Wear and oxidation behavior of reactive sputtered δ-(Ti,Mo)N films deposited at different nitrogen gas flow rates

2015 ◽  
Vol 87 ◽  
pp. 32-39 ◽  
Author(s):  
S. Komiyama ◽  
Y. Sutou ◽  
K. Oikawa ◽  
J. Koike ◽  
M. Wang ◽  
...  
2018 ◽  
Vol 922 ◽  
pp. 92-97 ◽  
Author(s):  
Sotaro Baba ◽  
Tomoyo Goto ◽  
Sung Hun Cho ◽  
Tohru Sekino

The effect of nitrogen gas flow rate on the morphology of silicon nitride fibers obtained via carbothermal nitridation heat treatment method was investigated. A precursor containing silicon, oxygen and carbon was obtained by a sol-gel method from a mixture of tetraethyl orthosilicate, polyvinyl alcohol, H2O and ethanol. A white wool-like product was obtained by heat treating the precursor placed in an alumina crucible under a 0.5 MPa nitrogen gas pressure at 1500oC with different nitrogen gas flow rates. The mass-based production rates of the samples obtained from the precursor powder were 20-30% for the different nitrogen gas flow rates. X-ray diffraction analysis revealed that the samples contained α-Si3N4 as the major phase along with β-Si3N4, Si2N2O and a small amount of amorphous product as minor phases. Unique twisted fibers with diameters of several hundreds of nanometers were found among the straight fibers by SEM observation. Elemental analysis using energy dispersive X-ray spectroscopy indicated that silicon and nitrogen were contained in the twisted fibers along with approximately 68 at.% of oxygen and several at.% of aluminum, which might have come from the crucible material. The SiAlON-like structures might have been formed by the partial dissolution of Al and O in the Si3N4 fibers. It was considered that the twisted morphology of some fibers might be formed by co-existing of β-SiAlON and/or amorphous phase regions in the Si3N4 fiber and resultant distortion of the fibers.


2020 ◽  
Vol 1004 ◽  
pp. 51-56
Author(s):  
Tai Hee Eun ◽  
Im Gyu Yeo ◽  
Jang Yul Kim ◽  
Seung Seok Lee ◽  
Han Suk Seo ◽  
...  

We investigated the relation between the nucleation of dislocations and the lattice misfits by nitrogen concentration difference between seed and grown crystal during the initial stage of growth. 4H-SiC single crystals were grown with various nitrogen gas flow rates introduced into the crystal growing chamber under the same temperature and pressure to minimize the effect of thermal stress on the nucleation of dislocations. The nitrogen atomic concentrations of grown crystals depended on the introduced nitrogen gas ratios and they highly increased at the very early stage of growth. The generation of new threading dislocations at the interface also was affected by the nitrogen atomic concentrations differences between seed and grown crystals. Very few generated threading dislocations were observed in low nitrogen atomic concentration samples, however nucleation of threading dislocations at the interface were found in high nitrogen atomic concentrations samples. At initial stages of PVT growth process, the generation of threading dislocations induced by lattice misfits originated from nitrogen concentration difference between seed and grown crystals were investigated and found the appropriate nitrogen gas flow rates and profile at the heating and depressurized stage.


Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1099 ◽  
Author(s):  
Song-Yi Ahn ◽  
Kyung Park ◽  
Daehwan Choi ◽  
Jozeph Park ◽  
Yong Joo Kim ◽  
...  

In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide.


2008 ◽  
Vol 8 (5) ◽  
pp. 2540-2543 ◽  
Author(s):  
S. M. Kang ◽  
S. G. Yoon ◽  
S.-W. Kim ◽  
D. H. Yoon

Amorphous Si (a-Si) quantum dots (QDs) embedded in a silicon nitride film were prepared by a plasma-enhanced chemical vapor deposition (PECVD) technique using gaseous mixtures of silane, hydrogen and nitrogen. We observed that the Si QDs had an amorphous structure from the Raman spectroscopy measurement. The Fourier transform infrared (FTIR) spectra showed that the relative transmittance of the SiH bands decreased, but that of the NH bands increased, with increasing nitrogen flow rate. During the deposition of SiNx, the number of dangling bonds of silicon acting as nucleation sites increased. As the hydrogen flow rate increased the growth rate decreased, due to the reduction in the hydrogen partial pressure. The hydrogen and nitrogen gas flow rates were found to be important parameters for determining the size of the a-Si QDs. In addition, we observed that the PL peak shifted toward a higher energy with increasing hydrogen and nitrogen gas flow rates, which was attributed to the increase in the quantum confinement effect in the a-Si QDs.


