Conformational studies of self-organized regioregular poly(3-dodecylthiophene)s using non-contact atomic force microscopy in ultra high vacuum condition

2006 ◽  
Vol 499 (1-2) ◽  
pp. 168-173 ◽  
Author(s):  
Shukichi Tanaka ◽  
Benjamin Grévin ◽  
Patrice Rannou ◽  
Hitoshi Suzuki ◽  
Shinro Mashiko
Keyword(s):  
Atomic Force Microscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Conformational Studies ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
High Vacuum Condition ◽  
Regioregular Poly ◽  
Ultra High Vacuum Condition

Atomic-scale friction on diamond(111) studied by ultra-high vacuum atomic force microscopy

1997 ◽  
Vol 384 (1-3) ◽  
pp. L828-L835 ◽  
Author(s):  
R.J.A. van den Oetelaar ◽  
C.F.J. Flipse
Keyword(s):  
Atomic Force Microscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Atomic Scale ◽  
Force Microscopy ◽  
Atomic Force

Development of a Self-Excited Oscillator for SI-Traceable Measurements in Atomic Force Microscopy

2008 ◽  
Author(s):  
Gregory W. Vogl ◽  
Jon R. Pratt
Keyword(s):  
Atomic Force Microscopy ◽  
International System ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Force Microscopy ◽  
Atomic Force ◽  
Force Transducers ◽  
Analog Control ◽  
System Of Units ◽  
Excited Oscillator

A new self-excited micro-oscillator is proposed as a velocity reference that could aid the dissemination of nanonewton-level forces that are traceable to the International System of Units (SI). An analog control system is developed to keep the actuation side of the device oscillating sinusoidally with an amplitude that is fairly insensitive to the quality factor. Consequently, the device can be calibrated as a velocity reference in air and used in ultra-high vacuum with a velocity shift of less than one percent. Hence, the calibrated micro-oscillator could be used with electrostatic forces to calibrate cantilevers used for atomic force microscopy (AFM) as SI-traceable force transducers. Furthermore, the calibrated micro-oscillator could potentially be used as an AFM sensor to achieve atomic resolutions on par with those realized in frequency-modulation AFM (FM-AFM) with quartz tuning forks.

Atomic-Force Microscopy with piezoresistive cantilevers

1994 ◽  
Vol 52 ◽  
pp. 1064-1065
Author(s):  
M. Tortonese ◽  
F. J. Giessibl
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Tunneling ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Cantilever Deflection ◽  
Force Microscopy ◽  
Large Samples ◽  
Atomic Force ◽  
High Lateral Resolution ◽  
Piezoresistive Cantilevers

The atomic force microscope (AFM) works by measuring the deflection of a cantilever as it is scanned over a sample. A sharp tip at the end of the cantilever is responsible for the high lateral resolution achieved with the AFM. There are several ways to measure the deflection of the cantilever. The technique used to measure the deflection of the cantilever most often dictates the mechanical complexity and stability of the instrument. Electron tunneling, interferometry and capacitive sensors have been used successfully. The most common way to measure the cantilever deflection is by means of an optical deflection detector.The piezoresistivc cantilever offers a new way to measure the deflection of the cantilever, with performances comparable to the performances of other deflection detectors, and with the advantage that the sensor is incorporated in the cantilever. This simplifies the design and operation of the microscope In particular, the piezoresistive cantilever facilitates the use and often improves the performances of an AFM when operated in ultra high vacuum (UHV), at low temperature, or when used to image large samples.

scholarly journals Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe

2012 ◽  
Vol 3 ◽  
pp. 25-32 ◽  
Author(s):  
Adam Sweetman ◽  
Sam Jarvis ◽  
Rosanna Danza ◽  
Philip Moriarty
Keyword(s):  
Atomic Force Microscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Dissipated Energy ◽  
Tunnel Current ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Characteristic Imaging

Background: Noncontact atomic force microscopy (NC-AFM) now regularly produces atomic-resolution images on a wide range of surfaces, and has demonstrated the capability for atomic manipulation solely using chemical forces. Nonetheless, the role of the tip apex in both imaging and manipulation remains poorly understood and is an active area of research both experimentally and theoretically. Recent work employing specially functionalised tips has provided additional impetus to elucidating the role of the tip apex in the observed contrast. Results: We present an analysis of the influence of the tip apex during imaging of the Si(100) substrate in ultra-high vacuum (UHV) at 5 K using a qPlus sensor for noncontact atomic force microscopy (NC-AFM). Data demonstrating stable imaging with a range of tip apexes, each with a characteristic imaging signature, have been acquired. By imaging at close to zero applied bias we eliminate the influence of tunnel current on the force between tip and surface, and also the tunnel-current-induced excitation of silicon dimers, which is a key issue in scanning probe studies of Si(100). Conclusion: A wide range of novel imaging mechanisms are demonstrated on the Si(100) surface, which can only be explained by variations in the precise structural configuration at the apex of the tip. Such images provide a valuable resource for theoreticians working on the development of realistic tip structures for NC-AFM simulations. Force spectroscopy measurements show that the tip termination critically affects both the short-range force and dissipated energy.

