Effect of heating rate and precursor composition on secondary phase formation during Cu2ZnSnS4 thin film growth and its properties

2021 ◽  
pp. 139029
Author(s):  
Sagar Agrawal ◽  
Balasubramanian C ◽  
Subroto Mukherjee ◽  
Rinkal Kanani ◽  
Kishore K. Madapu ◽  
...  
Keyword(s):  
Thin Film ◽  
Heating Rate ◽  
Phase Formation ◽  
Film Growth ◽  
Secondary Phase ◽  
Thin Film Growth ◽  
Secondary Phase Formation ◽  
Cu2znsns4 Thin Film ◽  
Precursor Composition

Control of secondary phase segregations during CuGaSe2 thin-film growth

2002 ◽  
Vol 20 (4) ◽  
pp. 1247-1253 ◽  
Author(s):  
M. R. Balboul ◽  
U. Rau ◽  
G. Bilger ◽  
M. Schmidt ◽  
H. W. Schock ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Secondary Phase ◽  
Thin Film Growth

scholarly journals Thin film growth of heavy fermion chiral magnet YbNi3Al9

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Heavy Fermion ◽  
Film Growth ◽  
Thin Film Growth

Radical-triggered cross-linking for molecular layer deposition of SiAlCOH hybrid thin films

2021 ◽  
Author(s):  
Kristina Ashurbekova ◽  
Karina Ashurbekova ◽  
Iva Saric ◽  
Evgeny Modin ◽  
Mladen Petravic ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Molecular Layer ◽  
Thin Film Growth ◽  
Cross Linking ◽  
Layer By Layer ◽  
Molecular Layer Deposition ◽  
Layer Deposition ◽  
Hybrid Thin Films ◽  
Enhanced Stability

We developed a thin film growth with a radical-initiated cross-linking of vinyl groups in a layer-by-layer manner via molecular layer deposition (MLD). The cross-linked film exhibited improved properties like 12% higher density and enhanced stability compared to the non-cross-linked film.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth
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