scholarly journals An upgraded ultra-high vacuum magnetron-sputtering system for high-versatility and software-controlled deposition

Vacuum ◽  
2021 ◽  
Vol 187 ◽  
pp. 110137 ◽  
Author(s):  
Arnaud le Febvrier ◽  
Ludvig Landälv ◽  
Thomas Liersch ◽  
David Sandmark ◽  
Per Sandström ◽  
...  
2001 ◽  
Vol 14 (12) ◽  
pp. 1144-1147 ◽  
Author(s):  
K Nakamura ◽  
H Akaike ◽  
Y Ninomiya ◽  
Y Tate ◽  
A Fujimaki ◽  
...  

2013 ◽  
Vol 21 (2) ◽  
Author(s):  
M. Mazur ◽  
D. Wojcieszak ◽  
J. Domaradzki ◽  
D. Kaczmarek ◽  
S. Song ◽  
...  

AbstractIn this paper designing, preparation and characterization of multifunctional coatings based on TiO2/SiO2 has been described. TiO2 was used as a high index material, whereas SiO2 was used as a low index material. Multilayers were deposited on microscope slide substrates by microwave assisted reactive magnetron sputtering process. Multilayer design was optimized for residual reflection of about 3% in visible spectrum (450–800 nm). As a top layer, TiO2 with a fixed thickness of 10 nm as a protective film was deposited. Based on transmittance and reflectance spectra, refractive indexes of TiO2 and SiO2 single layers were calculated. Ultra high vacuum atomic force microscope was used to characterize the surface properties of TiO2/SiO2 multilayer. Surface morphology revealed densely packed structure with grains of about 30 nm in size. Prepared samples were also investigated by nanoindentation to evaluate their protective performance against external hazards. Therefore, the hardness of the thin films was measured and it was equal to 9.34 GPa. Additionally, contact angle of prepared coatings has been measured to assess the wetting properties of the multilayer surface.


1999 ◽  
Vol 353 (1-2) ◽  
pp. 166-173 ◽  
Author(s):  
P. Sandström ◽  
E.B. Svedberg ◽  
M.P. Johansson ◽  
J. Birch ◽  
J.-E. Sundgren

2014 ◽  
Vol 1642 ◽  
Author(s):  
Atsuo Katagiri ◽  
Shota Ogawa ◽  
Takao Shimizu ◽  
Masaaki Matsushima ◽  
Kensuke Akiyama ◽  
...  

ABSTRACTA RF magnetron sputtering method was used to prepare Mg2Si films at 300-400oC on (001) Al2O3 substrates from a Mg disc target with Si chips. Mg deposition was not detected at 400°C from a pure Mg disc target without Si chips due to the high vapor pressure of Mg. However, the amount of Mg deposition increased with the increase in Si/(Mg+Si) area ratio of the target surface together with the increase of the Si deposition. The obtained films had a stoichiometric composition of Si/(Mg+Si)=0.33 that consisted of the well crystalline Mg2Si single phase regardless of Si/(Mg+Si) area ratio of the target surface. This showed the existence of a “process window” against supply ratio of Si/(Mg+Si) for Mg2Si single phase films with a stoichiometric composition. This is considered to be due to the vaporization of the excess Mg prepared under the Mg excess condition as reported by Mahan et al. for Mg2Si films prepared at 200°C by ultra-high vacuum evaporation.


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