Copper indium disulfide solar cell absorbers prepared in a one-step process by reactive magnetron sputtering from copper and indium targets

2002 ◽  
Vol 413 (1-2) ◽  
pp. 92-97 ◽  
Author(s):  
K Ellmer ◽  
J Hinze ◽  
J Klaer
Keyword(s):  
Solar Cell ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Step Process ◽  
Copper Indium Disulfide ◽  
Copper Indium ◽  
One Step

Optical, Structural and Electronic Properties of CuInS2 Solar Cells Deposited by Reactive Magnetron Sputtering

2005 ◽  
Vol 865 ◽  
Author(s):  
T. Unold ◽  
T. Enzenhofer ◽  
K. Ellmer
Keyword(s):  
Solar Cell ◽  
Magnetron Sputtering ◽  
Defect Structure ◽  
Growth Parameters ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Sequential Process ◽  
Current Voltage ◽  
Structural And Electronic Properties ◽  
One Step

AbstractCuInS2 thin films have been prepared by reactive magnetron sputtering from metallic targets in an Ar/H2S atmosphere. The Cu/In ratio and substrate temperature have been varied and absorber layers were processed to solar cell devices using the HMI baseline process. Device efficiencies up to 8.8 % have been achieved. The electronic and optical properties of the solar cell devices were analyzed by Scanning Electron Microscopy, Raman, photoluminescence, current-voltage and quantum efficiency measurements. Raman measurements indicate that Cu-Au defect ordering is present in some of the films, which can be eliminated by appropriate choice of the growth parameters. Photoluminescence measurements show spectra very similar to the spectra found for cells from the two-step sequential process indicating a similar defect structure in these films. No principle obstacles to establishing a one-step reactive magnetron sputtering process for CuInS2 solar cell absorbers have been identified.

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