Electrical properties of aluminum oxide ceramics film on a metal

2021 ◽  
Vol 2 ◽  
pp. 59-65
Author(s):  
I. Yu. Bakeev ◽  
◽  
Yu. A. Burachevsky ◽  
E. S. Dvilis ◽  
D. B. Zolotukhin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Aluminum Oxide ◽  
Relative Dielectric Constant ◽  
Plasma Electron ◽  
Electron Beam Evaporation ◽  
Original Method ◽  
Alumina Powder ◽  
Oxide Ceramic ◽  
Temperature Dependences

The work is devoted to the study of electrical properties (temperature dependences of conductivity, relative dielectric constant, dielectric loss tangent for various frequencies) of an aluminum oxide ceramic film deposited on a metal substrate. The film was created by the original method of electron beam evaporation of a non-conductive target, consisting of a compressed alumina powder, using a plasma electron source, which is able to reliably operate in the fore-vacuum pressure range (5 – 100 Pa). Such increased working gas pressures ensures the generation of a dense beam plasma near the target, which neutralizes the charging of a non-conducting target and thereby provides its effective melting and electron beam evaporation.

Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

1995 ◽  
Vol 10 (1) ◽  
pp. 26-33 ◽  
Author(s):  
L.M. Porter ◽  
R.F. Davis ◽  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Electron Beam Evaporation ◽  
Leakage Currents ◽  
X Ray ◽  
Transmission Electron

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

Structural, optical, and electrical properties of tin sulfide thin films grown with electron-beam evaporation

2015 ◽  
Vol 15 (9) ◽  
pp. 964-969 ◽  
Author(s):  
Hui Kyung Park ◽  
Jaeseung Jo ◽  
Hee Kyeung Hong ◽  
Gwang Yeom Song ◽  
Jaeyeong Heo
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Properties ◽  
Electron Beam Evaporation ◽  
Tin Sulfide ◽  
Optical And Electrical Properties

Optical and electrical properties of TiOx thin films deposited by electron beam evaporation

Vacuum ◽  
2007 ◽  
Vol 81 (9) ◽  
pp. 1023-1028 ◽  
Author(s):  
Jianke Yao ◽  
Jianda Shao ◽  
Hongbo He ◽  
Zhengxiu Fan
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Properties ◽  
Electron Beam Evaporation ◽  
Optical And Electrical Properties

scholarly journals Electron-Beam Synthesis of Dielectric Coatings Using Forevacuum Plasma Electron Sources (Review)

Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Yury G. Yushkov ◽  
Efim M. Oks ◽  
Andrey V. Tyunkov ◽  
Denis B. Zolotukhin
Keyword(s):  
Electron Beam ◽  
Direct Action ◽  
Elevated Pressure ◽  
Plasma Electron ◽  
Electron Beam Evaporation ◽  
Electron Sources ◽  
Dielectric Coatings ◽  
Ion Plasma ◽  
Methods Of Synthesis ◽  
Electron Beam Heating

This is a review of current developments in the field of ion-plasma and beam methods of synthesis of protective and functional dielectric coatings. We give rationales for attractiveness and prospects of creating such coatings by electron-beam heating and following evaporation of dielectric targets. Forevacuum plasma electron sources, operating at elevated pressure values from units to hundreds of pascals, make it possible to exert the direct action of an electron beam on low-conductive materials. Electron-beam evaporation of aluminum oxide, boron, and silicon carbide targets is used to exemplify the particular features of electron-beam synthesis of such coatings and their parameters and characteristics.

The Electrical Properties of Thin Films of TiNx and TiCx

1975 ◽  
Vol 30 (12) ◽  
pp. 1661-1666 ◽  
Author(s):  
P. J. P. De Maayer ◽  
J. D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electron Transfer ◽  
Electron Beam ◽  
Electrical Properties ◽  
Transport Properties ◽  
Electron Concentration ◽  
Defect Structure ◽  
Electron Beam Evaporation ◽  
Transfer Theory ◽  
Electron Transfer Theory

Abstract Thin films of metallically conductive titanium mononitride and carbide were prepared by means of electron beam evaporation. The composition of the samples could be changed over appreciable ranges by introducing nitrogen in the system or adding carbon to the pure starting material, respectively. The transport properties of the resulting compounds were studied as a function of nonstoichiometry and defect structure. A plausible explanation for the different behavior of the films compared to corresponding bulk samples is given and a correlation between the change in electron concentration and the electron transfer theory is presented.

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