Surface deformation of the InGaN thin films deposited on a sapphire substrate

1997 ◽  
Vol 295 (1-2) ◽  
pp. 193-198 ◽  
Author(s):  
R. Nowak ◽  
T. Soga ◽  
M. Umeno
Keyword(s):  
Thin Films ◽  
Sapphire Substrate ◽  
Surface Deformation

Integration of epitaxial La2/3Sr1/3MnO3 thin films on silicon-on-sapphire substrate for MEMS applications

2021 ◽  
pp. 152095
Author(s):  
Sandeep Kumar Chaluvadi ◽  
Zhe Wang ◽  
Laryssa M. Carvalho de Araujo ◽  
Pasquale Orgiani ◽  
Vincent Polewczyk ◽  
...  
Keyword(s):  
Thin Films ◽  
Sapphire Substrate

Characterization of AlN Thin Films Grown by Pulsed Laser Deposition on Sapphire Substrate

2013 ◽  
Vol 50 (6) ◽  
pp. 551-556
Author(s):  
Eun-Hee Jeong ◽  
Jun-Ki Chung ◽  
Rae-Young Jung ◽  
Sung-Jin Kim ◽  
Sang-Yeup Park
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sapphire Substrate ◽  
Pulsed Laser ◽  
Laser Deposition

Metalorganic Molecular Beam Epitaxy of GaN Thin Films on a Sapphire Substrate

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6170-6173 ◽  
Author(s):  
Min-Ho Kim ◽  
Sung-Nam Lee ◽  
Nae-Man Park ◽  
Seong-Ju Park
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Deformation behavior during nanoindentation of epitaxial ZnO thin films on sapphire substrate

2007 ◽  
Vol 61 (11-12) ◽  
pp. 2443-2445 ◽  
Author(s):  
R. Navamathavan ◽  
Kyoung-Kook Kim ◽  
Dae-Kue Hwang ◽  
Seong-Ju Park ◽  
Tae Geol Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sapphire Substrate ◽  
Deformation Behavior ◽  
Zno Thin Films

Surface Deformation of Cadmium Selenide Thin Films By DEHI Technique

2020 ◽  
Vol 23 ◽  
pp. 276-283
Author(s):  
S.A. Gangawane ◽  
V.P. Malekar ◽  
V.J. Fulari
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Surface Deformation

Preparation of AlN thin films by means of CVD using iodide source under atmospheric pressure

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroki Iwane ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Sapphire Substrate ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Aluminum Iodide

AbstractEpitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.

Epitaxial growth of superconducting YBa2Cu3O7 thin films on bare R-plane sapphire substrate

1994 ◽  
Vol 235-240 ◽  
pp. 665-666 ◽  
Author(s):  
C. Thivet ◽  
M. Guilloux-Viry ◽  
J. Padiou ◽  
A. Perrin ◽  
G. Dousselin ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Sapphire Substrate
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