scholarly journals Study of Phonon Transport Across Si/Ge Interfaces Using Full-Band Phonon Monte Carlo Simulation

2021 ◽  
Author(s):  
Ngoc Duc Le ◽  
Brice Davier ◽  
Philippe Dollfus ◽  
Jerome Saint Martin
Keyword(s):  
Thermal Conductivity ◽  
Heat Flux ◽  
Monte Carlo ◽  
Boltzmann Transport Equation ◽  
Phonon Transport ◽  
Nanometer Scale ◽  
Boltzmann Transport ◽  
Ballistic Regime ◽  
Full Band ◽  
Micrometer Scale

Abstract A Full Band Monte Carlo simulatorhas been developed to considerphonon transmission across interfaces disposedperpendicularlyto the heat flux. This solver of the Boltzmann transport equation does not require any assumption on the shape the phonon distribution and can naturally consider all phonon transport regimes from the diffusive to the fully ballistic regime. This simulatoris used to study single and double Si/Ge heterostructures from the micrometer scale downto the nanometer scale,i.e. in all phonon transport regime from fully diffusive toballistic.A methodology to determine the thermal conductivity atthermal interfaces is presented.

Monte Carlo Modeling of Phonon Transport Using Scattering Phase Functions

2008 ◽  
Author(s):  
Neil Zuckerman ◽  
Jennifer R. Lukes
Keyword(s):  
Thermal Conductivity ◽  
Monte Carlo ◽  
Numerical Methods ◽  
Ballistic Transport ◽  
Simulation Method ◽  
Phonon Transport ◽  
Nanometer Scale ◽  
Boltzmann Transport ◽  
Length Scales ◽  
Scale Structures

The calculation of heat transport in nonmetallic materials at small length scales is important in the design of thermoelectric and electronic materials. New designs with quantum dot superlattices (QDS) and other nanometer-scale structures can change the thermal conductivity in ways that are difficult to model and predict. The Boltzmann Transport Equation can describe the propagation of energy via mechanical vibrations in an analytical fashion but remains difficult to solve for the problems of interest. Numerical methods for simulation of propagation and scattering of high frequency vibrational quanta (phonons) in nanometer-scale structures have been developed but are either impractical at micron length scales, or cannot truly capture the details of interactions with nanometer-scale inclusions. Monte Carlo (MC) models of phonon transport have been developed and demonstrated based on similar numerical methods used for description of electron transport [1-4]. This simulation method allows computation of thermal conductivity in materials with length scales LX in the range of 10 nm to 10 μm. At low temperatures the model approaches a ballistic transport simulation and may function for even larger length scales.

Thermal Conductivity of Silicon Thin Films Predicted by Molecular Dynamics Simulations and Theoretical Calculation

2011 ◽  
Vol 55-57 ◽  
pp. 1152-1155 ◽  
Author(s):  
Xing Li Zhang ◽  
Zhao Wei Sun
Keyword(s):  
Thermal Conductivity ◽  
Molecular Dynamics ◽  
Boltzmann Transport Equation ◽  
Phonon Transport ◽  
Dynamics Simulation ◽  
Boltzmann Transport ◽  
Silicon Thin Films ◽  
Simulation Results ◽  
Dynamics Simulations ◽  
Good Agreement

Molecular, dynamics simulation and the Boltzmann transport equation are used respectively to analyze the phonon transport in Si thin film. The MD result is in good agreement with the theoretical analysis values. The results show that the calculated thermal conductivity decreases almost linearly as the film thickness reduced and is almost independent of the temperature at the nanoscale. It was observed from the simulation results that there exists the obvious size effect on the thermal conductivity.

Monte Carlo Simulation of the Thermal Conductivity and Phonon Transport in Nanocomposites

2005 ◽  
Author(s):  
Ming-Shan Jeng ◽  
Ronggui Yang ◽  
David Song ◽  
Gang Chen
Keyword(s):  
Thermal Conductivity ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Silicon Germanium ◽  
High Efficiency ◽  
Three Dimensional ◽  
Simulation Method ◽  
Phonon Transport ◽  
Boltzmann Transport ◽  
Nanoparticle Composites

This paper presents a Monte Carlo simulation scheme to study the phonon transport and thermal conductivity of nanocomposites. Special attention has been paid to the implementation of periodic boundary condition in Monte Carlo simulation. The scheme is applied to study the thermal conductivity of silicon germanium (Si-Ge) nanocomposites, which are of great interest for high efficiency thermoelectric material development. The Monte Carlo simulation was first validated by successfully reproducing the results of (two dimensional) nanowire composites using the deterministic solution of the phonon Boltzmann transport equation and the experimental thermal conductivity of bulk germanium, and then the validated simulation method was used to study (three dimensional) nanoparticle composites, where Si nanoparticles are embedded in Ge host. The size effects of phonon transport in nanoparticle composites were studied and the results show that the thermal conductivity of nanoparticle composites can be lower than alloy value. It was found that randomly distributed nanopaticles in nanocomposites rendered the thermal conductivity values close to that of periodic aligned patterns.

