Role of room-temperature electrochemical oxidation in Pb-doped Bi–Sr–Ca–CuO superconducting thin films

2000 ◽  
Vol 65 (1) ◽  
pp. 68-73 ◽  
Author(s):  
N.V Desai ◽  
D.D Shivagan ◽  
L.A Ekal ◽  
S.H Pawar
Keyword(s):  
Thin Films ◽  
Electrochemical Oxidation ◽  
Room Temperature ◽  
Superconducting Thin Films

Role of internal stress on room-temperature permittivity of BaTiO3 ceramics and thin films

2004 ◽  
Vol 95 (1) ◽  
pp. 219-225 ◽  
Author(s):  
Jung-Kun Lee ◽  
Young Hyun Lee ◽  
Kug Sun Hong ◽  
Jin-Wook Jang
Keyword(s):  
Thin Films ◽  
Internal Stress ◽  
Room Temperature

Preparation and Characterization of (Ba1-xSrx)TiO3 Thin Films for Infrared Detection by Pulsed Iaserdeposion Method

1998 ◽  
Vol 526 ◽  
Author(s):  
R. Kubo ◽  
H. Xu ◽  
Y. Yoshino ◽  
M. Okuyama
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Infrared Detection ◽  
Sharp Change ◽  
Dielectric Peak ◽  
Peak Point ◽  
Active Oxygen Radicals ◽  
Pyroelectric Material

AbstractBa1-xSrxTiO3 thin films have been deposited on Pt/Ti/SiO2/Si substra by the pulsed ArF laser deposition method. Deposition conditions, such as ambient gas and substrt temperatze, have been optmized to rrxove crystallinepropesty. Fe oelectric p e phasehasbeenobtainod ithe BSTthin filns deposited above 500°C in Q2 gas havingpressure ofabout 13Pa. Using N2O gas instead of O2 gas improved the crystallinity, because highly chemical active oxygen radicals produced due to ultraviolet inadiation of the laser. Doping of Bi ranging around 2% fills of the role of decrease leakage current of BST thin films. Temperature dependence of the dielectric constant (εr) shows a sharp change, peaking aroumd room temperature. The peak point exists below 25°C in the ratio of Ba/Sr=1.1 film, and shills above 50°C in Ba/Sr=5.7 film. When the Ba/Sr ratio is 1.4 the dielectric peak exists near 27°C and is very sharp. The maxinium differentW rate of dielectric constanttversus temperature is the largest in Ba/Sr=1.4 film and is about 100K-1. This value is equivalent to apyroelectric coefficient of 1.8 × 10-7 C/cm2K, which is almost the same as that of LiTaO3 single crystl, a typical pyroelectric material.

Conditions giving rise to intense visible room temperature photoluminescence in SrWO4 thin films: the role of disorder

2005 ◽  
Vol 312 (1-3) ◽  
pp. 1-9 ◽  
Author(s):  
E. Orhan ◽  
M. Anicete-Santos ◽  
M.A.M.A. Maurera ◽  
F.M. Pontes ◽  
C.O. Paiva-Santos ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Photoluminescence

Role of multivalent Cu, oxygen vacancies and CuO nanophase in the ferromagnetic properties of ZnO:Cu thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (69) ◽  
pp. 55648-55657 ◽  
Author(s):  
M. Younas ◽  
Junying Shen ◽  
Mingquan He ◽  
R. Lortz ◽  
Fahad Azad ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Room Temperature Ferromagnetism ◽  
Simultaneous Presence ◽  
Ferromagnetic Properties

Room temperature ferromagnetism (FM) of these thin film samples are highly tuneable by the simultaneous presence of CuO nanophases and multivalent Cu and Vö concentrations.

scholarly journals The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Ala J. Al-Douri ◽  
F. Y. Al-Shakily ◽  
Abdalla A. Alnajjar ◽  
Maysoon F. A. Alias
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Dopant Concentration ◽  
Glass Substrates ◽  
Order Of Magnitude ◽  
Cdte Thin Films ◽  
P Type ◽  
Substrate Temperatures

Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5) were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT& 423 K). The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdTe thin films asTsincreases and by 1-2 orders of magnitude with increasing dopant percentage of Al and Sb. In general, films doped with Sb are more efficient than Al-doped films. The activation energy (Ea2) decreases with increasingTsand dopant percentage for both Al and Sb. Undoped CdTe films deposited at RT are p-type convert to n-type with increasingTsand upon doping with Al at more than 0.5%. The carrier concentration decreases asTsincreases while it increases with increasing dopant percentage. Hall mobility decreases more than three times as Al increases whereas it increases about one order of magnitude with increasing Sb percentage in CdTe thin films deposited at 423 K and RT, respectively.

Flux trapping and paramagnetic effects in superconducting thin films: The role of de Gennes boundary conditions

2008 ◽  
Vol 468 (7-10) ◽  
pp. 718-721 ◽  
Author(s):  
José J. Barba ◽  
Clécio C. de Souza Silva ◽  
Leonardo R.E. Cabral ◽  
J. Albino Aguiar
Keyword(s):  
Thin Films ◽  
Boundary Conditions ◽  
Superconducting Thin Films ◽  
Flux Trapping
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