Nonlinear Multi-Mode Dynamics of a Microbeam for Noncontact Atomic Force Microscopy in Ultra-High Vacuum

2005 ◽  
Author(s):  
W. Wu ◽  
S. Pragai ◽  
O. Gottlieb
Keyword(s):  
Atomic Force Microscopy ◽  
High Vacuum ◽  
Closed Form Solution ◽  
Form Solution ◽  
Ultra High Vacuum ◽  
Atomic Interaction ◽  
Internal Resonances ◽  
Force Microscopy ◽  
Atomic Force ◽  
Multi Mode

We study the nonlinear multi-mode dynamics of a microbeam for noncontact atomic force microscopy in ultra-high vacuum. A boundary-value problem that includes a coupled linear thermo- and viscoelastic field with a localized nonlinear atomic interaction force, augmented by the linearized heat equation, is reduced to a modal dynamical system via Galerkin’s method. An equivalent linear thermoelastic quality factor is obtained and compared with a closed form solution. A numerically obtained escape curve defines valid operating parameters for low damping conditions. Primary, secondary and coupled internal resonances of a three-mode system are examined to reveal a rich bifurcation structure.

Ultra-High-Vacuum Atomic Force Microscopy in the Study of Model Catalysts

1995 ◽  
pp. 531-536
Author(s):  
A. Partridge ◽  
S. L. G. Toussaint ◽  
C. F. J. Flipse ◽  
E. W. Kuipers
Keyword(s):  
Atomic Force Microscopy ◽  
High Vacuum ◽  
Model Catalysts ◽  
Ultra High Vacuum ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Elucidating the charge state of an Au nanocluster on the oxidized/reduced rutile TiO2 (110) surface using non-contact atomic force microscopy and Kelvin probe force microscopy

2020 ◽  
Vol 2 (6) ◽  
pp. 2371-2375 ◽  
Author(s):  
Yuuki Adachi ◽  
Huan Fei Wen ◽  
Quanzhen Zhang ◽  
Masato Miyazaki ◽  
Yasuhiro Sugawara ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Charge State ◽  
High Vacuum ◽  
Kelvin Probe Force Microscopy ◽  
Ultra High Vacuum ◽  
Kelvin Probe ◽  
Au Nanoclusters ◽  
Rutile Tio2 ◽  
Force Microscopy ◽  
Atomic Force

The charge state of Au nanoclusters on oxidized/reduced rutile TiO2 (110) surfaces were investigated by a combination of non-contact atomic force microscopy and Kelvin probe force microscopy at 78 K under ultra-high vacuum.

High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopy

1999 ◽  
Vol 75 (2) ◽  
pp. 286-288 ◽  
Author(s):  
Ch. Sommerhalter ◽  
Th. W. Matthes ◽  
Th. Glatzel ◽  
A. Jäger-Waldau ◽  
M. Ch. Lux-Steiner
Keyword(s):  
Atomic Force Microscopy ◽  
High Vacuum ◽  
High Sensitivity ◽  
Ultra High Vacuum ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Length-extension resonator as a force sensor for high-resolution frequency-modulation atomic force microscopy in air

2016 ◽  
Vol 7 ◽  
pp. 432-438 ◽  
Author(s):  
Hannes Beyer ◽  
Tino Wagner ◽  
Andreas Stemmer
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
Frequency Modulation ◽  
High Vacuum ◽  
Force Sensor ◽  
Ultra High Vacuum ◽  
Dew Point ◽  
Ambient Conditions ◽  
Force Microscopy ◽  
Atomic Force

Frequency-modulation atomic force microscopy has turned into a well-established method to obtain atomic resolution on flat surfaces, but is often limited to ultra-high vacuum conditions and cryogenic temperatures. Measurements under ambient conditions are influenced by variations of the dew point and thin water layers present on practically every surface, complicating stable imaging with high resolution. We demonstrate high-resolution imaging in air using a length-extension resonator operating at small amplitudes. An additional slow feedback compensates for changes in the free resonance frequency, allowing stable imaging over a long period of time with changing environmental conditions.

Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: A nanoscale conductive-Atomic Force Microscopy C-AFM

2008 ◽  
Vol 1108 ◽  
Author(s):  
Hasan Javed Uppal ◽  
Vladimir Markevich ◽  
Stergios N Volkos ◽  
Athanasios Dimoulas ◽  
Bruce Hamilton ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Vacuum ◽  
Charge Trapping ◽  
Ultra High Vacuum ◽  
Systematic Observation ◽  
Gate Stacks ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Stress

AbstractConductive atomic force microscopy (C–AFM) in ultra high vacuum (UHV) has been used to characterize charge trapping in ultrathin as–deposited oxide films of 2–4 nm (HfO2)x(SiO2)1-x/SiO2 multilayer gate stacks. Pre– and post–stress/breakdown (BD) dielectric degradation is analyzed on a nanoscale. A systematic observation probes stress induced trap generation facilitating physical stack BD. Degradation is considered in terms of the pronounced localized leakage contribution through the high–κ and interlayer SiOx. Simultaneous nanoscale current–voltage (I-V) characteristics and C–AFM imaging illlutrates charge trapping/decay from the native or stress induced traps with intrinsic charge lateral propagation. A post–stress/BD constant voltage imaging shows effects of stress bias polarity on the BD induced topography and trap assisted nano–current variations. Physical attributes of deformed artifacts relate strongly to the polarity of electron injection (gate or substrate) so discriminating the trap generation in high–κ and interlayer SiOx revealing non–homogeneous (dynamic) nature of leakage.

Sign in / Sign up

Export Citation Format

Share Document