Development of low-pressure high-frequency plasma chemical vapor deposition method on surface modification of silicon wafer

Vacuum ◽  
2014 ◽  
Vol 109 ◽  
pp. 166-169 ◽  
Author(s):  
Nuttee Thungsuk ◽  
Peerapong Nuchuay ◽  
Daisuke Hirotani ◽  
Yoshimi Okamura ◽  
Kenichi Nakabayashi ◽  
...  
Author(s):  
Nuttee Thungsuk ◽  
Toshifumi Yuji ◽  
Narong Mungkung ◽  
Yoshimi Okamura ◽  
Atsushi Fujimaru ◽  
...  

AbstractThe low-pressure high-frequency plasma chemical vapor deposition (CVD) system was developed with non-thermal plasma process to study the Polyethylene naphthalate (PEN) surface characteristics. Plasma surface treatment by oxygen can improve the adhesive properties. A mixture of Ar and O


2015 ◽  
Vol 749 ◽  
pp. 121-125
Author(s):  
Nuttee Thungsuk ◽  
Toshifumi Yuji ◽  
Nat Kasayapan ◽  
Chirapas Mahawan ◽  
Somchai Arunrungrusmi ◽  
...  

The flexible dye-sensitized solar cells have a need to improve adhesive property in each layer in order to increase efficiency of this solar cell. Flexible surface with Polyethylene naphthalate (PEN) were modified by using surface treatment from developed the low-pressure high-frequency Plasma Chemical Vapor Deposition system in order to improve adhesive characteristic. The oxygen plasma treatment can improve adhesive property of Polyethylene naphthalate (PEN) films and also cleaning surface. We were using the mixture of Ar and O2 gas for plasma treatment with oxygen gas flow rate from 0.1 L/min. to 0.5 L/min. while Ar gas flow rate was set at 10 L/min. and 5 minute for treatment time. The results indicate that using low-pressure high-frequency Plasma Chemical Vapor Deposition system can be possible improvement adhesive characteristic of PEN films with radical increased on films.


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