2011 ◽  
Vol 39 (6) ◽  
pp. 1103-1110 ◽  
Author(s):  
J. E. Ritchie ◽  
A. B. Williams ◽  
C. Gerard ◽  
H. Hockey

In this study, we evaluated the performance of a humidified nasal high-flow system (Optiflow™, Fisher and Paykel Healthcare) by measuring delivered FiO2 and airway pressures. Oxygraphy, capnography and measurement of airway pressures were performed through a hypopharyngeal catheter in healthy volunteers receiving Optiflow™ humidified nasal high flow therapy at rest and with exercise. The study was conducted in a non-clinical experimental setting. Ten healthy volunteers completed the study after giving informed written consent. Participants received a delivered oxygen fraction of 0.60 with gas flow rates of 10, 20, 30, 40 and 50 l/minute in random order. FiO2, FEO2, FECO2 and airway pressures were measured. Calculation of FiO2 from FEO2 and FECO2 was later performed. Calculated FiO2 approached 0.60 as gas flow rates increased above 30 l/minute during nose breathing at rest. High peak inspiratory flow rates with exercise were associated with increased air entrainment. Hypopharyngeal pressure increased with increasing delivered gas flow rate. At 50 l/minute the system delivered a mean airway pressure of up to 7.1 cmH2O. We believe that the high gas flow rates delivered by this system enable an accurate inspired oxygen fraction to be delivered. The positive mean airway pressure created by the high flow increases the efficacy of this system and may serve as a bridge to formal positive pressure systems.


Author(s):  
Z. Insepov ◽  
R. J. Miller

Propagation of Rayleigh traveling waves from a gas on a nanotube surface activates a macroscopic flow of the gas (or gases) that depends critically on the atomic mass of the gas. Our molecular dynamics simulations show that the surface waves are capable of actuating significant macroscopic flows of atomic and molecular hydrogen, helium, and a mixture of both gases both inside and outside carbon nanotubes (CNT). In addition, our simulations predict a new “nanoseparation” effect when a nanotube is filled with a mixture of two gases with different masses or placed inside a volume filled with a mixture of several gases with different masses. The mass selectivity of the nanopumping can be used to develop a highly selective filter for various gases. Gas flow rates, pumping, and separation efficiencies were calculated at various wave frequencies and phase velocities of the surface waves. The nanopumping effect was analyzed for its applicability to actuate nanofluids into fuel cells through carbon nanotubes.


1974 ◽  
Vol 14 (01) ◽  
pp. 44-54 ◽  
Author(s):  
Gary W. Rosenwald ◽  
Don W. Green

Abstract This paper presents a mathematical modeling procedure for determining the optimum locations of procedure for determining the optimum locations of wells in an underground reservoir. It is assumed that there is a specified production-demand vs time relationship for the reservoir under study. Several possible sites for new wells are also designated. possible sites for new wells are also designated. The well optimization technique will then select, from among those wellsites available, the locations of a specified number of wells and determine the proper sequencing of flow rates from Those wells so proper sequencing of flow rates from Those wells so that the difference between the production-demand curve and the flow curve actually attained is minimized. The method uses a branch-and-bound mixed-integer program (BBMIP) in conjunction with a mathematical reservoir model. The calculation with the BBMIP is dependent upon the application of superposition to the results from the mathematical reservoir model.This technique is applied to two different types of reservoirs. In the first, it is used for locating wells in a hypothetical groundwater system, which is described by a linear mathematical model. The second application of the method is to a nonlinear problem, a gas storage reservoir. A single-phase problem, a gas storage reservoir. A single-phase gas reservoir mathematical model is used for this purpose. Because of the nonlinearity of gas flow, purpose. Because of the nonlinearity of gas flow, superposition is not strictly applicable and the technique is only approximate. Introduction For many years, members of the petroleum industry and those concerned with groundwater hydrology have been developing mathematical reservoir modeling techniques. Through multiple runs of a reservoir simulator, various production schemes or development possibilities may be evaluated and their relative merits may be considered; i.e., reservoir simulators can be used to "optimize" reservoir development and production. Formal optimization techniques offer potential savings in the time and costs of making reservoir calculations compared with the generally used trial-and-error approach and, under proper conditions, can assure that the calculations will lead to a true optimum.This work is an extension of the application of models to the optimization of reservoir development. Given a reservoir, a designated production demand for the reservoir, and a number of possible sites for wells, the problem is to determine which of those sites would be the best locations for a specified number of new wells so that the production-demand curve is met as closely as possible. Normally, fewer wells are to be drilled than there are sites available. Thus, the question is, given n possible locations, at which of those locations should n wells be drilled, where n is less than n? A second problem, that of determining the optimum relative problem, that of determining the optimum relative flow rates of present and future wells is also considered. The problem is attacked through the simultaneous use of a reservoir simulator and a mixed-integer programming technique.There have been several reported studies concerned with be use of mathematical models to select new wells in gas storage or producing fields. Generally, the approach has been to use a trial-and-error method in which different well locations are assumed. A mathematical model is applied to simulate reservoir behavior under the different postulated conditions, and then the alternatives are postulated conditions, and then the alternatives are compared. Methods that evaluate every potential site have also been considered.Henderson et al. used a trial-and-error procedure with a mathematical model to locate new wells in an existing gas storage reservoir. At the same time they searched for the operational stratagem that would yield the desired withdrawal rates. In the reservoir that they studied, they found that the best results were obtained by locating new wells in the low-deliverability parts of the reservoir, attempting to maximize the distance between wells, and turning the wells on in groups, with the low-delivery wells turned on first.Coats suggested a multiple trial method for determining well locations for a producing field. SPEJ P. 44


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