Local atomic structure and electrical properties of nitrided SiSiO2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations

1996 ◽  
Vol 104-105 ◽  
pp. 335-341 ◽  
Author(s):  
G. Lucovsky ◽  
D.R. Lee ◽  
S.V. Hattangady ◽  
H. Niimi ◽  
S. Gandhi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Quantum Chemistry ◽  
Ab Initio ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Structure ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Quantum Chemistry Calculations

Cathodoluminescence Studies of Si-Sio2 Interfaces Prepared by Plasma-Assisted Oxidation and Subjected to Post-Oxidation Rapid Thermal Annealing

1998 ◽  
Vol 525 ◽  
Author(s):  
J. Schafer ◽  
A. P. Young ◽  
L. J. Brillson ◽  
H. Niimi ◽  
G. Lucovsky
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Oxygen Vacancies ◽  
Plasma Deposition ◽  
Film Surface ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Si Substrates ◽  
Local Bonding ◽  
Processing Steps

ABSTRACTWe have used low energy cathodolumrdinescence spectroscopy (CLS) to characterize defects at ultrathin (50 Å) silicon dioxide films, prepared on Si substrates by low-temperature plasma deposition. Variable-depth excitation with different electron injection energies provided a clear distinction between deep levels localized within the films versus at their interfaces. Defect bands are evident at 0.8 eV and 1.9 eV, characteristic of an amorphous, silicon-rich local bonding environment. Closer to the film surface, CLS reveals a defect at 2.7 eV indicative of oxygen vacancies in stoichiometric SiO2. The effect of hydrogenation at 400°C, rapid thermal annealing at 900°C, and especially the combination of both processing steps is shown to reduce the density of these defects dramatically.

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