High-rate deposition and mechanical properties of SiOx film at low temperature by plasma enhanced chemical vapor deposition with the dual frequencies ultra high frequency and high frequency

2011 ◽  
Vol 519 (19) ◽  
pp. 6334-6338 ◽  
Author(s):  
Su B. Jin ◽  
Joon S. Lee ◽  
Yoon S. Choi ◽  
In S. Choi ◽  
Jeon G. Han
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
High Rate ◽  
Ultra High Frequency

High Rate Deposition of Silicon Dioxide Membrane by Excimer Laser Enhanced Projection Chemical Vapor Deposition from Organic Compounds at Low Temperature

1993 ◽  
Vol 32 (Part 1, No. 6B) ◽  
pp. 3109-3112 ◽  
Author(s):  
Seiichirou Tomoura ◽  
Kouji Takashima ◽  
Kazuyuki Minami ◽  
Masaki Esashi ◽  
Jun-ichi Nishizawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Organic Compounds ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Rate

scholarly journals Conformal MgO film grown at high rate at low temperature by forward-directed chemical vapor deposition

2018 ◽  
Vol 36 (5) ◽  
pp. 051504 ◽  
Author(s):  
Tushar K. Talukdar ◽  
Sumeng Liu ◽  
Zhejun Zhang ◽  
Frank Harwath ◽  
Gregory S. Girolami ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Rate

Mechanical Properties and Reliability of Amorphous vs. Polycrystalline Silicon Thin Films

2008 ◽  
Vol 1066 ◽  
Author(s):  
Joao Gaspar ◽  
Oliver Paul ◽  
Virginia Chu ◽  
Joao Pedro Conde
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Bulge Test ◽  
Material Strength

ABSTRACTThis paper presents the mechanical characterization of both elastic and fracture properties of thin silicon films from the load-deflection response of membranes, also known as the bulge test. Properties extracted include the plane-strain modulus, prestress, fracture strength and Weibull modulus. Diaphragms made of low-temperature, hydrogenated amorphous and nanocrystalline silicon films (a-Si:H and nc-Si:H, respectively) deposited by plasma enhanced chemical vapor deposition (PECVD) and, for comparison, membranes composed of high-temperature polycrystalline silicon (poly-Si) deposited by low pressure chemical vapor deposition (LPCVD) have been fabricated and characterized. The structures are bulged until failure occurs. From the stress profiles in the diaphragms at fracture, the brittle material strength is analyzed using Weibull statistics. The bulge setup is fully automated for the sequential measurement of several membranes on a substrate realizing the high-throughput acquisition of data under well controlled conditions. A comprehensive study of the mechanical properties of low-temperature silicon films as a function of deposition parameters, namely substrate temperature, RF power, hydrogen dilution and doping, is presented.

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