Instability of threshold voltage under constant bias stress in pentacene thin film transistors employing polyvinylphenol gate dielectric

2008 ◽  
Vol 516 (6) ◽  
pp. 1232-1236 ◽  
Author(s):  
Tae Ho Kim ◽  
Chang Gi Han ◽  
Chung Kun Song
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Bias Stress ◽  
Constant Bias

Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric

2016 ◽  
Vol 108 (3) ◽  
pp. 033502 ◽  
Author(s):  
Yu-Hong Chang ◽  
Ming-Jiue Yu ◽  
Ruei-Ping Lin ◽  
Chih-Pin Hsu ◽  
Tuo-Hung Hou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Positive Bias ◽  
Bias Stress ◽  
Al2o3 Gate Dielectric

Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Bias Stress

1990 ◽  
Vol 192 ◽  
Author(s):  
Tetsu Ogawa ◽  
Sadayoshi Hotta ◽  
Horoyoshi Takezawa
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
The Other ◽  
Time Dependent ◽  
Silicon Thin Film ◽  
Bias Stress

ABSTRACTThrough the time and temperature dependence measurements on threshold voltage shifts (Δ VT) in amorphous silicon thin film transistors, it has been found that two separate instability mechanisms exist; within short stress time ranges Δ Vτ increases as log t and this behavior corresponds to charge trapping in SiN. On the other hand, in long stress time ranges Δ VT increases as t t/4 and can be explained by time-dependent creation of trap in a-Si.

scholarly journals Optimizing the Properties of InGaZnOx Thin Film Transistors by Adjusting the Adsorbed Degree of Cs+ Ions

Materials ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2300
Author(s):  
He Zhang ◽  
Yaogong Wang ◽  
Ruozheng Wang ◽  
Xiaoning Zhang ◽  
Chunliang Liu
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Oxygen Vacancies ◽  
Immersion Method ◽  
Bias Stress ◽  
Cs Ions ◽  
Transfer Properties ◽  
Igzo Tft

To improve the performance of amorphous InGaZnOx (a-IGZO) thin film transistors (TFTs), in this thesis, Cs+ ions adsorbed IGZO (Cs-IGZO) films were prepared through a solution immersion method at low temperature. Under the modification of surface structure and oxygen vacancies concentrations of a-IGZO film, with the effective introduction of Cs+ ions into the surface of a-IGZO films, the transfer properties and stability of a-IGZO TFTs are greatly improved. Different parameters of Cs+ ion concentrations were investigated in our work. When the Cs+ ions concentration reached 2% mol/L, the optimized performance Cs-IGZO TFT was obtained, showing the carrier mobility of 18.7 cm2 V−1 s−1, the OFF current of 0.8 × 10−10 A, and the threshold voltage of 0.2 V, accompanied by the threshold voltage shifts of 1.3 V under positive bias stress for 5000 s.

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