Dust particle formation in low pressure Ar/CH4 and Ar/C2H2 discharges used for thin film deposition

Vacuum ◽  
2003 ◽  
Vol 71 (3) ◽  
pp. 377-390 ◽  
Author(s):  
J Berndt ◽  
S Hong ◽  
E Kovačević ◽  
I Stefanović ◽  
J Winter
1995 ◽  
Vol 389 ◽  
Author(s):  
C. C. Fang ◽  
V. Prasad

ABSTRACTTitanium (Ti) is widely used to improve the contact resistance with the underlying substrate in contact or via filling applications. As the critical dimensions of the electronic devices fall below 0.5 micron and the aspect ratio of the contact holes increases, it becomes more difficult to obtain a good coverage at the bottom of the contact. In our continuing effort to develop a better technology for the metallization of sub-micron liners [1, 2] using the sputtering process, we have constructed a feature scale model and have initiated an extensive study on the coverage of the contact liners. Our objective is to search for an alternative process technique to replace the current, widely-used collimated sputtering with the help of a realistic model that accounts for all important deposition phenomena such as the effect of the working pressure and the ion bombardment. Since the mean free path of the deposited atoms, particularly in a low pressure system, is comparable to the surface feature of the substrate, particle methods are more appropriate for the modeling of thin film formation phenomena and predictions of microstructures than the continuum approach. This is specially true in the case of sputter-deposition. In this paper, a simple two dimensional molecular dynamics model is used to predict the growth of the thin film. It allows us to study the effects of the physical parameters such as working pressure and ion energy as well as the influence of the geometric configuration, e.g., distance between the target and the substrate and the size of the contact hole. Simulations for long-throw/low-pressure sputtering and ionized magnetron sputtering are presented together with the experimental results for collimated sputtering.


Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.


2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-553-Pr3-560 ◽  
Author(s):  
W. Zhuang ◽  
L. J. Charneski ◽  
D. R. Evans ◽  
S. T. Hsu ◽  
Z. Tang ◽  
...  

Author(s):  
Stephen R. Forrest

Organic electronics is a platform for very low cost and high performance optoelectronic and electronic devices that cover large areas, are lightweight, and can be both flexible and conformable to irregularly shaped surfaces such as foldable smart phones. Organics are at the core of the global organic light emitting device (OLED) display industry, and also having use in efficient lighting sources, solar cells, and thin film transistors useful in medical and a range of other sensing, memory and logic applications. This book introduces the theoretical foundations and practical realization of devices in organic electronics. It is a product of both one and two semester courses that have been taught over a period of more than two decades. The target audiences are students at all levels of graduate studies, highly motivated senior undergraduates, and practicing engineers and scientists. The book is divided into two sections. Part I, Foundations, lays down the fundamental principles of the field of organic electronics. It is assumed that the reader has an elementary knowledge of quantum mechanics, and electricity and magnetism. Background knowledge of organic chemistry is not required. Part II, Applications, focuses on organic electronic devices. It begins with a discussion of organic thin film deposition and patterning, followed by chapters on organic light emitters, detectors, and thin film transistors. The last chapter describes several devices and phenomena that are not covered in the previous chapters, since they lie outside of the current mainstream of the field, but are nevertheless important.


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