High quality plasma enhanced chemical vapour deposited silicon oxide gas barrier coatings on polyester films

2008 ◽  
Vol 516 (10) ◽  
pp. 3081-3088 ◽  
Author(s):  
D.G. Howells ◽  
B.M. Henry ◽  
J. Madocks ◽  
H.E. Assender
Keyword(s):  
Silicon Oxide ◽  
Chemical Vapour ◽  
High Quality ◽  
Gas Barrier ◽  
Barrier Coatings

Molecular beam deposition of high quality silicon oxide dielectric films

1995 ◽  
Vol 148 (4) ◽  
pp. 336-344 ◽  
Author(s):  
Naresh Chand ◽  
J.E. Johnson ◽  
J.W. Osenbach ◽  
W.C. Liang ◽  
L.C. Feldman ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Silicon Oxide ◽  
Dielectric Films ◽  
High Quality ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Polymerization from the vapor phase. I. Poly(p-phenyleneterephthalamide) gas barrier coatings

1980 ◽  
Vol 25 (7) ◽  
pp. 1391-1405 ◽  
Author(s):  
R. M. Ikeda ◽  
R. J. Angelo ◽  
F. P. Boettcher ◽  
R. N. Blomberg ◽  
M. R. Samuels
Keyword(s):  
Phase I ◽  
Vapor Phase ◽  
Gas Barrier ◽  
Barrier Coatings

scholarly journals Low-temperature and ammonia-free epitaxy of GaN/AlGaN/GaN heterostructure

2021 ◽  
Author(s):  
David Maria Tobaldi ◽  
Valentina Triminì ◽  
Arianna Cretì ◽  
Mauro Lomascolo ◽  
Stefano Dicorato ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Chemical Vapour ◽  
High Growth ◽  
Wide Band ◽  
Cost Effective ◽  
Organic Chemical ◽  
High Electron ◽  
High Quality ◽  
Lower Growth ◽  
Green Approach

Wide band gap semiconductors are very attractive because of their broad applications as electronics and optoelectronics materials − GaN-based materials being by far the most promising. For the production of such nitride-based optical and power devices, metal-organic chemical vapour deposition (MOCVD) is routinely used. However, this has disadvantages, such as the large consumption of ammonia gas, and the need for high growth temperature. To go beyond such a limit, in this study we successfully developed a remote plasma assisted MOCVD (RPA-MOCVD) approach for the epitaxial growth of high-quality GaN/AlGaN heterostructures on 4H-SiC substrates. Our RPA-MOCVD has the advantages of lower growth temperature (750 °C) compared to conventional MOCVD route, and the use of a remote N2/H2 plasma instead of ammonia for nitrides growth, generating in situ the NHx (x = 0−3) species needed for the growth. As assessed by structural, morphological, optical and electrical characterisation, the proposed strategy provides an overall cost-effective and green approach for high-quality GaN/AlGaN heteroepitaxy, suitable for high electron mobility transistors (HEMT) technology.

Can Thermal Barrier Coatings be Sealed by Metal-Organic Chemical Vapour Deposition of Silica and Alumina?

1995 ◽  
Vol 14 (2) ◽  
pp. 57-66 ◽  
Author(s):  
V.A.C. Haanappel, ◽  
J.B.Α. Scharenborg, ◽  
H.D. van Corbach, ◽  
T. Fransen, ◽  
P.J. Gellings,
Keyword(s):  
Thermal Barrier Coatings ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Thermal Barrier ◽  
Barrier Coatings ◽  
Metal Organic

Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

1990 ◽  
Vol 193-194 ◽  
pp. 595-609 ◽  
Author(s):  
S.V Nguyen ◽  
D Dobuzinsky ◽  
D Dopp ◽  
R Gleason ◽  
M Gibson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
High Quality

High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors

2015 ◽  
Vol 7 (25) ◽  
pp. 14011-14017 ◽  
Author(s):  
Felix Jaehnike ◽  
Duy Vu Pham ◽  
Ralf Anselmann ◽  
Claudia Bock ◽  
Ulrich Kunze
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
High Quality ◽  
Solution Processed

The role of the buffer gas in the ArF laser chemical vapour deposition of silicon oxide

1993 ◽  
Vol 230 (1) ◽  
pp. 35-38 ◽  
Author(s):  
P. González ◽  
J. Pou ◽  
D. Fernández ◽  
E. García ◽  
J. Serra ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Silicon Oxide ◽  
Chemical Vapour ◽  
Buffer Gas ◽  
Arf Laser
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