An on-wafer test structure to measure the effect of thermally-induced stress on silicon devices

1997 ◽  
Vol 37 (10-11) ◽  
pp. 1441-1444 ◽  
Author(s):  
Y. Haddab ◽  
D. Manic ◽  
R.S. Popovic
Keyword(s):  
Test Structure ◽  
Thermally Induced ◽  
Silicon Devices ◽  
Induced Stress ◽  
Wafer Test

Characterization of Thermally Induced Stress in IC Packages Using PiFETs Over a Temperature Range of −180°C to 80°C

2014 ◽  
Vol 2014 (1) ◽  
pp. 000500-000504 ◽  
Author(s):  
Francy J. Akkara ◽  
Uday S. Goteti ◽  
Richard C. Jaeger ◽  
Michael C. Hamilton ◽  
Michael J. Palmer ◽  
...  
Keyword(s):  
Shear Stress ◽  
Stress Component ◽  
Shear Stress Component ◽  
Thermally Induced ◽  
Temperature Changes ◽  
Temperature Range ◽  
Induced Stress ◽  
Highly Sensitive ◽  
Stress Components

In certain applications, IC packages may be exposed to extreme temperatures and knowledge of thermally induced stress aids the prediction of performance degradation or failure of the IC. In the devices that are used in extreme conditions, the stress is caused mainly by the mismatch in expansion of various materials triggered by the different coefficients of thermal expansion. This work performed in this study is conducted using NMOS current mirror circuits that are cycled through a wide temperature range of −180°C to 80°C. These circuits are highly sensitive to stress and provide well-localized measurements of shear stress. The sensors are fabricated in such a way that the effects of certain stress components are isolated. These sensors are also temperature compensated so that only the effect of mechanical stress components is observed and changes in device performance due to temperature changes are minimal. Current readings obtained from the sensors are used to extract the shear stress component. Finite element simulations, using expected materials performance parameter information were also performed for similar packages and these results are compared to the measured results.

scholarly journals Towards improving the physical basis for ice-dynamics models

1997 ◽  
Vol 25 ◽  
pp. 177-182 ◽  
Author(s):  
J. A. Richter-Menge
Keyword(s):  
High Frequency ◽  
Low Frequency ◽  
The Arctic ◽  
Frequency Content ◽  
Ice Dynamics ◽  
Relative Significance ◽  
Thermally Induced ◽  
Induced Stress ◽  
Dynamics Models

In situ measurements of ice stress were made on a multi-year floe in the Alaskan Beaufort Sea over a 6 month period, beginning in October 1993. The data suggest that, in this region of the Arctic during this experiment, there were two main sources of stress: a thermally induced stress caused by changes in air temperature, and a stress generated by ice motion. Due to the natural damping of the snow and ice above the sensor, the thermally-induced stresses are low frequency (order of days). Stresses associated with periods of ice motion have both a high-frequency (order of hours), and low-frequency, content. The relative significance of these sources of stress is seasonal, reflecting the changes in the strength and continuity of the pack.

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