scholarly journals High quality large-area graphene synthesis with high growth rate using plasma-enhanced CVD

Synthesiology ◽  
2016 ◽  
Vol 9 (3) ◽  
pp. 124-138 ◽  
Author(s):  
Masataka HASEGAWA ◽  
Kazuo TSUGAWA ◽  
Ryuichi KATO ◽  
Yoshinori KOGA ◽  
Masatou ISHIHARA ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Large Area ◽  
High Quality ◽  
Plasma Enhanced Cvd ◽  
Graphene Synthesis

scholarly journals High quality and large-area graphene synthesis with a high growth rate using plasma-enhanced CVD

2016 ◽  
Vol 9 (3) ◽  
pp. 124-138
Author(s):  
Masataka HASEGAWA ◽  
Kazuo TSUGAWA ◽  
Ryuichi KATO ◽  
Yoshinori KOGA ◽  
Masatou ISHIHARA ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Large Area ◽  
High Quality ◽  
Plasma Enhanced Cvd ◽  
Graphene Synthesis

Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet

2000 ◽  
Vol 9 (9-10) ◽  
pp. 1673-1677 ◽  
Author(s):  
H. Guo ◽  
Z.L. Sun ◽  
Q.Y. He ◽  
S.M. Du ◽  
X.B. Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Arc Plasma ◽  
Large Area ◽  
High Quality ◽  
Dc Arc

Investigation of homoepitaxial growth by microwave plasma CVD providing high growth rate and high quality of diamond simultaneously

2020 ◽  
Vol 22 ◽  
pp. 100816 ◽  
Author(s):  
A.L. Vikharev ◽  
M.A. Lobaev ◽  
A.M. Gorbachev ◽  
D.B. Radishev ◽  
V.A. Isaev ◽  
...  
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
High Growth ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Microwave Plasma Cvd

Development of 4H–SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity

2008 ◽  
Vol 1 (1) ◽  
pp. 015001 ◽  
Author(s):  
Masahiko Ito ◽  
Liutauras Storasta ◽  
Hidekazu Tsuchida
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
High Growth ◽  
High Growth Rate ◽  
Large Area ◽  
Growth Technique

Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity

2008 ◽  
Vol 600-603 ◽  
pp. 111-114 ◽  
Author(s):  
Masahiko Ito ◽  
L. Storasta ◽  
Hidekazu Tsuchida
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Free Exciton ◽  
High Growth ◽  
Maximum Growth ◽  
High Growth Rate ◽  
Maximum Growth Rate ◽  
High Rate ◽  
Intrinsic Defect ◽  
Large Area

A vertical hot-wall type epi-reactor that makes it possible to simultaneously achieve both a high rate of epitaxial growth and large-area uniformity at the same time has been developed. A maximum growth rate of 250 µm/h is achieved at 1650 °C. Thickness uniformity of 1.1 % and doping uniformity of 6.7 % for a 65 mm radius area are achieved while maintaining a high growth rate of 79 µm/h. We also succeeded in growing a 280 µm-thick epilayer with excellent surface morphology and long carrier lifetime of ~1 µs on average. The LTPL spectrum shows free exciton peaks as dominant, and few impurity-related or intrinsic defect related peaks are observed. The DLTS measurement for an epilayer grown at 80 µm/h shows low trap concentrations of 1.2×1012 cm-3 for Z1/2 center and 6.3×1011 cm-3 for EH6/7 center, respectively.

Multi-linear antenna microwave plasma assisted large-area growth of 6 × 6 in.2 vertically oriented graphenes with high growth rate

2020 ◽  
Vol 91 (7) ◽  
pp. 076105
Author(s):  
Zheng Bo ◽  
Mengxiang Su ◽  
Huachao Yang ◽  
Shiling Yang ◽  
Jianhua Yan ◽  
...  
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
High Growth ◽  
High Growth Rate ◽  
Linear Antenna ◽  
Large Area ◽  
Area Growth

Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer

2019 ◽  
Vol 125 ◽  
pp. 343-347 ◽  
Author(s):  
Hualong Wu ◽  
Wei Zhao ◽  
Chenguang He ◽  
Kang Zhang ◽  
Longfei He ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Medium Temperature

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

2015 ◽  
Vol 821-823 ◽  
pp. 133-136 ◽  
Author(s):  
Takanori Tanaka ◽  
Naoyuki Kawabata ◽  
Yoichiro Mitani ◽  
Masashi Sakai ◽  
Nobuyuki Tomita ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Throughput ◽  
Defect Density ◽  
High Growth ◽  
High Growth Rate ◽  
Pressure Condition ◽  
High Quality ◽  
Growth Pressure ◽  
Hcl Gas

The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure condition in a horizontal CVD reactor without chloride-containing gas. The quality of a 30-μm-thick epilayer grown with 40 μm/h was also investigated. Downfall and triangle defect density in the layer was as low as 0.16 /cm2, indicating that a high quality epitaxial wafer can be easily obtained under the condition with high throughput in the sinple CVD system.

Nitrogen and Bias Effect on Homoepitaxial Diamond Growth by Hot-Filament Chemical Vapor Deposition

2010 ◽  
Vol 443 ◽  
pp. 510-515 ◽  
Author(s):  
Hung Yin Tsai ◽  
Chih Cheng Chang ◽  
Chih Wei Wu
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Hot Filament

The development of homoepitaxial films for advanced device applications has been studied, but high growth rate and diamond film quality have not yet been explored. In the current study, high quality homoepitaxial diamond films were grown on type Ib (100) HPHT synthetic diamond substrate by hot-filament chemical vapor deposition. The reactant gases were mixed by CH4 and H2 with small amounts of N2 (500 to 3000 ppm). Besides, a bias system was used to assist diamond film deposition. The pyramidal crystals on diamond surface can be suppressed and high quality diamond film of FWHM (Full Width at Half Maximum) = 10.76 cm-1 with high growth rate of 8.78 ± 0.2 μm/ hr was obtained at the condition of adding 1000 ppm nitrogen. At the bias voltage of -150 V, the pyramidal crystals can also be suppressed and high quality diamond film of FWHM = 10.19 cm-1 was obtained. With nitrogen addition above 2000 ppm, diamond film was partly doped and some sp2 structures appeared. These homoepitaxial diamond films were characterized by optical microscopy and micro-Raman spectroscopy.

High quality homoepitaxial diamond thin film synthesis with high growth rate by a two-step growth method

1999 ◽  
Vol 8 (6) ◽  
pp. 1046-1049 ◽  
Author(s):  
D. Takeuchi ◽  
S. Yamanaka ◽  
H. Watanabe ◽  
S. Sawada ◽  
H. Ichinose ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Diamond Thin Film ◽  
Growth Method ◽  
Step Growth ◽  
Film Synthesis
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