Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition: application to preparation of Er-doped hydrogenated amorphous Si films

Vacuum ◽  
2000 ◽  
Vol 59 (2-3) ◽  
pp. 635-640
Author(s):  
Atsushi Masuda ◽  
Joe Sakai ◽  
Hideki Matsumura
Keyword(s):  
Vapor Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Pulsed Laser Ablation ◽  
Thin Film Fabrication ◽  
Film Fabrication ◽  
Amorphous Si ◽  
Si Films ◽  
Er Doped ◽  
Hydrogenated Amorphous

Effect of Nano-Structures on the Optical Features of Hydrogenated Amorphous Si Films

2006 ◽  
Vol 510-511 ◽  
pp. 954-957
Author(s):  
Myung Beom Park ◽  
Jae Hyun Shim ◽  
Nam Hee Cho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Nano Structure ◽  
Nano Structures ◽  
Light Region ◽  
Amorphous Si ◽  
Si Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous Si (a-Si:H) films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques, and the effect of nano-structure on the photoluminescence (PL) phenomena of the films was investigated. The films, which were prepared at R.T., contain both amorphous and crystalline phases of 1 ~ 3 nm size nano-crystallites with {100} orientation preference while the films prepared at 500°C are composed of about 6 nm and 150 nm size crystallites. The former exhibit a strong PL intensity near blue light region, while the latter exhibiting little PL phenomena; also, the optical band gap of the former was calculated at 4.2 eV.

Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition

2010 ◽  
Vol 107 (4) ◽  
pp. 043503 ◽  
Author(s):  
I. Crupi ◽  
S. Mirabella ◽  
D. D’Angelo ◽  
S. Gibilisco ◽  
A. Grasso ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Hall Effect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Uniform, High Performance Poly-Si TFTs Fabricated by Laser- Crystallization of PECVD-Grown a-SI:H

2000 ◽  
Vol 621 ◽  
Author(s):  
D. Toet ◽  
T.W. Sigmon ◽  
T. Takehara ◽  
C.C. Tsai ◽  
W.R. Harshbarger
Keyword(s):  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Chemical Vapor ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Partial Melt ◽  
Amorphous Si ◽  
Average Size ◽  
Si Films

ABSTRACTPolycrystalline silicon thin film transistors (TFTs) were fabricated using laser crystallization of thin amorphous Si films grown by plasma-enhanced chemical vapor deposition. The films were exposed to a scanned XeCl excimer laser beam at 350 mJ/cm2. At this fluence the Si film com- pletely melted and crystallized in the form of uniformly distributed grains with an average size of 39 nm. One of the films was then subjected to a low fluence laser scan (250 mJ/cm2), which re- sulted in the melting of the top part of the film and lead to an increase in grain size. The TFTs fabricated without the partial melt method had good electrical properties and uniformities. The partial melt method lead to substantial improvements in most device characteristics, while the uniformity remained good.

RuO2 thin film fabrication with plasma-enhanced chemical vapor deposition

1999 ◽  
Vol 341 (1-2) ◽  
pp. 52-54 ◽  
Author(s):  
Sung-Eon Park ◽  
Hyun-Mi Kim ◽  
Ki-Bum Kim ◽  
Seok-Hong Min
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Fabrication ◽  
Film Fabrication

New Results on the Microstructure of Amorphous Silicon as Observed by Internal Friction

1997 ◽  
Vol 467 ◽  
Author(s):  
R. S. Crandall ◽  
A. H. Mahan ◽  
E. Iwaniczko ◽  
K. M. Jones ◽  
X. Liu ◽  
...  
Keyword(s):  
Internal Friction ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Solid ◽  
Amorphous Solids ◽  
Electron Beam Evaporation ◽  
Hot Wire ◽  
Si Films ◽  
Hydrogenated Amorphous

ABSTRACTWe have measured the low temperature internal friction (Q−1) of amorphous silicon (a-Si) films. Electron-beam evaporation leads to the well-known temperature-independent plateau common to all amorphous solids. For hydrogenated amorphous silicon (a-Si:H) with about 1 at.% H produced by hot wire chemical vapor deposition, however, the value of is over two hundred times smaller than for e-beam a-Si. This is the first observation of an amorphous solid without any significant low energy excitations. This finding offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature.

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