Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization

2013 ◽  
Vol 546 ◽  
pp. 2-8 ◽  
Author(s):  
Seungmin Yeo ◽  
Sang-Hyeok Choi ◽  
Ji-Yoon Park ◽  
Soo-Hyun Kim ◽  
Taehoon Cheon ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Copper Metallization ◽  
Layer Deposition

scholarly journals Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

2019 ◽  
Vol 6 (10) ◽  
pp. 1900097 ◽  
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
Ioannis Deretzis ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Layer Deposition ◽  
Highly Uniform ◽  
Seed Layer Free

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

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