A Generalized Enhanced Fourier Law

2016 ◽  
Vol 139 (3) ◽  
Author(s):  
Ashok T. Ramu ◽  
John E. Bowers
Keyword(s):  
Heat Flux ◽  
Transport Equation ◽  
Phonon Mode ◽  
Boltzmann Transport Equation ◽  
Phonon Transport ◽  
Boltzmann Transport ◽  
Fourier Law ◽  
Transport Effects

A generalized enhanced Fourier law (EFL) that accounts for quasi-ballistic phonon transport effects in a formulation entirely in terms of physical observables is derived from the Boltzmann transport equation. It generalizes the previously reported EFL from a gray phonon population to an arbitrary quasi-ballistic phonon mode population, the chief advantage being its formulation in terms of observables like the heat flux and temperature, in a manner akin to the Fourier law albeit rigorous enough to describe quasi-ballistic phonon transport.

Ballistic-Diffusive Approximation for Phonon Transport Accounting for Polarization and Dispersion

2003 ◽  
Author(s):  
J. Y. Murthy ◽  
S. R. Mathur
Keyword(s):  
Thermal Conductivity ◽  
Diffusion Approximation ◽  
Phonon Dispersion ◽  
Boltzmann Transport Equation ◽  
Phonon Transport ◽  
Boltzmann Transport ◽  
Conductivity Measurements ◽  
Bulk Silicon ◽  
Medium Component ◽  
Diffusive Approximation

A ballistic-diffusive approximation to the Boltzmann transport equation is developed for describing phonon transport in semi-conductors and dielectrics. The model incorporates the effects of phonon dispersion and polarization by considering longitudinal, transverse and optical branches. Each branch is divided into frequency bands, and scattering between branches and bands is incorporated subject to conservation rules. The phonon energy in each band is divided into a boundary and a medium component, with the latter being computed using a diffusion approximation. The approximation is shown to work well by comparing its predictions to exact solutions as well thermal conductivity measurements for bulk silicon.

Study of an Iterative Solution for Boltzmann Transport Equation and Calculation of Thermal Conductivity

2018 ◽  
Vol 777 ◽  
pp. 421-425 ◽  
Author(s):  
Chhengrot Sion ◽  
Chung Hao Hsu
Keyword(s):  
Heat Transfer ◽  
Thermal Conductivity ◽  
Numerical Calculation ◽  
Iterative Method ◽  
Transport Equation ◽  
Linear Systems ◽  
Heat Transport ◽  
Boltzmann Transport Equation ◽  
Iterative Solution ◽  
Boltzmann Transport

Many methods have been developed to predict the thermal conductivity of the material. Heat transport is complex and it contains many unknown variables, which makes the thermal conductivity hard to define. The iterative solution of Boltzmann transport equation (BTE) can make the numerical calculation and the nanoscale study of heat transfer possible. Here, we review how to apply the iterative method to solve BTE and many linear systems. This method can compute a sequence of progressively accurate iteration to approximate the solution of BTE.

A High Thermoelectric Performance ZT in p-Type LaSe2 Crystal

2021 ◽  
Vol 871 ◽  
pp. 203-207
Author(s):  
Jian Liu
Keyword(s):  
Thermal Conductivity ◽  
Power Factor ◽  
High Power ◽  
Density Functional ◽  
Lattice Thermal Conductivity ◽  
Phonon Transport ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
High Power Factor ◽  
P Type

In this work, we use first principles DFT calculations, anharmonic phonon scatter theory and Boltzmann transport method, to predict a comprehensive study on the thermoelectric properties as electronic and phonon transport of layered LaSe2 crystal. The flat-and-dispersive type band structure of LaSe2 crystal offers a high power factor. In the other hand, low lattice thermal conductivity is revealed in LaSe2 semiconductor, combined with its high power factor, the LaSe2 crystal is considered a promising thermoelectric material. It is demonstrated that p-type LaSe2 could be optimized to exhibit outstanding thermoelectric performance with a maximum ZT value of 1.41 at 1100K. Explored by density functional theory calculations, the high ZT value is due to its high Seebeck coefficient S, high electrical conductivity, and low lattice thermal conductivity .

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