The electronic identity of inductive and capacitive plasmas

2008 ◽  
Vol 74 (2) ◽  
pp. 155-161 ◽  
Author(s):  
K. T. A. L. BURM
Keyword(s):  
Inductively Coupled Plasma ◽  
Optimal Operation ◽  
Identity Relation ◽  
Inductively Coupled Plasmas ◽  
Plasma Sources ◽  
Capacitively Coupled ◽  
Inductively Coupled ◽  
Capacitively Coupled Plasma ◽  
Coupled Plasmas ◽  
Operation Frequency

AbstractAn electronic identity relation, relating capacitively coupled plasma sources to corresponding inductively coupled plasma sources, has been derived, starting from the Maxwell relations for matter and the characteristics of a capacitor and of an inductor. Furthermore, the breakdown conditions for both capacitively coupled plasmas and for inductively coupled plasmas as well as their optimal operation frequency ranges are discussed.

Observation of Atom and Ion Clouds Produced from Single Droplets of Sample in Inductively Coupled Plasmas by Optical Emission and Laser-Induced Fluorescence Imaging

1997 ◽  
Vol 51 (5) ◽  
pp. 607-616 ◽  
Author(s):  
John W. Olesik ◽  
Jeffery A. Kinzer ◽  
Garrett J. McGowan
Keyword(s):  
Inductively Coupled Plasma ◽  
Optical Emission ◽  
Laser Induced Fluorescence ◽  
Inductively Coupled Plasmas ◽  
Double Exposure ◽  
Charge Coupled Device ◽  
Inductively Coupled ◽  
Intensified Charge Coupled Device ◽  
Coupled Plasmas ◽  
Single Droplets

An instrument to obtain optical emission and laser-induced fluorescence images of atom or ion clouds, each produced from isolated, monodisperse droplets of sample in an inductively coupled plasma, is described. An excimer laser pumped dye laser is used to produce a large (28-mm × 24-mm) beam for saturated fluorescence from atoms or ions throughout a large portion of the ICP. An intensified charge-coupled device (ICCD) detects optical emission or laser induced fluorescence snapshot images at the focal plane of an aberration-corrected slitless spectrograph. Images produced from a single laser pulse can be detected. Double-exposure emission images with 1-μs gate times can be acquired to monitor the movement of atom or ion clouds produced from a single droplet of sample solution. Variations in the number of atoms or ions produced as a function of time (or height) in the plasma can be monitored. Excitation in the plasma can be assessed from ratios of emission to fluorescence intensities.

Mass Spectrometric Evidence for Suprathermal Ionization in an Inductively Coupled Argon Plasma

1981 ◽  
Vol 35 (4) ◽  
pp. 380-384 ◽  
Author(s):  
Robert S. Houk ◽  
Harry J. Svec ◽  
Velmer A. Fassel
Keyword(s):  
Inductively Coupled Plasma ◽  
Argon Plasma ◽  
Vacuum System ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Optical Spectrometry ◽  
Mass Spectrometric Evidence ◽  
Singly Charged ◽  
Coupled Plasmas ◽  
Charged Ions

Mass spectra have been obtained of species in the axial channel of an inductively coupled argon plasma by extracting ions from the inductively coupled plasma into a vacuum system housing a quadrupole mass spectrometer. Ionization temperatures ( Tion) are obtained from relative count rates of m/z-resolved ions according to two general types of ionization equilibrium considerations: (a) the ratio of doubly/singly charged ions of the same element, and (b) the ratio of singly charged ions from two elements of different ionization energy. The Tion values derived from measurement of Ar+2/Ar+, Ba+2/Ba+, Sr+2/Sr+, and Cd+/I+ are all greater than those expected from excitation temperatures measured by other workers. The latter three values for Tion are in reasonable agreement with values obtained by optical spectrometry for a variety of argon inductively coupled plasmas.

scholarly journals Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He

1999 ◽  
Vol 4 (S1) ◽  
pp. 763-768
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Strong Function ◽  
Inductively Coupled ◽  
Physical Sputtering ◽  
Etch Rates ◽  
Coupled Plasmas ◽  
Nitrogen Bond

The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AlN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AlN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AlN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AlN were obtained.

scholarly journals Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He

1998 ◽  
Vol 537 ◽  
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Strong Function ◽  
Inductively Coupled ◽  
Physical Sputtering ◽  
Etch Rates ◽  
Coupled Plasmas ◽  
Nitrogen Bond

AbstractThe role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AIN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AIN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AIN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AIN were obtained.

Change of Hydrophobicity on Silicone Rubber Modified by CF4 Capacitively Coupled Plasma and Inductively Coupled Plasma

2008 ◽  
Vol 373-374 ◽  
pp. 350-353 ◽  
Author(s):  
S.H. Gao ◽  
Y. Liu ◽  
M.K. Lei ◽  
Li Shi Wen
Keyword(s):  
Contact Angle ◽  
Silicone Rubber ◽  
Inductively Coupled Plasma ◽  
Treatment Time ◽  
Static Contact Angle ◽  
Rf Plasma ◽  
Capacitively Coupled ◽  
Inductively Coupled ◽  
Static Contact ◽  
Capacitively Coupled Plasma

Silicone rubber (SIR) samples are exposed to CF4 capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) at radio frequency (RF) power of 60–200 W for a treatment time up to 20 min, respectively. Static contact angle is employed to estimate the change of hydrophobicity of the silicone rubber modified by the two coupled types of CF4 RF plasma. A milder enlargement of static contact angle of SIR samples modified by ICP treatment is observed compared with that by CCP treatment. The hydrophobicity of the modified SIR surface by CCP treatment increases to a maximum, and further decreases toward the hydropholicity. The higher self-bias on the SIR samples being modified by CCP treatment than that by ICP treatment leads to the more dramatic physical and/or chemical reaction on the SIR surface, resulting in the competition between fluorination and ablation or etching.

Influence of the Generator Frequency on the Spectral Characteristics of Inductively Coupled Plasma

1982 ◽  
Vol 36 (2) ◽  
pp. 102-106 ◽  
Author(s):  
B. Capelle ◽  
J. M. Mermet ◽  
J. Robin
Keyword(s):  
High Frequency ◽  
Inductively Coupled Plasma ◽  
Emission Spectroscopy ◽  
Spectral Characteristics ◽  
Inductively Coupled Plasmas ◽  
Electron Number ◽  
Inductively Coupled ◽  
Background Continuum ◽  
Coupled Plasmas ◽  
Generator Frequency

Different high-frequency generators have been studied in the 5 to 56 MHz range in order to observe the influence of frequency on spectral characteristics of inductively coupled plasmas used in emission spectroscopy. Higher frequencies tended to yield decreased excitation temperatures and electron number densities and therefore decreased line and background continuum intensities. Signal-to-noise ratios were improved ranging from 1 to 8 MHz going from 27 to 56 MHz with similar improvements in detection limits. Precision, working curve linearity, chemical interferences, and the ability to atomize high salt concentration samples were unaffected by frequency.

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