ESD protection techniques for high frequency integrated circuits

1998 ◽  
Vol 38 (11) ◽  
pp. 1681-1689 ◽  
Author(s):  
G. Croft ◽  
J. Bernier
2016 ◽  
Vol 26 (02) ◽  
pp. 1750023
Author(s):  
Minoh Son ◽  
Changkun Park

In this study, we propose cell-based diodes which are laid out with a zigzag shape as electrostatic discharge (ESD) protection elements to enhance the ESD survival level of the diodes. Generally, diodes are regarded as simple ESD protection devices in integrated circuits. During ESD events, the P–N junction of the ESD diode acts as a thermal source. In this study, we investigate a distributed layout method which relies on a cell-based ESD diode to prevent an excessive increase in the temperature at the P–N junction. However, although the distributed layout enhances the ESD survival levels of the ESD diode, the required area increases compared that of a typical layout. Thus, we propose a zigzag layout technique for the cell-based diode to reduce the area and obtain a high ESD survival level. To verify the feasibility of the zigzag layout techniques for cell-based diodes, we designed ESD diodes using 110[Formula: see text]nm RF CMOS technology. The experimental results successfully demonstrate the feasibility of the proposed method.


2018 ◽  
Vol 2018 (1) ◽  
pp. 000384-000388
Author(s):  
Brian Curran ◽  
Jacob Reyes ◽  
Christian Tschoban ◽  
Ivan Ndip ◽  
Klaus-Dieter Lang ◽  
...  

Abstract Increasing demand for high bandwidth wireless satellite connections and telecommunications has resulted in interest in steerable antenna arrays in the GHz frequency range. These applications require cost-effective integration technologies for high frequency and high power integrated circuits (ICs) using GaAs, for example. In this paper, an integration platform is proposed, that enables GaAs ICs to be directly placed on a copper core inside cavities of a high frequency laminate for optimal cooling purposes. The platform is used to integrate a K-Band receiver front-end, composed of four GaAs ICs, with linear IF output power for input powers above −40dBm and a temperature of 42°C during operation.


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