Effect of oxygen concentration and system geometry on the current–voltage relations during reactive sputter deposition of titanium dioxide thin films

Vacuum ◽  
2011 ◽  
Vol 85 (11) ◽  
pp. 1042-1046 ◽  
Author(s):  
J.C. Sagás ◽  
D.A. Duarte ◽  
S.F. Fissmer
2012 ◽  
Vol 463-464 ◽  
pp. 1415-1419 ◽  
Author(s):  
P. Pungboon Pansila ◽  
Nirun Witit-Anun ◽  
Tongsai Jamnongkan ◽  
Surasing Chaiyakun

Titanium dioxide thin films were deposited by DC reactive magnetron sputtering on silicon wafer and glass slide at sputtering power of 210 watt under total pressure of 5.0×10-3 mbar at different oxygen partial pressure. A pure metallic titanium target was sputtered in a mixture of argon and oxygen gases. The crystal structure and surface morphology were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The optical transmission was measured by spectrophotometer. The results show that the crystalline was pure anatase structure titanium dioxide thin films. The surface morphology of the films is strongly the oxygen partial pressure. It was found that surface roughness of the thin films was around 2.42 to 4.82 nm and the thickness was around 72 to130 nm. In addition, it was found that all the titanium dioxide thin films were deposited by reactive sputtering with the different oxygen pressure exhibit the transparency property.


2003 ◽  
Vol 38 (9) ◽  
pp. 773-778 ◽  
Author(s):  
B. Karunagaran ◽  
R. T. Rajendra Kumar ◽  
C. Viswanathan ◽  
D. Mangalaraj ◽  
Sa. K. Narayandass ◽  
...  

2016 ◽  
Vol 16 (24) ◽  
pp. 8890-8896 ◽  
Author(s):  
Buse Comert ◽  
Nihan Akin ◽  
Meltem Donmez ◽  
Semran Saglam ◽  
Suleyman Ozcelik

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