Chemical sputtering and surface damage of graphite by low-energy atomic and molecular hydrogen and deuterium projectiles

Vacuum ◽  
2008 ◽  
Vol 82 (9) ◽  
pp. 880-887 ◽  
Author(s):  
F.W. Meyer ◽  
H. Zhang ◽  
M.J. Lance ◽  
H.F. Krause
Keyword(s):  
Molecular Hydrogen ◽  
Surface Damage ◽  
Low Energy ◽  
Chemical Sputtering

scholarly journals Low-energy electron scattering from molecular hydrogen: Excitation of the X1Σg+ to b3Σu+ transition

2018 ◽  
Vol 98 (6) ◽  
Author(s):  
M. Zawadzki ◽  
R. Wright ◽  
G. Dolmat ◽  
M. F. Martin ◽  
B. Diaz ◽  
...  
Keyword(s):  
Electron Scattering ◽  
Molecular Hydrogen ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron

Surface damage in ultrafine and multimodal grained tungsten materials induced by low energy helium irradiation

2013 ◽  
Vol 434 (1-3) ◽  
pp. 170-177 ◽  
Author(s):  
Osman El-Atwani ◽  
Mert Efe ◽  
Bryan Heim ◽  
Jean Paul Allain
Keyword(s):  
Surface Damage ◽  
Low Energy

scholarly journals Layer-by-Layer Pyramid Formation from Low-Energy Ar+ Bombardment and Annealing of Ge (110)

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2521
Author(s):  
Marshall van Zijll ◽  
Samantha S. Spangler ◽  
Andrew R. Kim ◽  
Hazel R. Betz ◽  
Shirley Chiang
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Surface Damage ◽  
Low Energy ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
Sample Holder ◽  
Tunneling Microscopy ◽  
Ion Energies ◽  
20 Nm

Isolated pyramids, 30–80 nm wide and 3–20 nm tall, form during sputter-annealing cycles on the Ge (110) surface. Pyramids have four walls with {19 13 1} faceting and a steep mound at the apex. We used scanning tunneling microscopy (STM) under ultrahigh vacuum conditions to periodically image the surface at ion energies between 100 eV and 500 eV and incremental total flux. Pyramids are seen using Ar+ between 200 eV and 400 eV, and require Ag to be present on the sample or sample holder. We suspect that the pyramids are initiated by Ag co-sputtered onto the surface. Growth of pyramids is due to the gathering of step edges with (16 × 2) reconstruction around the pyramid base during layer-by-layer removal of the substrate, and conversion to {19 13 1} faceting. The absence of pyramids using Ar+ energies above 400 eV is likely due to surface damage that is insufficiently annealed.

Temperature Dependence of Surface Morphology of Silicon Grown on CaF2/Si by Electron Beam Assisted Mbe

1994 ◽  
Vol 367 ◽  
Author(s):  
P.O. Pettersson ◽  
R.J. Miles ◽  
T.C. Mcgill
Keyword(s):  
Surface Roughness ◽  
Electron Beam ◽  
Photoelectron Spectroscopy ◽  
Silicon Layer ◽  
Surface Damage ◽  
Low Energy ◽  
Growth Mode ◽  
Optimal Range ◽  
Low Energy Electrons ◽  
Ordered Array

AbstractWe present the results of electron beam assisted molecular beam epitaxy (EB-MBE) on the growth mode of silicon on CaF2/Si(111). By irradiating the CaF2 surface with low energy electrons, the fluorine is desorbed, leaving an ordered array of F-centers behind. Using atomic force microscopy (AFM), we do not detect any surface damage on the CaF2 layer due to the low energy electron irradiation. The surface free energy of the CaF2 is raised due to the F-center array and the subsequent silicon layer is smoother. Using AFM and X-ray photoelectron spectroscopy (XPS), we find an optimal range of exposures for high temperature (650°C) growth of the silicon overlayer that minimizes surface roughness of the silicon overlayer and we present a simple model based on geometrical thermodynamics to explain this.We observed a similar optimal range of exposures that minimizes the surface roughness for medium (575°C) and low (500°C) growth temperatures of the silicon layer. We present an explanation for this growth mode based on kinetics.

Elastic Scattering of Low‐Energy Electrons from Molecular Hydrogen

1967 ◽  
Vol 47 (9) ◽  
pp. 3532-3539 ◽  
Author(s):  
Roger L. Wilkins ◽  
Howard S. Taylor
Keyword(s):  
Elastic Scattering ◽  
Molecular Hydrogen ◽  
Low Energy ◽  
Low Energy Electrons

scholarly journals Highly Excited Molecular Hydrogen in Orion

1989 ◽  
Vol 120 ◽  
pp. 323-326
Author(s):  
Hans H. Hippelein ◽  
Guido Münch
Keyword(s):  
Molecular Hydrogen ◽  
Rotational Temperature ◽  
Energy State ◽  
Low Energy ◽  
Line Of Sight ◽  
Temperature Measuring ◽  
Molecule Formation ◽  
J 13 ◽  
Excitation Mechanisms

Observations of H2 lines in the IR have been mostly restricted to those with upper levels of low energy, which can be excited either collisionally in shocks or radiatively by UV starlight. In order to discriminate between the two excitation mechanisms we have measured in 11 μm range lines of the v=2-0 band arising from high rotational levels J≤;13. Their intensities, together with those of the IR lines, allow an estimate of the line of sight effective extinction and a determination of the rotational temperature measuring their joint degree of excitation. The latter parameter provides information about the energy state of the molecules at their formation and ejection from grain surfaces and thus constrains the hypothetical models for H2 molecule formation.

Low-energy Ion Scattering Measurement of Near-surface Damage Induced by the SiO2Dry-Etching Process

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 2043-2050 ◽  
Author(s):  
Miyako Matsui ◽  
Fumihiko Uchida ◽  
Kiyomi Katsuyama ◽  
Takafumi Tokunaga ◽  
Masayuki Kojima
Keyword(s):  
Surface Damage ◽  
Low Energy ◽  
Etching Process ◽  
Ion Scattering ◽  
Near Surface ◽  
Low Energy Ion Scattering ◽  
Scattering Measurement

Deep surface damage of SiO2 by sputtering with low energy Ar-ions

1989 ◽  
Vol 218 (2-3) ◽  
pp. L497-L504 ◽  
Author(s):  
E Collart ◽  
R.J Visser
Keyword(s):  
Surface Damage ◽  
Low Energy ◽  
Deep Surface
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