  
A.R. Bishop ◽  
L.A. Worl ◽  
S.P. Love ◽  
...  
Keyword(s):  
Charge Separation ◽  
Electron Hole ◽  
Novel Device ◽  
Hole Charge ◽  
Device Applications

scholarly journals An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 237-245 ◽  
Author(s):  
F. A. Buot
Keyword(s):  
Resonant Tunneling ◽  
Large Scale ◽  
Step Function ◽  
Rate Equations ◽  
Device Structure ◽  
Electron Hole ◽  
Hole Charge ◽  
Interband Tunneling ◽  
High Bandwidth ◽  
Tunneling Dynamics

We introduced a novel high-frequency source based on interband tunneling. A polarization-induced oscillation of trapped-hole-charge occurs in an AlGaSb/InAs/ AlGaSb resonant tunneling device. Rate equations for Zener tunneling, polarization, and electron-hole recombination is used to analyze the nonlinear dynamics of this device structure. The nonoscillatory state is unstable against the limit-cycle operation. The amplitude of trapped hole oscillation increases with bias, but the time-averaged values can be approximated by a step function. These lead to the hysteresis of the averaged trapped hole charge in AlGaSb barrier, and to the experimental intrinsic bistability in AlGaSb/InAs/AlGaSb resonant tunneling device. Large-scale time-dependent simulation of quantum transport with interband-tunneling dynamics is needed for the design optimization of this novel class of oscillator useful for high-bandwidth applications.

scholarly journals Carrier dynamics in highly excited TlInS2: evidence of 2D electron–hole charge separation at parallel layers

2019 ◽  
Vol 21 (4) ◽  
pp. 2102-2114
Author(s):  
Vytautas Grivickas ◽  
Patrik Ščajev ◽  
Vitalijus Bikbajevas ◽  
Olga V. Korolik ◽  
Alexander V. Mazanik
Keyword(s):  
Charge Separation ◽  
Carrier Dynamics ◽  
Crystal Phase ◽  
Transient Grating ◽  
Electron Hole ◽  
Hole Charge

Imprinted transient grating fringes in TlInS2 are attributed to new crystal phase formed by 2D electron–hole charge separation on local layers.

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