Comparison of dry etching of PMMA and polycarbonate in diffusion pump-based O2 capacitively coupled plasma and inductively coupled plasma

2010 ◽  
Vol 518 (22) ◽  
pp. 6465-6468 ◽  
Author(s):  
J.H. Park ◽  
S.H. Lee ◽  
K.H. Choi ◽  
H.S. Noh ◽  
J.W. Lee ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Capacitively Coupled ◽  
Inductively Coupled ◽  
Diffusion Pump ◽  
Capacitively Coupled Plasma

The electronic identity of inductive and capacitive plasmas

2008 ◽  
Vol 74 (2) ◽  
pp. 155-161 ◽  
Author(s):  
K. T. A. L. BURM
Keyword(s):  
Inductively Coupled Plasma ◽  
Optimal Operation ◽  
Identity Relation ◽  
Inductively Coupled Plasmas ◽  
Plasma Sources ◽  
Capacitively Coupled ◽  
Inductively Coupled ◽  
Capacitively Coupled Plasma ◽  
Coupled Plasmas ◽  
Operation Frequency

AbstractAn electronic identity relation, relating capacitively coupled plasma sources to corresponding inductively coupled plasma sources, has been derived, starting from the Maxwell relations for matter and the characteristics of a capacitor and of an inductor. Furthermore, the breakdown conditions for both capacitively coupled plasmas and for inductively coupled plasmas as well as their optimal operation frequency ranges are discussed.

Change of Hydrophobicity on Silicone Rubber Modified by CF4 Capacitively Coupled Plasma and Inductively Coupled Plasma

2008 ◽  
Vol 373-374 ◽  
pp. 350-353 ◽  
Author(s):  
S.H. Gao ◽  
Y. Liu ◽  
M.K. Lei ◽  
Li Shi Wen
Keyword(s):  
Contact Angle ◽  
Silicone Rubber ◽  
Inductively Coupled Plasma ◽  
Treatment Time ◽  
Static Contact Angle ◽  
Rf Plasma ◽  
Capacitively Coupled ◽  
Inductively Coupled ◽  
Static Contact ◽  
Capacitively Coupled Plasma

Silicone rubber (SIR) samples are exposed to CF4 capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) at radio frequency (RF) power of 60–200 W for a treatment time up to 20 min, respectively. Static contact angle is employed to estimate the change of hydrophobicity of the silicone rubber modified by the two coupled types of CF4 RF plasma. A milder enlargement of static contact angle of SIR samples modified by ICP treatment is observed compared with that by CCP treatment. The hydrophobicity of the modified SIR surface by CCP treatment increases to a maximum, and further decreases toward the hydropholicity. The higher self-bias on the SIR samples being modified by CCP treatment than that by ICP treatment leads to the more dramatic physical and/or chemical reaction on the SIR surface, resulting in the competition between fluorination and ablation or etching.

Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl4/Ar

1998 ◽  
Vol 37 (Part 1, No. 12A) ◽  
pp. 6655-6656 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Angled stripe InGaAsP/InP SLED fabricated by low-damage inductively coupled plasma dry etching

2004 ◽  
Author(s):  
Jun Zhang ◽  
Xiaodong Huang ◽  
Jin Chang ◽  
Yingjun Liu ◽  
Yi Gan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Dry Etching of TaN/HfO2Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

2005 ◽  
Vol 44 (7B) ◽  
pp. 5811-5818 ◽  
Author(s):  
Myoung Hun Shin ◽  
Sung-Woong Na ◽  
Nae-Eung Lee ◽  
Tae Kwan Oh ◽  
Jiyoung Kim ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled
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